化學機械拋光（Chemical Mechanical Polishing, CMP）是半導體製造中最關鍵的製程且廣泛應用。了解拋光墊與晶圓接觸的機械相互作用以及晶圓表面的化學變化對於CMP製程的材料去除機制至關重要。本研究主要探討銅在拋光液中奈米力學性質的變化，並將奈米刮痕硬度納入CMP材料移除的建模。本研究之材料移除解析法是基於化學反應後表面之機械材料磨耗和根據腐蝕理論的化學溶解，該材料移除模型與CMP狀態下銅薄膜晶圓的拋光墊性能和刮痕硬度成函數關係，並結合了對材料去除的機械和化學影響。磨料和晶圓之間的接觸被建模為滑動壓痕，拋光墊和磨料之間的接觸被認為準靜態壓痕。藉由使用 Hysitron TI 980 Triboindenter 進行奈米壓痕試驗來測試拋光墊和銅膜在拋光液鈍化的機械性能。在潮濕環境中對銅薄膜晶圓樣品進行恆定負載模式和斜坡負載模式的奈米劃痕實驗。本研究中用商用塊狀銅薄膜晶圓和(111)奈米雙晶銅晶圓在實驗研究和CMP建模。開發了一個考量到彈性恢復的奈米刮痕硬度模型，用於恆定附載模式以評估銅薄膜的刮痕硬度。X 射線光電子能譜分析(X-ray photoelectron spectroscopy, XPS)是用以表示濕式環境中銅薄膜表面的鈍化層，而拋光墊表面形貌結構是透過雷射共軛焦顯微鏡進行分析。根據拋光墊表面的線性面材料比曲線參數，提出了晶圓拋光墊接觸閥值。這項研究建立了拋光墊與晶圓特性及奈米級接觸模型假設內的材料去除之間的相關性。最後，在 Matlab AppDesigner中開發了一個使用者介面（GUI），用於銅CMP製程的材料移除率預測，該模型為優化CMP參數提供了理論和實驗的結合，可用於開發CMP模擬軟體系統來分析先進半導體的銅晶圓拋光製程。

Chemical mechanical polishing (CMP) is the most crucial process for semiconductor fabrication with wide applications recently. Understanding the varied mechanical interaction at contact or engaged area between polishing pad-wafer as well as chemical alteration of wafer surface is essential to comprehend the mechanism of material removal in CMP process. This dissertation aims to investigate the change in nanomechanical properties and nano scratch hardness of copper in slurry conditions and incorporate them into modeling the material removal rate (MRR) in CMP. In this study, an analytical material removal model based on mechanical material wear of chemically passivated surface and corrosion theory-based chemical dissolution of copper thin film has been established as a function of polishing pad properties and nano scratch hardness of copper thin film wafer in CMP conditions. The model incorporates both mechanical and chemical effects on material removal. The contact between abrasive and wafer is modeled as a sliding indentation of a half-space and the contact between polishing pad and abrasive is considered to be a quasi-static indentation of a half-space. The mechanical properties of the polishing pad and copper thin film wafer with passivation in slurry conditions are examined by nanoindentation testing with Hysitron TI 980 Triboindenter. Nano scratch experiments in constant load mode, as well as ramp load mode, have been performed on copper thin film wafer specimens. Commercially available silicon coupon wafer with copper thin film and (111) nanotwinned copper thin film specimens are implemented for experimental investigation and CMP modeling in this research. An explicit nano scratch hardness model with consideration of elastic recovery has been developed for constant load mode scratching to access the nano scratch hardness of copper thin film. X-ray photoelectron spectroscopy (XPS) analysis is carried out to characterize the passivated layer on copper thin film surface in wet environments. The surface topography of polishing pad is analyzed by laser confocal microscope. The wafer-polishing pad contact threshold is proposed based on the linear areal material ratio curve parameters of the polishing pad surface. Results of this study establish a strong correlation between the experimentally measured polishing pad, wafer properties, and MRR of CMP within the nanoscale contact model assumptions. Furthermore, a graphical user interface (GUI) has been developed in Matlab AppDesigner for the MRR prediction for copper CMP. The model provides a theoretical and experimental framework for optimizing the CMP process parameters, which can be employed to develop a simulator to analyze and optimize the advanced node copper CMP for high volume production of IC devices.

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