研究生: |
陳婕誼 Chieh-Yi CHEN |
---|---|
論文名稱: |
氮化鎵成長於石墨烯/碳化矽基板之研究 Growth of GaN on graphene/SiC substrate |
指導教授: |
柯文政
Wen-Cheng Ke |
口試委員: |
葉旻鑫
Min-Hsin Yeh 張國仁 Kuo-Jen Chang |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 材料科學與工程系 Department of Materials Science and Engineering |
論文出版年: | 2019 |
畢業學年度: | 108 |
語文別: | 中文 |
論文頁數: | 83 |
中文關鍵詞: | 氮化鎵 、石墨烯 、碳化矽 、拉曼光譜 、原子力顯微鏡 、掃描電子顯微鏡 |
外文關鍵詞: | GaN, Graphene, SiC, Raman Spectum, AFM, SEM |
相關次數: | 點閱:256 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
Roccaforte, F. et al. Microelectronic Engineering Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. Microelectron. Eng. 187–188, 66–77 (2018).
[2] Schaich, F., Wild, T., Chen, Y. &Ag, A. Waveform contenders for 5G – suitability for short packet and low latency transmissions. (2014).
[3] Lema, M. A. et al. Business Case and Technology Analysis for 5G Low Latency Applications. 3536, 1–18 (2017).
[4] Schulz, P. et al. Latency Critical IoT Applications in 5G : Perspective on the Design of Radio Interface and Network Architecture. 70–78 (2017).
[5] Ishikawa, H. et al. Thermal stability of GaN on (111) Si substrate. 190, 178–182 (1998).
[6] Contreras, O., Bertram, F., Kohn, E. &Krost, A. MOVPE growth of GaN on Si (111) substrates. 248, 556–562 (2003).
[7] Pomeroy, J. W. et al. dimensional Raman thermography mapping Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping. 083513, (2014).
[8] Felbinger, J. G. et al. Comparison of GaN HEMTs on Diamond and SiC Substrates. 28, 948–950 (2007).
[9] Sun, H. et al. applications Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications. 111906, (2015).
[10] Gan, T. &Gan, H. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer. 316,
[11] Kozawa, T. et al. Thermal stress in GaN epitaxial layers grown on sapphire substrates. 4389, (2012).
[12] Novoselov, K. S. et al. Two-dimensional atomic crystals. 102, 10451–10453 (2005).
[13]Morozov, S.V et al. Strong Suppression of Weak Localization in Graphene. 016801, 7–10 (2006).
[14]Ponomarenko, L. A. et al. Chaotic Dirac Billiard in Graphene Quantum Dots. 356–358 (2008).
[15]Chandramohan, S. et al. Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx / Graphene Electrode. (2013).
[16] Yan, Z., Liu, G., Khan, J. M. &Balandin, A. A. of high-power GaN transistors. Nat. Commun. 3, 827–828 (2012).
[17] Raimond, J. M., Brune, M., Computation, Q., Martini, F.De &Monroe, C. Electric Field Effect in Atomically Thin Carbon Films. 306, 666–670 (2004).
[18] Pacilé, D., Meyer, J. C., Girit, Ç. Ö. &Zettl, A. The two-dimensional phase of boron nitride : Few-atomic-layer sheets and suspended membranes The two-dimensional phase of boron nitride : Few-atomic-layer sheets. 133107, 1–4 (2008).
[19] Graphene, E. et al. Electronic Confinement and. 312, 1191–1197 (2006).
[20] Heer, W. A.De et al. Epitaxial graphene. 143, 92–100 (2007).
[21] Tanaka, S., Morita, K. &Hibino, H. Anisotropic layer-by-layer growth of graphene on vicinal SiC ( 0001 ) surfaces. 2–5 (2010).
[22] Dikin, D. A. et al. Preparation and characterization of graphene oxide paper. 448, 457–460 (2007).
[23] Pei, S. &Cheng, H. The reduction of graphene oxide. Carbon N. Y. 50, 3210–3228 (2011).
[24] Chen, X. &Liu, Y. Chem Soc Rev Direct preparation of high quality graphene on dielectric substrates. Chem. Soc. Rev. (2016).
[25] Li, X., Cai, W., Colombo, L. &Ruoff, R. S. Evolution of graphene growth on Ni and Cu by carbon isotope labeling. Nano Lett. 9, 4268–4272 (2009).
[26] Manuscript, A. Ac ce d M us pt. (2018).
[27] Ru, M. H. et al. Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator. 4,
[28] Bhaviripudi, S., Jia, X., Dresselhaus, M. S. &Kong, J. Role of Kinetic Factors in Chemical Vapor Graphene Using Copper Catalyst. 4128–4133 (2010).
[29] Choi, J. et al. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition.
[30] Wei, D. et al. Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices ** Angewandte. 1–7 (2013).
