為實現能乘載高位元率的雷射光源，本論文以相同的含鋁四元材料作為分佈反饋式雷射與電致吸收調變器的主動層材料，積體化製作具有相同量子井之電致吸收調變雷射光源。積體化有體積較小且傳輸損耗較少等優點。
本論文承續先前的研究，製作與量測電致吸收調變雷射，並做元件特性分析，以供後續優化此型光源。以相同量子井材料實現電致吸收調變雷射的主要挑戰在於雷射波長的選擇，必須使雷射維持較佳性能，且電致吸收調變器能有高消光比及較低損耗。由於採用新的含鋁量子井結構，希望透過各種量測了解此材料作為雷射與調變器的特性。
完成製作具相同材料量子井之電致調變雷射後，針對不同腔長之雷射做元件的特性分析，探討其溫度對於雷射中心波長與光功率之變化，並利用雷射光源量測吸收頻譜，證實改變主動層材料與光柵設計後能有效吸收並提高消光比，量測分析量子井結構之特性，並討論雷射與電致吸收調變器增益位置對於吸收效應的影響。

To realize the high-speed light sources to carry large data rates, this thesis investigates the feasibility of realizing electroabsorption-modulated lasers (EMLs) where the same AlInGaAs quantum wells are used as the active layers for both the laser and modulator sections. The integration of laser with modulator can have the merits of smaller device size and less optical coupling loss.
Most of this work succeeds the device structure and fabrication procedures developed in the prior work of our group, but the laser wavelength is placed outside the absorption band of the AlInGaAs quantum wells. The lasing wavelength is a critical parameter in realizing EMLs with identical quantum wells since it affects both the laser performance as well as the extinction ratio (ER) and insertion loss of the modulator.
The integrated EMLs are fabricated and tested for performance analyses. We measure the laser characteristics for different cavity lengths. The results indicate that wavelength and output power are strongly affected by the temperature change.

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