本論文使用有機金屬氣相沈積法(metalorganic chemical vapor deposition, MOCVD)製備氮化鎵/氮化銦鎵發光二極體，分別利用添加ZnO當作緩衝層、改變GaN在高溫成長初期時的原料供給V/III比、以及在p-GaN層導入反平行電域結構等方法，以改善材料品質、降低缺陷及提升發光二極體的光電特性。

本研究發現，(i)在sapphire上先成長ZnO緩衝層，再成長氮化鎵系藍光LED，可得到缺陷較低的GaN薄膜及光電特性較佳的LED。(ii)藉由改變GaN高溫成長初期階段的原料供給V/III比，可促使c-面GaN在圖案化基材(PSS)的圖案(非c-面sapphire)及圖案間距(c-面sapphire)做選擇性成長。此時低原料供給V/III比的成長環境可成功在PSS上成長平坦且高品質的GaN薄膜，其HRXRD在(002)面及(102)面量測繞射峰的FWHM分別為295.4 arcsec及309.7 arcsec。(iii)以應力累積的方式形成具有Ga-及N-極性反向並排共存區(antiparallel Ga- and N-polar coexistent domains)的p型GaN層，可將LED的人體模式抗靜電(electrostatic discharge, ESD)能力提升至4000 V。

In this study, we fabricated gallium nitride/indium gallium nitride light-emitting diode (LED) by metalorganic chemical vapor deposition (MOCVD) technique. The effects of introducing a ZnO buffer layer prior to the low-temperature GaN buffer layer growth, varying V/III precursor feed ratio during the high-temperature GaN initial growth stage, and deliberating an antiparalled polar domains structure in the p-GaN layer region were explored so as to reduce film dislocations, improve epitaxy quality and LED device optoelectronic properties.

First of all, GaN-based blue LEDs fabricated on sapphire substrates with a ZnO buffer layer exhibited a lower threading dislocation density in the epitaxially grown GaN layers and an improved device performance. Adjusting a lower V/III precursor feed ratio of 829 during the high-temperature GaN initial growth stage favored selective-area growth on patterned sapphire substrates, leading a successful conversion of three-dimention to two-dimention GaN epitaxial growth. Finally, we found for the first time that the coexistence of antiparallel Ga-polar and N-polar domains in the p-type GaN layer region improves the electrostatic discharge (ESD) endurance ability of the InGaN blue light-emitting diodes, by increasing the negative HBM-ESD 4000 V pass yield to greater than 90%. The inversion of Ga- to N-polarity in this region can be controlled by the extent of stress accumulated in the underlying layers.

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