本研究主要包含兩個主題，第一部份為天線整合K頻帶低雜訊放大器，K頻段在24-24.25 GHz是不需執照的，也因此成為汽車雷達的主流頻帶。在主動部分吾人提出兩種版本之低雜訊放大器，一個將放大器的輸入雜訊阻抗(Zopt)匹配至阻抗50歐姆附近，另一個則去除放大器的輸入匹配僅保留隔直電容(DC-blocking capacitor)，透過晶片外匹配網路將天線的輸入阻抗設計至對應放大器的Zopt，而這兩種版本的電路有著相同的電晶體尺寸、偏壓以及集總元件值，唯一區別在於輸入匹配網路存在與否，以上兩種版本的晶片皆由台積電提供的0.18-μm互補式金氧半導體製程來實現，天線部分採用基板整合波導的開槽天線陣列，最後透過磅線將兩者合成主動天線。
第二部分提出設計在毫米波頻帶之功率放大器，使用穩懋提供的0.15-μm GaAs pHEMT製程製作，在輸出負載匹配上，利用磁耦合共振架構(Magnetically coupled resonator)及多階匹配網路來擴展頻寬，最後透過on-wafer量測，24.7-39.6 GHz皆大於14.9 dB，飽和輸出功率(Psat)在24.5-38 GHz都有大於23.8 dBm，Psat 1dB頻寬達43.2%，功率附加效率最高可以達32.8%，雖與模擬相比頻寬有所縮減，但仍涵蓋多個毫米波頻段，晶片面積為2*1 mm2。
本論文將詳盡介紹兩個主題的設計流程、電路架構，以及模擬與量測的結果比較，並加以探討分析兩者誤差可能之原因所在。

This thesis includes two main researches.The first part is the active antenna integrated with K-band low noise amplifier, K-band frequency from 24 GHz to 24.25GHz is an unlicensed band, It has become the mainstream frequency band for automotive radars. In the active part, two versions of low-noise amplifiers are proposed.One version matches the amplifier's Zopt to 50 ohms, the other removes the input matching of the amplifier and only retains the DC-blocking capacitor and match the input impedance of the antenna to the Zopt,the two versions of the circuit have the same transistor size, bias voltage and lump component value, the only difference is whether the input matching network exists or not, the circuit is implemented using 0.18-μm CMOS by TSMC.Slotted antenna array adopts substrate integrated waveguide. Finally,Both of them are combined into an active antenna via the wire bonding.
In the second part, the millimeter-wave band power amplifier is designed, this circuit uses the 0.15-μm GaAs pHEMT process provided by WIN semiconductor. In the output load matching, the magnetically coupled resonator and multi-stage matching network are used to expand the bandwidth. Finally, through on-wafer measurement, |S_21 | is greater than 14.9 dB at 24.7-39.6 GHz, the saturated output power (Psat) is greater than 23.8 dBm at 24.5-38 GHz.Psat 1dB bandwidth is 43.2%,PAEpeak up to 32.8%.Although the bandwidth is reduced compared with simulation,it still covers more millimeter wave frequency band.
This paper introduce the design process, circuit layout and comparison of simulation and measurement results of the two topics, and analyze the possible reasons for the differences.

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