氮化鎵材料生長在藍寶石基板難以劈裂，本論文研究以非劈裂式方法製作邊射型雷射共振腔反射面，用黃光微影與乾式蝕刻定義出共振腔的區域，並以奈米壓印微影技術取代電子束微影技術製作氮化鎵分佈回饋式雷射的光柵結構，由於奈米壓印微影技術僅需先使用電子束微影技術製作出模具，即可以複製壓印的方式多次且快速地製作出奈米等級的結構，降低所需的時間與成本。
本實驗的奈米壓印尚未成功製作出氮化鎵分佈回饋式雷射的光柵結構，由掃描式電子顯微鏡結果來看，約有二種週期性的排列，研判大週期性的排列是由空氣產生的，由於本實驗使用的奈米壓印機台操作環境為非高真空環境，介面空氣在壓印過程難以排出，導致出現大週期性的非光柵壓印痕跡的排列，但在大週期之間，有成功壓印出光柵週期，但對比於空氣造成的大週期壓印痕跡過於淺，以至於後續蝕刻無法有效達到所需的光柵週期。
雖然本實驗沒有成功製作出氮化鎵分佈回饋式雷射的光柵結構，但透過I-V&L-I量測系統，並配合CCD作影像觀察，元件的電性量測結果皆在合理的範圍內，寬度愈小的元件相同電流下出光功率愈大。

GaN-based material grown on sapphire substrate is hard to cleave a laser facet. This study used non-cleaving approach to produce reflectors for edge-emitting laser. Photolithography and dry etching were used to define the area of a resonator. And nanoimprint lithography (NIL) instead of traditional electron beam lithography was utilized to produce a grating structure on top of a gallium nitride epitaxial wafer for making a distributed feedback laser. NIL manufacturing only require a previously made mold by using electron beam lithography and use the mold to imprint repeatedly and quickly to produce nano-level structure, reducing time and cost.

The nanoimprint experiment did not successfully produce a grating structure for gallium nitride based distributed feedback laser. From the results of scanning electron microscope imaging, we observed two kinds of periodic structures of which the one with an unwanted period was likely generated by the interface air between the mold and imprinted material. Because the nanoimprint machine was not operated in a high vacuum environment, it was difficult to exile the interface air during imprinting. In between the unwanted periodic structure, there appeared a grating with a correct period but of shallow depth, so that subsequent etching can not be performed.

Although this study has not yet successfully fabricated a grating structure for gallium nitride based distributed feedback laser, the devices’ electro-luminance characteristics such as I-V & L-I curves and CCD images were reasonably good. Moreover, diodes with smaller width exhibited larger optical power under the same injection current as expected.

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