本實驗利用氧氣吸附於石墨烯表面造成其內部之載子濃度改變與電阻率變化，來判斷石墨烯半導體之pn特性。實驗中，利用熱化學氣相沉積法製作石墨烯，並通入不同濃度之氨氣進行改質。一般而言，石墨烯在吸附空氣中之氧氣或水氣後，會變成p-type半導體。而在製作石墨烯時通入氨氣進行氮摻雜，會使石墨烯轉變成n-type半導體。在量測中，我們利用氧氣吸附於石墨烯表面會捕捉表面電子之特性，在氧氣吸附於p-type石墨烯中會造成電流上升;而當氧氣吸附於n-type中會造成電流下降。其原因是在氧氣吸附在p-type材料時，材料內部多數載子為電洞，氧氣捕捉表面電子後，會產生更多電洞，因此電流上升。反之，在n-type材料中多數載子為電子，當電子被氧氣捕捉後，造成其電流下降。此外，我們也將石墨烯材料製作成電晶體元件進行量測，當未摻雜之p-type石墨烯其Dirac Point大約落在+85 V，其電洞濃度大於電子濃度;而隨著氮含量上升，其Dirac Point逐漸位移至-30 V，而電子濃度則大於電洞濃度。因此，本實驗除了成功地對於石墨烯進行改質，也證明利用氧氣吸附之特性可以用來辨別其半導體pn之特性。另外，本論文亦將奈米碳管成長於石墨烯上，利用一維的奈米碳管與二維的石墨烯做結合，成功製造出三維的複合材料。其優點為：(1)在接面結構上為碳-碳鍵結，可以有效降低接面阻抗，(2)增加電子在元件中傳輸速度。並將此三維結構材料應用於場電子發射元件與氣體感測。我們以石墨烯取代ITO玻璃做為場電子發射元件之陽極來接收電子，並以石墨烯上成長奈米碳管陣列為場電子發射端，結合為全碳式場電子發射元件，並量測其特性。實驗結果顯示，當外加電場為2.7 V/um時，其場電子發射元件電流密度可達0.1 mA/cm2。另外在螢光量測中，元件呈現出均勻地發光，證明此全碳式場電子發射元件在顯示器應用方面有良好的性質。在本論文，我們亦利用石墨烯之同素異形體的奈米碳片做為電極並應用於電雙層電容器。在此實驗中，藉由奈米碳片的高比表面積與多孔性，提升了電極與電解液之接觸面積。另外，在奈米碳片表面批覆一層鎳薄膜，再利用熱退火與氧電漿處理方式，使鎳薄膜轉變成氧化鎳薄膜。藉由氧化鎳之僞電容特性使奈米碳片/氧化鎳複合電極擁有極佳的比電容值與良好的穩定性。

Abstract
In this thesis, we could precisely confirm the semiconducting type of graphene by the changing of interior carrier concentration and resistivity when O2 gas adsorbed onto graphene surface. Graphene was synthesized onto copper foil and modified by introducing different flow rates of NH3 during graphene synthesis using thermal chemical vapor deposition (TCVD) at atmospheric pressure. Generally, graphene will become p-type semiconductor after adsorbing the O2 or steam in the air, while doping nitrogen into graphene can change it to n-type semiconductor. The O2 molecules could capture electrons from graphene when they adsorbed onto graphene surface. Therefore, for the p-type graphene, which the main carrier is hole, the current will consequently increase due to the electrons are captured by the adsorption O2 molecules and therefore enhances the hole concentration. On the contrary, the current of the n-type graphene will decrease while the electrons, the main carriers, are captured by the O2 molecules on the surface resulting in the reduction of the electron concentration. Moreover, we also measured the Dirac point of graphene-based FETs to confirm whether the graphene is p- or n-type. The Dirac point of pristine graphene is located at +85 V indicating the hole concentration is larger than the electron concentration. As the nitrogen content of graphene increased, the Dirac point shifts negatively to -30 V, which means that the electron concentration is larger than the hole concentration. As a result, we have not only successfully modified graphene by introducing NH3 during the growing process, but also demonstrated that the O2 gas adsorption measurement is a quite helpful method to identify the graphene's semiconducting type. Besides, a hybrid 3-D structure, CNTs/graphene, was fabricated through the combination of highly conductive graphene (2-D) and photolithographically patterned CNT (1-D), which has the following advantages: (1) The C-C bonding of the interface can effectively lower the impedance; (2) The structure can enhance the electron transmission speed in the device. Using this structure, the field emission device (FED) and gas sensing device were applied. Highly crystalline graphene which can replace the ITO was used as the anode of the FED. Besides, the hexagonal close-packed bundle arrays of VACNTs were successfully synthesized on graphene and used as a field emission emitter. The field emission current density can reach 10-1 mA/cm2 under the applied electric field of 2.7 V/m. Combining the hybrid structure of VACNT and graphene, the all carbon-based FEDs showed stable electron emission properties and uniform luminance, demonstrating the suitable application for FED. On the other hand, we used the carbon nanowall (CNW), an allotrope of carbon, to be the electrode for electric double layer capacitor application. The synthesized CNWs on the carbon cloth surface presented high number density, high direct aspect and large surface area, which can increase the reactive surface between the electrode and electrolyte. Besides, it is known that the NiO possesses certain properties such as high electrochemical stability and quickly reversible redox reaction at the electrode surface. The NiO nanostructures were formed onto the CNWs surface uniformly by the vacuum annealing process and oxygen plasma treatment. The electrochemical measurements demonstrated that the NiO/CNWs/carbon cloth performed high specific capacitance and good stability.

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