研究生: |
楊家文 Chia-Wen Yang |
---|---|
論文名稱: |
二硫化鈦奈米晶體之電傳輸特性研究 Electronic Transport Properties in TiS2 Nanocrystals |
指導教授: |
趙良君
Liang-Chiun Chao 陳瑞山 Ruei-San Chen |
口試委員: |
陳瑞山
Ruei-San Chen 趙良君 Liang-Chiun Chao 田禮嘉 Li-Chia Tien 謝雅萍 Ya-Ping Hsieh 李奎毅 Kuei-Yi Lee |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 中文 |
論文頁數: | 87 |
中文關鍵詞: | 二硫化鈦 、光電導 、半導體 |
外文關鍵詞: | TiS2, titanium disulfide, solid state method |
相關次數: | 點閱:172 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
[1] J. Lu, F. Lian, Y. Zhang, N. Chen, Y. Li, F. Ding, X. Liu, “Sulfide cluster vacancies inducing an electrochemical reversibility improvement of titanium disulfide electrode material”, Journal of
Materials Chemistry A, Vol. 8, pp. 6532–6538, (2020).
[2] D. L. Greenaway, R. Nitsche, “Preparation and Optical Properties of Group IV−VI2 Chalcogenides Having the CdI2 Structure”, J. Phys. Chem. Solids, Vol. 26(9), pp. 1445-1458, (1965).
[3] A. H. Thompson, K. R. Pisharody, and R. F. Koehler, “Experimental Study of Solid Solutions TixTa1-XS2”, Phys. Rev. Lett, Vol. 29(3), pp. 163−166, (1972).
[4] R. H. Friend, D. Jirromet, W. Y. Liang, J. C. Mikkelseng and A. D. Yoffe, “Semimetallic character of TiSe2 and semiconductor character of TiS2 under pressure”, Journal of Physics C: Solid State Physics, Vol. 10(24), L705–L708, (1977).
[5] C. H. Chen, W. Fabian, F. C. Brown, K. C. Woo, B. Davies, B. DeLong, and A. H. Thompson, “Angle-Resolved Photoemission Studies of the Band Structure of TiSe2 and TiS2”, Phys. Rev. B, Vol. 21(2), pp. 615−624, (1979).
[6] C. Umrigar, D. E. Ellis, D. S. Wang, H. Krakauer, and M. Posternak, “Band Structure, Intercalation, and Interlayer Interactions of Transition-Metal Dichalcogenides: TiS2 and LiTiS2”, Phys. Rev. B, Vol. 26(9), pp. 4935−4950, (1982).
[7] K. Chen, M. Song, Y. Y. Sun, H. Xu, D. C. Qi, Z. Su, X Gao, Q. Xu, J. Hu, J. Zhu, R. Zhang, J. Wang, L. Zhang, L. Cao, Y. Han, and Y. Xiong, “Defects controlled doping and electrical transport in TiS2 single crystals”, Appl. Phys. Lett, Vol. 116, pp.121901, (2020).
[8] F. Braet, R. De Zanger, and E. Wisse, “Drying cells for SEM, AFM and TEM by hexamethyldisilazane: a study on hepatic endothelial cells”, Journal of Microscopy, Vol. 186, pp. 84–87, (1997).
[9] P. Carra, B. T. Thole, M. Altarelli, X. Wang, “X-ray circular dichroism and local magnetic fields”, Physical Review Letters, Vol. 70(5), pp. 694, (1993).
[10] B. D. Cullity, S. R. Stock, “Elements of X-ray diffraction,” Prentice Hall, New Jersey (2001).
[11] A. Beiser, “Concepts Of Modern Physics”, McGraw-Hill Education (India) Pvt Limited (2003).
[12] P. E. J. Flewitt and R. K. Wild, “Physical methods for materials characterization”, IOP Publishing, Bristol, (1994).
