本研究旨在研發電化學輔助固定式磨料研光製程(Electrochemical Assisted-Fixed Abrasive Lapping, ECA-FA Lapping)並應用於單晶矽晶圓之研光製程，將單晶矽晶圓接以陽極，固定式磨料研光盤接以陰極，並輔以電解液導通直流電使矽晶圓表面生成易於移除之鈍化層，以提升晶圓薄化製程之材料移除率，解決傳統磨削製程中多道次磨輪快速消耗以及容易產生次表層損傷的問題。研究方法將分成三個階段進行:於第一階段，進行電化學之鈍化驗證。透過動電位及恆電位極化曲線觀測鈍化區並選取電解液NaNO3水溶液之最適濃度。使用AFM以觀測鈍化層表面形貌。藉由橢圓偏光儀量測鈍化層厚度。利用奈米壓痕硬度試驗量測鈍化層硬度。透過拉曼光譜分析鈍化層之化學鍵結。於第二階段，藉由一進給控制的砂輪進行20 mm x 80 mm之矽晶片電化學磨削(Electrochemical Grinding, ECG)實驗，了解電壓、主軸轉速和主軸進給速率三項因子分別對矽晶圓體積材料移除率之影響，由三因子兩水準的實驗設計結果發現電壓和材料移除率呈現正相關。於第三階段，建構一電化學輔助固定式磨料研光系統，由晶圓拋光機台結合水循環系統和晶圓導電裝置組成。並自製一固定式磨料研光盤用於6吋矽晶圓之ECA-FA Lapping，利用前面階段的文獻回顧及實驗結果，選出ECA-FA Lapping參數進行實驗，比較ECA-FA Lapping和傳統未通電的FA-Lapping分別進行單晶矽晶圓之研光製程後體積之材料移除率(MRR)結果，得出ECA-FA Lapping之材料移除率較傳統FA Lapping高出44%，證實ECA-FA Lapping可達矽晶圓有效薄化之製程目標。

This study aims to develop an Electrochemical-assisted fixed abrasive lapping (ECA-FA Lapping) system to solve the issues of rapid consumption of multiple grinding wheels and the generation of subsurface damage in traditional grinding processes. The experiment is divided into three stages. In the first stage, this study focuses on electrochemical passivation verification. Through potentiodynamic and potentiostatic polarization curve, 10 wt% NaNO3 is selected as electrolyte based on passivation region. Surface morphology are observed by atomic force microscopy (AFM). Ellipsometry is employed to measure the thickness. Nanoindentation hardness tests are conducted and the hardness of the passivation layer can be confirmed. Raman spectroscopy is used to identify the chemical bonding and intensity of silicon-oxygen bond is significant. In the second stage, an Electrochemical Grinding (ECG) experiment is conducted on silicon wafers using a controlled feeding grinding wheel to investigate the effects of voltage, spindle speed, and feed rate. It can be found that voltage has positive correlation with material removal rate (MRR). In the third stage, an ECA-FA lapping system is constructed, composed of a wafer polishing machine, a water circulation system and wafer conductivity device. Additionally, a fixed abrasive lapping platen is fabricated. A comparison has been conducted between ECA-FA lapping and traditional non-electrochemical FA lapping of 6 inches silicon wafers. The volumetric MRR (MRRV) has been analyzed, revealing that the MRRV of ECA-FA lapping as 1.3 m exceed that of traditional FA lapping by 44%. This verifies that ECA-FA lapping can achieve the process objective of thinning of silicon wafers.

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