半導體為世上重大發明且與現代生活密不可分，隨著世代的進化變遷，不斷的追求微細化及線路層層堆疊而對於晶片的考驗也越來越嚴苛，全域平坦化表面將成為相當重要得關鍵技術。化學機械拋光/平坦化(Chemical Mechanical Polishing/Planarization, CMP)為目前各大半導體廠慣用的標準平坦化製程，半導體製程中為確保製程良率，須利用鑽石修整器維持拋光墊之工作特性及能力。鑽石修整器為多顆鑽石所組成，本研究從最基本現象開始探討，探討單顆鑽石於乾式修整後之拋光墊表面基本形貌與特性及移除機制，以近似正交切削模式(Pseudo-orthogonal machining, POM)建立鑽石對於軟韌材料拋光墊之彈塑性變形之犁削與切削模型，再利用最低磨耗拋光墊同時不失恢復拋光墊能力之參數進行探討，搭配不同種下壓力、拋光盤轉速及各種傾角之單顆鑽石對於拋光墊表面形貌影響。實驗為探討單顆鑽石角度對於聚胺酯(Polyurethane)拋光墊之彈塑性變形機制影響，結果顯示金字塔形角度60°、90°、120°之鑽石壓入實心與具孔隙拋光墊時將有90%因拋光墊彈性變形而能量損失，於修整製程實驗，鑽石以面及刃兩種方向進行修整會產生兩種不同的犁削機制，使拋光墊兩側隆起材料而造成拋光墊殘留於表面，以三維犁削比(3D Plowing ratio)進行比較以鑽石角度為90°較易於對實心與具孔隙拋光墊進行表面形貌移除，故較適合用於CMP製程中的鑽石修整器。

As patterns have become more challenging, higher wafer surface quality is crucial. Chemical Mechanical Polishing/ Planarization, CMP has been a popular process for semiconductor fabrication. In CMP process, a diamond dresser is usually applied to condition pad surface topography and maintain pad capability. This study aims to investigate fundamental pad dressing process on nonporous and porous pads with plastic-elastic change under different angles of single diamond grits. It can be considered as a pseudo-orthogonal machining (POM) process under force control mode. Experiments apply the lowest dressing time and pressure for pad dressing, along with other different dressing conditions to observe the influence of dressing force change and removal mechanisms. Simulation by ABAQUS software of indention process show that 90% of the energy is lost due to elastic deformation of pad when using pyramid shaped diamond grit on nonporous pad. For experiments of dressing process, pad cutting by tool face or edge of diamond grit can achieve different plowing mechanism and causing deformed material to heave on both sides but not removed from the pad. The 3D plowing ratio has been defined and used to verify the pad removal volume versus the plowing volume. By testing the two plowing mechanisms, experimental results have shown that with a tool angle of 90°, the diamond grit is more capable of material removing on both nonporous and porous pads, which is more suitable for pad dressing in the CMP process based on current setup of this study.

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