研究生: |
劉家銘 Chia-ming Liu |
---|---|
論文名稱: |
以有機金屬化學氣相沉積法於矽基板上成長一維的氮化銦鎵奈米線陣列之研究 Fabrication of Ternary InxGa1−xN Nanowire Arrays on Si Substrates by MOCVD technique |
指導教授: |
戴龑
Yian Tai |
口試委員: |
吳季珍
Jih-jen Wu 林麗瓊 Li-chyong Chen 陳貴賢 Kuei-hsien Chen 林保宏 Pao-hung Lin |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 英文 |
論文頁數: | 86 |
中文關鍵詞: | 調控發光 、矽基板 、化學氣相沈積 、氮化銦鎵奈米線 、穿透式電子顯微鏡 |
外文關鍵詞: | tunable emission, silicon, MOCVD, InGaN nanowires, TEM |
相關次數: | 點閱:421 下載:1 |
分享至: |
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本研究以有機金屬化學氣相沉積法於矽基板上成長出一維的單晶氮化銦鎵奈米線陣列。由愛克斯光繞射儀(XRD)分析可以得知所成長的氮化銦鎵奈米線為纖鋅礦結構。而由穿透式電子顯微鏡(TEM)的結果顯示奈米線呈現單晶結構且沿特定晶面的成長方向。在光學性質方面以光激發光譜(PL)測量結果發現藉由調控成長條件能夠改變銦在奈米線中的比例進而調控本質能隙的發光波長。根據實驗結果,我們成功地利用與工業界相同的有機金屬化學氣相沉積法製程於矽基板上製造出大面積且單相結構的奈米線。此成果將有機會應用到業界的生產規模。
We demonstrated the catalytic growth of InxGa1−xN nanowire (NW) arrays (0.06≦x≦0.17) on silicon substrate using metal-organic chemical vapor deposition technique. X-ray diffraction characterization confirmed that the InxGa1−xN NWs are single phase wurtzite structure without any binary phase. Transmission electron microscopy results showed that the single crystalline NWs were grown in (100) direction and dislocation-free. Photoluminescence results showed that the band gap of InxGa1−xN NW can be modulated down to the visible spectrum region depending on the ratio of In in the nanowires which can be modulated by varying the growth conditions. Our results suggest an approach to fabricate single phase, large area NW on silicon with standard MOCVD method, which offers an opportunity to transfer the production from research to industrial scale.
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