應用於背光模組及雷射印表機之發光二極體設計與製作

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研究生：	陳致中 Chih-Chung Chen
論文名稱：	應用於背光模組及雷射印表機之發光二極體設計與製作 Design and Fabrication of Light-Emitting Diodes for Backlight and Laser Printer Applications
指導教授：	李三良 San-Liang Lee
口試委員:	曹恆偉 Hen-Wai Tsao 廖顯奎 Shien-Kuei Liaw
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2007
畢業學年度：	95
語文別：	中文
論文頁數：	56
中文關鍵詞：	發光二極體、邊射型、光子晶體
外文關鍵詞：	Light-Emitting Diode, Edge-Emitting, Photonic Crystal
相關次數：	點閱：201 下載：4
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本論文主要在探討利用商用氮化鎵二極體晶片，製作橫向光場分布的邊射型發光二極體，另外一方面則是探討二維光子晶體於面射型發光二極體表面週期性結構造成布拉格散射，減少全內反射情形發生以提升集光效率。
在原理的部份，主要說明發光二極體原理與全內反射形成原因，以及週期性結構形成布拉格散射的方式，以此作為設計特殊半月形波導結構以及鋪設光子晶體的參考。
除此之外，討論半月形波導結構的結果以及未來可改進的方向，並利用了全像術的方式，在晶片表面製作一氧化矽的光子晶體結構，由光激發螢光量測結果，得知以光子晶體可改變發光二極體的出光方向及效率。

This thesis includes two research topics. One is to fabricate edge-emitting light-emitting-diodes on a commercial GaN LED epi-wafer for using as line sources for fiber cloth or laser printing applications. Another is to employ two-dimensional photonic crystals on surface-emitting light-emitting-diode to lower the phenomenon of total internal reflection and enhance the external quantum efficiency by the effects of Bragg scattering.
We design special Half-Moon waveguide structure for the edge-emitting devices in order to reduce the facet reflection. This can avoid the resonant effect. The measured device results indicate that most light is emitted from the edge-emitting end facets. Current devices have relatively low output power due to the high electrical and thermal resistance of the device structure where the thick substrate was not removed. This issue has to be overcome for improving the device performance in the future.
By using the holographic exposure method, we fabricate SiO based photonic crystals on the surface of a LED wafer. From the PL measurement, we find that adding the photonic crystal structure can indeed change the radiation direction of output light and enhance the extraction efficiency.

摘要						 I
Abstract						 II
致謝						 III
目錄						 IV
圖表目錄					          VII
第一章	 導論					 1
1-1前言						 1
1-2研究目的及動機				          5
1-3近代外部轉換效率改善之研究		          7
1-4論文架構					 8
第二章	 發光二極體特性與原理			10
2-1 發光二極體原理與效率、結構以及模擬	         10
2-2光輸出錐角					11
2-4 布拉格散射					14
2-5 P-type金屬選擇				         15
2-6 光激發螢光量測原理與架構			16
第三章	 設計與模擬結果			         18
3-1光取出主要方式				         18
3-2結構設計與模擬				         23
3-3模擬與結果					28
第四章	 製程方法與結果討論			32
4-1 蝕刻製程					32
4-2製程方法					32
4-3 元件成品圖					35
4-4 半月形波導電極LED特性			         40
4-4-1 L-I-V量測與遠場圖形			         40
4-4-2光場與模擬比較				41
4-4-3熱阻抗分析					46
4-5 光激發螢光量測				         48
第五章	 結論					50
5-1成果與結論					50
5-2 未來方向					51
參考文獻					         53

                                

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