In this thesis, the electrical properties of the gallium nitride (GaN) have been studied.
Three different samples of GaN were prepared, GaN with GaN nucleation layers (NLs) named sample A, GaN with AlN NLs named sample B, and GaN with AlN NLs with graphene layer named sample C. To characterize the electrical properties of the gallium nitride, aluminium and titanium have been deposited as the ohmic contact and nickel metal as schottky contact, with 50nm, 30nm, and 100nm respectively. Both of ohmic and schottky contact have been deposited by using thermal evaporation with 99.9995 percent purity of the metal slug. The schottky contact itself used mask techniques with 500 micrometer diameter. All deposition process on the thermal evaporator itself has background pressure less than 2X10-6 torr with deposition rate was set at 0.2-0.3nm/s.

From the current-voltage measurement, the ideality factor and schottky barrier height of
the three samples can be extracted. From the CV measurement frequencies were increased
from 2 kHz to 50 kHz, the carrier concentration of the sample A shown little decrease and
have stable trend while for the sample B and C, the capacitance and carrier concentration
were greatly decreased. The GaN thin films also characterized by temperature dependent of IV and CV measurements. From the IVT measurement, sample A have a negative temperature coefficient series resistance, however for the sample B and C, the series resistance has positive temperature coefficient. From the CVT measurement the carrier concentration of
the sample A have a positive temperature coefficient (PTC) while for sample B and C, the
carrier concentration has NTC characteristics. IVT and CVT measurement is correlated with
each other, which mean the series resistance is decrease when the carrier concentration is increase and the carrier concentration is decrease when the series resistance is increased

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