[13] A. A. Tseng, K. Chen, C. D. Chen, and K. J. Ma, “Electron Beam Lithography in Nanoscale Fabrication: Recent Development”, IEEE Trans. Electron. Packag. Manuf., Vol. 26, pp. 141–149, (2003).
[14] A. A. Tseng, “Recent developments in micromilling using focused ion beam technology”, J. Micromech. Microeng., Vol. 14, pp. R15–R34, (2004).
[15] A. A. Tseng, “Recent Developments in Nanofabrication using Focused Ion Beams”, Small, Vol. 1, pp. 924–939, (2005).
[16] Y. M. Chang, H. Kim, J. H. Lee, and Y. W. Song, “Multilayered graphene efficiently formed by mechanical exfoliation for nonlinear saturable absorbers in fiber mode-locked lasers”, Appl. Phys. Lett., Vol. 91970, pp. 211102 (2010).
[17] C. Y. Nam, D. Tham, J. E. Fischer, “Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires”, Nano Lett., Vol. 5, pp. 2029-2033 (2005).
[18] 朱煜文, “二硫化鎢層狀半導體之電子結構與電傳輸特性”,國立臺灣科技大學應用科技研究所碩士學位論文 (2019).
[19] Donald A. Neamen, “Semiconductor Physics and Devices”, (2011).
[20] C. Lin, X. Zhu, J. Feng, C. Wu, S. Hu, J. P, Y. Guo, L. Peng, J. Zhao, J. Huang, J. Yang, Y. Xie, “Hydrogen-incorporated TiS2 Ultrathin Nanosheets with Ultrahigh Conductivity for Stamp-transferrable Electrodes”, J. Am. Chem. Soc., Vol. 135(13), pp. 5144–5151, (2013).
[21] 彭子恩, “高導電度層狀硫屬化合物之晶體成長與特性研究”, 國立臺灣科技大學應用科技研究所碩士學位論文 (2019).
[22] L. E. Conroy, K. C. Park, “Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide”, Inorganic Chemistry, Vol. 7(3), pp. 459–463, (1968).
[23] C. G. Hawkins and L. W. Brooks, “Controlling Sulfur Vacancies in TiS2−x Cathode Insertion Hosts via the Conversion of TiS3 Nanobelts for Energy-Storage Applications”, ACS Appl. Nano Mater., Vol. 1, pp. 851−859, (2018).
[24] P. Bhattacharya, “Semiconductor optoelectronic devices”, Prentice Hall, New Jersey, Vol. 8, pp. 346-351, (1997).
[25] M. Razeghi, A. Rogalski, “Semiconductor ultraviolet detectors”, J.Appl. Phys., Vol. 79, pp. 7433-7473, (1996).
[26] R. S. Chen, H. Y. Chen, C. Y. Lu, K. H. Chen, C. P. Chen, L. C. Chen, Y. J. Yang, “Ultahigh photocurrent gain in m-axial GaN nanowires”, Appl. Phys. Lett., Vol. 91, pp. 223106, (2007).
[27] R. S. Chen, W. C. Wang, C. H. Chan, H. P. Hsu, L. C. Tien, Y. J. Chen, “Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition”, Nanoscale Res. Lett., Vol. 8, pp. 443, (2013).
[28] C. Fabrega, F. Hernandez-Ramirez, J. D. Prades, R. Jimenez-Diaz, T. Andreu, J. R. Morante, “On the photoconduction properties of low 93 resistivity TiO2 nanotubes”, Nanotechnology, Vol. 21, pp. 445703, (2010).
[29] R. S. Chen, T. H. Yang, H. Y. Chen, L. C. Chen, K. H. Chen, Y. J. Yang, C. H. Su, C. R. Lin, “Photoconduction mechanism of oxygen sensitization in InN nanowires”, Nanotechnology, Vol. 22(42), pp. 425702, (2011).
[30] H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang, “Photoconductivity in single AlN nanowires by subband gap excitation”, Applied Physics Letters, Vol. 96(6), pp. 062104, (2010).