為實現於下世代四百千億位元率(400G)位元率乙太網路協定網路標準介面，需要波長為1310 nm之高速雷射光源，本論文以含鋁的四元材料做為主動層材料，製作積體化分佈反饋式雷射與電致吸收調變器。積體化製作是為縮小元件體積且增加元件可靠度；因雙元件於同一波導傳輸，也可有效率降低耦合損耗；此積體化元件可達到高位元傳輸及低驅動電壓；積體化製作元件更可以大幅降低其製程成本及時間。由於上述優點，讓積體化電致吸收雷射光源成為高速光纖通訊系統相當關鍵的元件。
本論文採用Matlab撰寫傳輸矩陣程進行光柵結構的分析與設計。先以傳輸矩陣探討不同光柵對於整體雷射的臨界增益及增益差值的影響，發現具部份式光柵的分佈反饋式雷射比起一般分佈反饋式雷射有較佳的增益差值，可以設計出具較佳單波長特性雷射元件。
在實驗驗證方面，製作傳統與部份式光柵分佈反饋式雷射以進行雷射性能比較，量測兩種雷射結構的效能，並成功製作雷射與電致吸收器的積體化元件，量測不同長度的電致吸收器吸收頻譜，證實所採用材料可以具備有效的吸收調製特性。

To realize the transceivers for next generation 400-Gb/s network interface in IEEE802.3ba Ethernet interface protocol, high-speed laser sources at 1310 nm wavelength are needed. This thesis design and fabricate distributed feedback lasers (DFB) and electroabsorption modulators (EAMs) using AlInGaAs material as the active layers. The objective of Integration is to reduce the component size and coupling loss. The EAM can transmit high data rate with low driving and modulation voltage. The integration can also reduce the manufacturing cost and time. The above-mentioned advantages make the integrated electroabsorption modulated laser (EML) a key component for high-speed optical communication systems.
We analyze different grating structure by using Matlab programs. The threshold gain and gain difference of DFB lasers with different grating structures is calculated by using the transfer-matrix method. It is found that the partial grating DFB lasers have better gain difference than a standard DFB laser.
The partial grating DFB lasers and standard DFB lasers based on AlInGaAs quantum wells are fabricated and tested for performance comparisons. We also fabricated the integrated EMLs and measure the electro-absorption characteristics of different EAM lengths. The results indicate that the AlInGaAs material structure can provide large electro-absorption characteristics.

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