本論文主要之研究為雙量子井結構的積體化技術，所積體化之元件為分佈反饋式(DFB) 雷射與電致吸收調變器(EAM)，由於將此兩元件進行積體化的優點在於兩者均為光通訊系統中具備重要功能的特性元件，如進行積體化後，其優點在於該積體化元件具有極小的元件體積，由於雙元件共用同一波導進行訊號傳輸，因此有效地降低原本離散元件之光傳輸損耗，亦能達到高速調變、高傳輸容量、低驅動電壓、極化不敏感等優勢因此也適合運用於高速度、高頻寬及長距離的通訊系統中。就製作成本而言，積體化元件可以大大降低其製作成本與製程時間，以上的優勢讓電致吸收調變雷射在未來光通訊產業將佔有重要的地位。
本論文利用雙量子井結構的目的在於利用兩組不同的量子井分別提供雷射光增益區與調變器光吸收區之功能，在量子井材料結構選擇方面，本論文的雙量子井結構分別利用不同之壓縮應力的磷砷化銦鎵(InGaAsP)材料於雷射光增益區與EAM光吸收區中，分別提供電光增益輸出與電致吸收調變的材料能隙。材料結構的分析是指用既有之套裝軟體分別分析雷射結構特性與光場侷限的特性，再搭配程式分析調變器的材料吸收係數。計算出本論文所製作之實際元件中雷射增益區與調變器之量子井波導的光侷限因子分別為0.0626與0.1855，而內部耦合效率約為88%。再利用該計算結果推估不同長度下的EAM所對應的光信號明滅比及插入損耗，本論文循此方式提供整體元件最佳化之結構與材料參數。
實驗成果方面，本論文成功製作出分佈反饋式雷射與電致吸收調變器及其積體化之電致吸收調變雷射。就分佈反饋式雷射之特性而言，在元件長度800微米的分佈反饋式雷射之臨限電流約為78 mA左右，波長位置為1610 nm，旁模抑制比大於50 dB，最大光輸出功率可達到3 mW，接觸阻抗約在7.3 Ω。而就電致吸收調變器而言，在最佳工作點操作下( -2 V±1 V)，具有最大的吸收光功率量，而最佳調變波段約為1.58~1.62 m，光信號明滅比可達18 dB。

Monolithically photonic integration to realize electro-absorption modulated laser (EML) has the advantages of small device area, low cost, low insertion loss, low driving voltage, polarization insensitivity, and high modulation bandwidth, thus is promising for high-speed and long-distance optical communication system. The thesis focuses on the monolithically integration of distributed feedback (DFB) laser and electro-absorption modulator (EAM) on single chip using dual multi-quantum well platform. The dual multi-quantum wells are designed to have different material strains and energy bandgaps for optical gain and optical modulation region, respectively. For device optimization, the multi-quantum well structures are designed using PICS3D software while the optical confinement characteristic in the laser structure is analyzed using FIMMWAVE software. Material absorption coefficient of quantum well set for optical modulation is calculated with Matlab program. The simulation reveals that the optical confinement factor for optical gain and modulation regions are 0.0626 and 0.1855, respectively, while the internal coupling efficiency between two regions is about 88%. The results are then used to calculate the optical extinction ratio and insertion loss of the EAM with different device lengths. Following the aforementioned procedure, we are able to optimize the entire chip parameters in order to achieve an EML capable of providing an optical extinction ratio of >10 dB and a modulation bandwidth of > 10 GHz.
For experimental demonstration, we have successfully fabricated monolithically integrated EML with our optimized dual multi-quantum well configuration. The integrated DFB laser has a threshold current of around 78 mA, a lasing wavelength of 1610 nm, a side-mode suppression ratio of > 50 dB, an electrical contact resistance of 7.3 ohm, and a optical output power of 3 mW. The integrated EAM is biased at around -2 V to allow maximum optical absorption at the wavelengths of around 1.58~1.62 m and an optical extinction ratio of 18 dB.

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