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研究生: 柯彥竹
Yen-Chu Ko
論文名稱: 硒化銦摻鎵層狀半導體之光學特性研究
Study of optical properties of gallium-incorporated InSe layer crystal
指導教授: 何清華
Ching-Hwa Ho
口試委員: 周宏隆
Hung-Lung Chou
李奎毅
Kuei-Yi Lee
簡紋濱
Wen-Bin Jian
何清華
Ching-Hwa Ho
學位類別: 碩士
Master
系所名稱: 應用科技學院 - 應用科技研究所
Graduate Institute of Applied Science and Technology
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 115
中文關鍵詞: 拉曼光譜調製光譜三六族層狀晶體化學氣相傳導法二維半導體光電導
外文關鍵詞: Raman Scattering, Modulation spectroscopy, III-VI layer compounds, CVT, 2D semiconductors, Photoconductivity
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中文摘要........................................................I Abstract.......................................................III 致謝...........................................................V 目錄...........................................................VI 圖目錄.........................................................IX 表目錄.........................................................XV 第一章 緒論..................................................1 第二章 硒化銦摻鎵之晶體成長....................................4 2.1. 晶體成長方法............................................4 2.2. 晶體成長設備介紹.........................................6 2.2.1. 高真空系統............................................6 2.2.2. 長晶反應系統..........................................6 2.3. 晶體成長...............................................10 第三章 實驗原理與量測系統.....................................12 3.1. X射線能量散佈分析儀(EDS)................................13 3.2. X-ray晶格繞射分析儀(XRD)................................15 3.3 拉曼散射光譜(Raman).....................................18 3.4 光激發螢光光譜量測(PL)...................................22 3.4.1 光激發螢光光譜原理.....................................22 3.4.2 PL 實驗方法與系統架構..................................24 3.5 調制光譜簡介和系統概論...................................27 3.5.1 熱調制簡介............................................27 3.5.2 熱調制反射光譜量測.....................................29 3.5.2.1. 樣品製備之方式......................................29 3.5.2.1 熱調制光譜實驗的儀器架設流程..........................30 3.6 照光之電壓電流量測(Photo V-I)............................34 3.6.1 樣品備製..............................................34 3.6.2 電阻率之量測與計算.....................................34 3.7 熱探針實驗(Hot Probe)...................................36 3.8 光電導量測(PC)..........................................37 3.8.1 光電導原理............................................37 3.8.2 樣品製備及架構圖.......................................38 第四章 硒化銦摻鎵InxGa1-xSe之光電特性.........................41 4.1 晶格結構與型態..........................................41 4.2 X-ray 晶格繞射分析結果...................................44 4.3 拉曼散射分析結果.........................................48 4.4 光激發螢光量測結果分析....................................55 4.5 熱調制光譜 (Thermoreflectance)..........................63 4.6 照光電壓-電流 (Photo V-I)................................74 4.7 熱探針 (Hot probe)......................................80 4.8 光電導 (Photoconductivity).............................84 第五章 結論................................................ 92 參考文獻.......................................................94

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