研究生: |
柯彥竹 Yen-Chu Ko |
---|---|
論文名稱: |
硒化銦摻鎵層狀半導體之光學特性研究 Study of optical properties of gallium-incorporated InSe layer crystal |
指導教授: |
何清華
Ching-Hwa Ho |
口試委員: |
周宏隆
Hung-Lung Chou 李奎毅 Kuei-Yi Lee 簡紋濱 Wen-Bin Jian 何清華 Ching-Hwa Ho |
學位類別: |
碩士 Master |
系所名稱: |
應用科技學院 - 應用科技研究所 Graduate Institute of Applied Science and Technology |
論文出版年: | 2020 |
畢業學年度: | 108 |
語文別: | 中文 |
論文頁數: | 115 |
中文關鍵詞: | 拉曼光譜 、調製光譜 、三六族層狀晶體 、化學氣相傳導法 、二維半導體 、光電導 |
外文關鍵詞: | Raman Scattering, Modulation spectroscopy, III-VI layer compounds, CVT, 2D semiconductors, Photoconductivity |
相關次數: | 點閱:276 下載:0 |
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[1] McCanny J. V.; Murray R. B., ‟The band structures of gallium and indium selenide”, J. Phys. C: Solid State Phys., 1977, 10, 1211.
[2] Segura A.; Guesdon J. P.; Besson J. M.; Chevy A., ‟Photovoltaic effect in InSe - Application to solar energy conversion”, Rev. Phys. Appl., 1979, 14, 253-257.
[3] Segura A.; Chevy A.; Guesdon J. P.; Besson J. M., ‟Photovoltaic efficiency of InSe solar cells”, Sol. Energy Mater., 1979, 2, 159-165.
[4] Hasegawa Y.; Abe Y., ‟Electrical and optical characteristics of a schottky barrier on a cleaved surface of the layered semiconductor InSe”, Phys. Status Solidi A, 1982, 70, 615-621.
[5] Di Giulio M.; Micocci G.; Rizzo A.; Tepore A., ‟ Photovoltaic effect in gold‐indium selenide Schottky barriers”, J. Appl. Phys., 1983, 54, 5839-5843.
[6] Budiman M.; Okamoto T.; Yamada A.; Konagai M. J., ‟Heteroepitaxy and multiquantum well structure of layered compound GaSe/GaSxSe1-x on (001) GaAs substrate”, Jpn. J. Appl. Phys., 1998, 37, 5497-5499.
[7] R.M.A. Lieth (ed.), ‟Preparation and crystal growth of materials with layered structures”, Springer Science & Business Media, 1977.
[8] Ikari T.; Shigetomi S.; Hashimoto K., ‟ Crystal structure and Raman spectra of InSe”, Phys. Status Solidi, 1982, 111, 477-481.
[9] Yu M.; Hu Y.; Gao F.; Dai M.; Wang L. ; Hu P.; Feng W., ‟High-performance devices based on InSe-In1-xGaxSe van der Waals heterojunctions”, ACS Appl. Mater. Interfaces, 2020, 12, 24978-24983.
[10] De Blasi C.; Manno D.; Rizzo A., ‟Study of the polytypism in melt grown InSe single crystals by convergent beam electron diffraction”, J. Cryst. Growth, 1990, 100, 347-353.
[11] Ulrich C.; Olguin D.; Cantarero A.; Goni A.; Syassen K.; Chevy A., ‟Effect of Pressure on Direct Optical Transitions of γ‐InSe”, Phys. Status Solidi, 2000, 221, 777-787.
[12] Piacentini M.; Doni E.; Girlanda, R.; Grasso V.; Balzarotti A., ‟Electronic properties of the III-VI layer compounds GaS, GaSe and InSe”, Ⅱ Nuovo Cimento B, 1979, 54, 269-293.
[13] Yang Z.; Jie W.; Mak C.H.; Lin S.; Lin H.; Yang X.; Yan F.; Lau S. P.; Hao J., ‟Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse”, ACS Nano, 2017, 11, 4225-4236.
[14] Allakhverdiev K.; Ellialtioglu S.; Ismailov A.; Ibragimov Z., ‟Raman scattering and Hall effect in layer InSe under pressure”, High Press. Res., 1994, 13, 121-125.
[15] Schäfer H., ‟Chemical transport reactions”, Elsevier, 1964.
[16] 許樹恩、吳泰伯, ‟X光繞射原理與材料結構分析”,中國材料科學學會, 1996.
[17] 柯宗佑, ‟二硒化鉬鎢層狀半導體之晶體成長與光學特性研究”, 國立台灣科技大學學位論文, etd-0626114-160346, 2014.
[18] Beiser A., ‟Concepts of modern physics”, McGraw-Hill Education (India) Pvt Limited, 2003.
[19] Seraphin B. O.; Hess R. B.; Bottka, N., ‟ Field effect of the reflectivity in Germanium”, J. Appl. Phys., 1965, 36, 2242-2250.
[20] Pollak F. H.; Shen H., ‟Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices”, Mater. Sci. Eng. R Rep., 1993, 10, 275-374.
[21] Mathieu H.; Allegre J.; Gil B., ‟Piezomodulation spectroscopy: A powerful investigation tool of heterostructures”, Phys. Rev. B, 1991, 43, 2218-2227.
[22] Ho C. H.; Lee H. W.; Cheng Z. H., ‟Practical thermoreflectance design for optical characterization of layer semiconductors”, Rev. Sci. Instrum., 2004, 75, 1098-1102.
[23] A.L.E.F. Schleiermacher, ‟On the termal conduction of gas”, Wiedeman Ann Phys., 1888, 34, 623-646.
[24] Axelevitch A.; Golan G., ‟Hot-probe method for evaluation of majority charged carriers concentration in semiconductor thin films”, Electronics and Energetics, 2013, 26, 187-195.
[25] Errandonea D.; Martínez-García D.; Segura A.; Haines J.; Machado-Charry E.; Canadell E.; Chervin J. C.; Chevy, A., ‟High-pressure electronic structure and phase transitions in monoclinic InSe: X-ray diffraction, Raman spectroscopy, and density functional theory”, Phys. Rev. B, 2008, 77, 045208.
[26] Ho C. H.; Wang S. T.; Huang Y. S.; Tiong K. K., ‟Structural and luminescent property of gallium chalcogenides GaSe1− x Sx layer compounds”, J. Mater. Sci. Mater. Electron., 2009, 20, 207-210
[27] Ho C. H.; Chu Y. J., ‟Bending photoluminescence and surface photovoltaic effect on multilayer InSe 2D microplate crystals”, Adv. Opt. Mater., 2015, 3, 1750-1758.
[28] Ho C. H., ‟Thickness-dependent carrier transport and optically enhanced transconductance gain in III-VI multilayer InSe”, 2D Mater., 2016, 3, 025019.
[29] Jandl S.; Carlone C., ‟Raman spectrum of crystalline InSe”, Solid State Commun., 1978, 25, 5-8.
[30] Faradev F. E.; Gasanly N. M.; Mavrin B. N.; Melnik N. N., ‟Raman scattering in some III‐VI layer single crystals”, Phys. Status Solidi, 1978, 85, 381-386.
[31] Varshni Y. P., ‟Temperature dependence of the energy gap in semiconductors”, Physica, 1967, 34, 149-154.
[32] Fischer G.; Brebner J. L., ‟Electrical resistivity and Hall effect of single crystals of GaTe and GaSe”, J Phys Chem Solids, 1962, 23, 1363-1370.
[33] Ho C. H., ‟Ga2Se3 defect semiconductors: The study of direct band edge and optical properties”, ACS Omega, 2020.