[31] Juang, Z., Zhong, Y., Chen, F. &Li, L. Substrates by Chemical Vapor Deposition. 3612–3616 (2011).
[32] Suenaga, K. &Chiu, P. Remote Catalyzation for Direct Formation of Graphene Layers on Oxides. (2012).
[33] Kim, H. et al. Copper Vapor-Assisted Chemical Vapor Deposition for High Quality and Metal-Free Single Layer Graphene on Amorphous SiO2 Substrate. (2013)
[34]Wang, D. et al. Scalable and Direct Growth of Graphene Micro Ribbons on Dielectric Substrates. (2013).
[35]Dahal, A. &Batzill, M. Graphene-nickel interfaces: A review. Nanoscale 6, 2548–2562 (2014).
[36] Sung, C. &Taib, M. Reactivities of Transition Metals with Carbon : Implications to the Mechanism of Diamond Synthesis Under High Pressure. 15, 237–256 (1997).
[37] Zhang, Y. et al. Comparison of graphene growth on single-crystalline and polycrystalline Ni by chemical vapor deposition. J. Phys. Chem. Lett. 1, 3101–3107 (2010).
[38] Losurdo, M., Giangregorio, M. M., Capezzuto, P. &Bruno, G. Graphene CVD growth on copper and nickel : role of hydrogen in kinetics and structure. 20836–20843 (2011).
[39] Growth, L., Vapor, C., Using, D. &Sources, L. C. Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources. 3385–3390 (2011).
[40].Yao, M. et al. Transparent , superhard amorphous carbon phase from compressing glassy carbon. 021916, 0–4 (2014).
[41] Ahn, Y., Kim, J., Ganorkar, S., Kim, Y. &Kim, S. polymer residues. 6, 69–76 (2016).
[42] Sun, Z. et al. Growth of graphene from solid carbon sources. Nature 468, 549–552 (2010).
[43] Pham-huu, C., Banhart, F. &Rodrı, J. A. Graphene Growth by a Metal-Catalyzed Solid-State Transformation of Amorphous Carbon. 1529–1534 (2011).
[44] Recherches, C.De &Cedex, S. -350’c. 51, (1995).
[45] Zhuo, Q. et al. Transfer-Free Synthesis of Doped and Patterned Graphene Films. (2014).
[46] Juang, Z. et al. Synthesis of graphene on silicon carbide substrates at low temperature. Carbon N. Y. 47, 2026–2031 (2009).
[47] Escobedo-cousin, E. et al. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon. 114309, (2013).
[48]Kang, C. Y. et al. silicidation reactions Few-layer graphene growth on 6H-SiC (0001) surface at low temperature via Ni-silicidation reactions. 251604, 2010–2015 (2012).
[49]Machá, P., Fidler, T., Cicho, S. &Mi, L. Synthesis of graphene on SiC substrate via Ni-silicidation reactions. 520, 5215–5218 (2012).
[50] Calcagno, L. et al. Schottky-Ohmic transition in nickel silicide / SiC system : is it really a solved problem 436, 721–724 (2003).
[51] Search, H., Journals, C., Contact, A., Iopscience, M. &Address, I. P. Structural pattern formation in titanium – nickel contacts on silicon carbide following high-temperature. 898,
[52] You, A., Be, M. A. Y. &In, I. Metal-catalyzed crystallization of amorphous carbon to graphene. 063110, (2010).
[53] Hamilton, J. C. &Blakely, J. M. CARBON SEGREGATION co TO SINGLE CRYSTAL SURFACES OF Pt, Pd AND J.C. HAMILTON * and J.M. BLAKELY. 91, 199–217 (1980).
[54] Yu, Q. et al. Graphene segregated on Ni surfaces and transferred to insulators. Appl. Phys. Lett. 93, 1–4 (2008).
[55] Ischenko, V. &Woltersdorf, J. Oriented growth of silicide and carbon in SiC-based sandwich structures with nickel. 110, 303–310 (2008).
[56] Peng, Z., Yan, Z., Sun, Z. &Tour, J. M. Direct growth of Bilayer graphene on SiO2substrates by carbon diffusion through nickel. ACS Nano 5, 8241–8247 (2011).
[57] Murata, H., Toko, K., Saitoh, N., Yoshizawa, N. &Suemasu, T. Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon. Appl. Phys. Lett. 110, 1–5 (2017).
[58] Murata, H., Toko, K. &Suemasu, T. Multilayer graphene on insulator formed by Co- induced layer exchange. 1–5
[59] Murata, H., Saitoh, N., Yoshizawa, N., Suemasu, T. &Toko, K. induced layer exchange High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange. 243104, 3–7 (2017).
[60] Nast, O. et al. Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature. 3214, 1–4 (2006).
