本研究利用反應式離子束濺鍍法沉積氧化鈷與摻銅氧化鈷薄膜，改變氧氣/氬氧的流量比例(Opf = O2/(Ar+O2))及沉積溫度，探討製程參數對氧化鈷及摻銅氧化鈷之影響。研究結果顯示在室溫下所沉積之樣品皆為非晶結構，當Opf由0.2增加至1.0時，氧化鈷薄膜的電阻率由5 ohmic-cm 降至0.5 ohmic-cm，而摻銅氧化鈷之電阻率卻由0.5 ohmic-cm 降至10-3 ohmic-cm。

Cobalt oxide and copper-cobalt oxide have been deposited by reactive ion beam sputter deposition. The effect of deposition temperatures and oxygen partial flow rates Opf ( = O2/(O2+Ar)) on the properties of cobalt oxide and copper-cobalt oxide thin films were characterized. Experimental results show that all samples deposited at room temperature are amorphous. As Opf increases from 0.2 to 1.0, the resistivity of cobalt oxide drops from 5 to 0.5 ohmic-cm, while the resistivity of copper-cobalt oxide drops from 0.5 to 10-3 ohmic-cm.

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