本論文研製以具有C軸（002）擇優取向的氧化鋅為壓電材料及以多孔性二氧化矽做為基材取代現今氣隙型的薄膜體聲波振盪器，其結構分別為上電極／氧化鋅壓電薄膜／下電極／多孔性基材。多孔性基材以球磨、混粉、壓碇和燒結等程序製作而成。再搭配微影製程和射頻磁控式濺鍍法在多孔性基材上製作上、下金電極及氧化鋅壓電薄膜。材料分析使用X光繞射儀來鑑定薄膜結晶方向，並輔以掃描式電子顯微鏡來觀察薄膜表面和截面形貌。
　　由實驗的結果得知，多孔性二氧化矽粉末經球磨、混粉、壓碇和燒結等程序製作而成之多孔性二氧化矽基材具有22%的孔隙率。而以2”的ZnO靶材、射頻功率50W、鍍膜壓力4.0×10-2-6.0×10-2 torr、氬氣流量22 sccm、靶材與基材間距離8 cm、基板不加溫的情況下，能成功的在Au／Si基材及Au／多孔性二氧化矽基材上成長（0002）擇優取向的氧化鋅薄膜。並且在多孔性二氧化矽基材上結合微影製程及射頻磁控式濺鍍法濺鍍上、下電極、氧化鋅薄膜，製作出薄膜體聲波元件。

　　This study uses perfect C-axis preferred orientated zinc oxide as a piezoelectricity material and porous silica substrate as air gap for thin film bulk acoustic wave resonator. Structure of the resonator is composed of upper electrode / zinc oxide piezoelectric thin film / lower electrode / porous substrate. The porous substrate is fabricated by ball milling and powder mixing of silica followed by pressing into bulk and sintering. The upper and lower golden electrodes and zinc oxide piezoelectric thin film are deposited by RF magnetron sputtering. Patterns of electrodes and piezoelectric layer are formed by lithographic and lift-off processes. Structure and orientation of the thin film are characterized by X-ray diffraction and the surface and cross-section are observed by SEM.
　　We find the porous silica powder have 22% porosity after the procedure of above process. We can grow perfect C-axis preferred orientated zinc oxide on Au / Si substrate and Au / porous silica substrate by RF magnetron sputtering using 2” ZnO target, RF power 50 W, sputtering pressure 4.0X10-2 – 6.0X10-2 torr, Argon flow 22 sccm, the distance between the target and the substrate 8 cm without heating the substrate. At final, we combine lithography technique and RF sputtering system to grow upper, lower electrode and zinc oxide thin film to fabricate the thin film bulk acoustic wave device.

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