線式線鋸鑽石顆粒尺寸對切割單晶矽製程影響之研究｜國立臺灣科技大學博碩士論文系統

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研究生：	LE NAM QUOC HUY LE NAM QUOC HUY
論文名稱：	線式線鋸鑽石顆粒尺寸對切割單晶矽製程影響之研究 Effects of Grits Size on Diamond Wire Sawing Process of Monocrystalline Silicon Wafers
指導教授：	陳炤彰 Chao-Chang Chen
口試委員:	趙崇禮蔡子萱莊程媐邱永傑陳炤彰
學位類別：	碩士 Master
系所名稱：	工程學院 - 機械工程系 Department of Mechanical Engineering
論文出版年：	2020
畢業學年度：	108
語文別：	英文
論文頁數：	147
中文關鍵詞：	鑽石線切割、鑽石顆粒大小、單晶矽晶圓、Johnson-cook 方程式、比切削能
外文關鍵詞：	Diamond wire sawing, Diamond grit size, Slicing monocrystalline-silicon ingot, Johnson-cook function, Specific cutting energy
相關次數：	點閱：170 下載：4
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在現今半導體工業的製程中晶片的平坦化是必經的過程，而晶錠的切片技術是決定晶片平坦化質量的第一步。如今，固定鑽石線切割（DWS）被普遍應用於晶錠的切片製程。而鑽石線材的切割效率取決於晶錠的材料屬性、冷卻劑和鑽石磨粒特性之間的相互作用。因此，鑽石的形狀和晶粒尺寸分佈在切割時格外重要。這項研究旨在模擬鑽石線的鑽石磨粒形狀及於單晶矽晶錠切片過程的影響。以有限元素法和Johnson-Cook函數計算鑽石磨粒的位移和應力分佈。本研究以直徑為170μm的鑽石計算單晶矽晶錠切片時的切削能，並在實驗後測量單晶矽切片的形狀和表面粗糙度。經由掃描電子顯微鏡（SEM）量測出鑽石磨粒的橫截面尺寸約為40μm至55μm，而平均突出高度為12.5μm。以Solidworks軟件建模並以過Abaqus軟件執行刮痕試驗來驗證單晶矽錠的材料參數。刮痕試驗的結果中，最大的刮痕深度來自40μm的鑽石磨粒。而在50μm和55μm的鑽石磨粒則有幾乎相同的刮痕的深度。結果顯示隨著鑽石磨粒直徑的增加，應力分佈變得更加均勻，因此能得到較小的刮痕深度，所以55μm鑽石磨粒是4種類型的鑽石中效果最好的。研究結果可用於優化鑽石線鋸的製程，並根據特定的切割能量決定切片時的加工參數。
關鍵字: 鑽石線切割、鑽石顆粒大小、單晶矽晶圓、Johnson-cook 方程式、比切削能。

Planarization of wafers is necessary in the semiconductor industry, and the ingot slicing process is the first step to affect the quality of wafer planarization. Nowadays, fixed diamond wire sawing (DWS) has been mostly used in slicing process. The cutting efficiency of DWS is determined by the interplay between the material properties of crystal ingot, coolant, and the characteristics of diamond grits on wire. Hereby, the shape and grain size distribution of diamonds are important. This study aims to simulate the diamond grit size to evaluate the effects slicing process of the monocrystalline silicon. The finite element method and Johnson-Cook function are used to evaluate the displacements and stress distributions on each diamond girts. The specific cutting energy with monocrystalline silicon ingot are calculated for diameter 170μm fixed diamond wire. The chip shape and roughness of the slicing monocrystalline silicon wafer has been measured and investigated in this study of DWS. The size of cross section for diamond grits on the wire are ranged from 40μm to 55μm, and the average protrusion height is 12.5μm with cone shape obtained by scanning electrical microscope (SEM) images. Material parameters of monocrystalline silicon ingot are verified by comparison of scratch tests. Simulation of the scratching process has been performed by Abaqus software and modeled by Solidworks software. Results show that the highest scratching depth is for 40μm diamond grit. For 50μm and 55μm diamond grits, results show the depth of scratching are almost the same. As diamond grit size increases, stress distribution becomes more uniform. Thus, the 55μm diamond grits is the best in 4 types of diamond grits because of the less fluctuation of scratching depth. Results of this research can be applied to optimize the manufacturing process of DWS and set up the of operating parameter for production.
Keywords: Diamond wire sawing, Diamond grit size, Slicing monocrystalline-silicon ingot, Johnson-cook function, Specific cutting energy.

Abstract    I
摘要    II
Acknowledgment    III
Table of Contents    IV
Nomenclature    VII
List of Figure    VIII
List of Table    XIII
CHAPTER 1 INTRODUCTION    1
1 Research background    1
2 Research objective    2
3 Research methodology    2
4 Thesis outline    2
CHAPTER 2 LITERATURE REVIEW    5
1 Free and fixed abrasive wire sawing process.    5
1.1Free abrasive wire sawing process.    5
1.2 Fix abrasive wire sawing process.    6
1.3 Comparison of diamond wire sawing and slurry wire sawing    7
2 Significant process performed in DWS    7
2.1 Surface morphology    7
2.2 Total thickness variation (TTV)    9
2.3 Subsurface damage(SSD)    10
3 Effect of abrasive properties in slicing process.    11
4 Specific cutting energy    13
4.1 Specific cutting energy formulation    16
5 Finite element method and applications    17
6 Scratching  simulation by finite element method    20
7 Summary of Literature Review    22
CHAPTER 3 SPECIFIC CUTTING ENERGY AND EXPERIMENTS OF SLICING MONOCRYSTALLINE SILICON INGOT    23
1 Experiment of slicing of Monocrystalline Silicon    23
1.1 Experiment devices    23
1.2 Setup parameters of experiments    32
1.3 Results of experiment    33
2 Summary of experiments    57
3 Wafer surface observation    59
4 Subsurface damage comparison    61
5 Calculation of specific cutting energy    63
6 Summary of chapter 3    66
CHAPTER 4 SCRATCH EXPERIMENTS AND VERIFICATION MATERIAL PARAMETERS    68
1 Experiment of scratching with TI980 Triboindenter machine    68
2 Results of experiments    70
2.1 Scratch experiments with gradient loading force.    70
2.2 Scratch experiments with fixed loading force    74
3 Simulation models for Nano indention    79
4 Verification of  parameters with the simulation model    82
4.1 Simulation of scratching with gradient loading    82
4.2 Comparison of experiments with gradient loading simulation    86
4.3 Simulation of scratching with fixed loading    87
4.4 Comparison of experiments with gradient loading simulation    92
5 Summary of Chapter 4    93
CHAPTER 5 SIMULATION OF SCRATCHING MONOCRYSTALLINE SILICON WITH SINGLE DIAMOND GRITS    94
1 Diamond grits model    94
2 Simulation model    99
3 Simulation results    100
4 Summarize simulation results    104
5 Summary of Chapter 5    108
CHAPTER 6 CONCLUSION AND RECOMMENDATIONS    109
1 Conclusions.    109
2 Recommendations.    109
References    111
APPENDIX    116

                                

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