[61] Kwon, H., Ha, J. M., Yoo, S. H., Ali, G. &Cho, S. O. Synthesis of flake-like graphene from nickel-coated polyacrylonitrile polymer. 2, 1–6 (2014).
[62] Thompson, C.V. Solid-State Dewetting of Thin Films. (2012).
[63] [001] l Si-face [00i] I C-face. 48, 463–472 (1975).
[64] Tromp, R. M. &Hannon, J. B. Thermodynamics and Kinetics of Graphene Growth on SiC ( 0001 ). 106104, 1–4 (2009).
[65] Nie, S. H. U., Fisher, P. J., Feenstra, R. M., Gu, G. &Sun, Y. Temperature Dependence of Epitaxial Graphene Formation on SiC ( 0001 ). 38, 718–724 (2009).
[66] Diagram, E. The C-Si ( Carbon-Silicon ) System. 5, 161–162 (1984).
[67] Hannon, J. B. &Tromp, R. M. 1–4 (2008).
[68] Hass, J., Heer, W. A.De &Conrad, E. H. The growth and morphology of epitaxial multilayer graphene. 323202, (2008).
[69] Khan, A., Islam, S. M., Ahmed, S., Kumar, R. R. &Habib, M. R. Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates. (2018).
[70] Access, O. We are IntechOpen , the world ’ s leading publisher of Open Access books Built by scientists , for scientists TOP 1 %.
[71] Kuang, D., Xu, L., Liu, L., Hu, W. &Wu, Y. Applied Surface Science Graphene – nickel composites. Appl. Surf. Sci. 273, 484–490 (2013).
[72] Jabbar, A. et al. RSC Advances Electrochemical deposition of nickel graphene composite coatings : e ff ect of deposition temperature on its surface morphology and. RSC Adv. 7, 31100–31109 (2017).
[73] Haider, N. et al. Phonon thermal transport in 2H , 4H and 6H silicon carbide from fi rst principles. Mater. Today Phys. 1, 31–38 (2017).
[74] Hou, H. W., Liu, Z., Teng, J. H., Palacios, T. &Chua, S. J. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor. Nat. Publ. Gr. 3–8 (2017).
[75] Balandin, A. A. et al. Superior Thermal Conductivity of Single-Layer Graphene 2008. (2008).
[76] Tongay, S. et al. Rectification at Graphene-Semiconductor Interfaces : Zero-Gap Semiconductor-Based Diodes. 011002, 1–10 (2012).
[77] Z.Yan, G.Liu, J. M.Khan, andA. A.Balandin, “of high-power GaN transistors,” Nat. Commun., vol. 3, no. May, pp. 827–828, 2012.
[78] Q. H.Ta et al., “Probing graphene grain boundaries with,” Nature, vol. 490, no. 7419, pp. 235–239, 2012.
[79] K.Chung, “No Title,” vol. 655, no. 2010, 2014.
[80] X.Lu et al., “Patterning of highly oriented pyrolytic graphite by oxygen plasma etching Patterning of highly oriented pyrolytic graphite by oxygen plasma etching,” vol. 193, no. 1999, pp. 10–13, 2013.
[81] P.Gupta et al., “Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers,” vol. 181108, 2013.
[82]J.Kim et al., “single-crystalline films on epitaxial graphene,” Nat. Commun., vol. 5, pp. 1–7, 2014.
[83] Z. H.Ni et al., “Raman spectroscopy of epitaxial graphene on a SiC substrate,” pp. 1–6, 2008.
[84]J. A.Phys et al., “Ultraviolet Raman microscopy of single and multilayer graphene,” vol. 043509, no. July, 2009
[85] Z.Tu et al., “Controllable growth of 1 – 7 layers of graphene by chemical vapour deposition,” Carbon N. Y., vol. 73, pp. 252–258, 2014.
[86] Y.Hao et al., Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy , pp. 195–200, 2010.
[87] H.Wang, Y.Wang, X.Cao, andG.Lan, “Vibrational properties of graphene and graphene layers.”
[88] F.Tuinstra andJ. L.Koenig, “Raman Spectrum of Graphite Raman Spectrum of Graphite,” vol. 1126, no. 1970, 2012.
[89] L. G.Cançado et al., “General equation for the determination of the crystallite size La of nanographite by Raman spectroscopy General equation for the determination of the crystallite size L a of nanographite by Raman spectroscopy,” vol. 163106, pp. 1–4, 2006.
[90] H.Hu, S.Zhou, X.Liu, Y.Gao, C.Gui, andS.Liu, “Effects of GaN / AlGaN / Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes,” Nat. Publ. Gr., no. March, pp. 1–10, 2017.
[91] W.Ke et al., “Applied Surface Science Epitaxial growth and characterization of GaN thin films on graphene / sapphire substrate by embedding a hybrid-AlN buffer layer,” Appl. Surf. Sci., vol. 494, no. July, pp. 644–650, 2019