本論文使用磁控式濺鍍系統沈積為薄膜生成的主要製程，結合製程技術快速且低氧化溫度之電漿氧化製程，製備本實驗所需之太陽能選擇性吸收膜，並探討其吸收膜之光學性質及結晶結構。第一部份實驗為沈積一層Cu薄膜在不鏽鋼基材與石英玻璃上，電漿氧化處理成CuO-Cu2O-Cu之吸收膜後，利用XRD量測確認成份，並討論氧化溫度及薄膜厚度對Cu薄膜組成之變化與光學性質。第二部份則沈積一層Cu-Si複合薄膜在不鏽鋼基材與石英玻璃上，電漿氧化處理成Cu-SiO2複合吸收膜後，利用UV-Vis-NIR吸收光譜確認Cu的狀態變化，並討論表面結構、SPR特性及覆蓋一層SiO2抗反射層對Cu-SiO2複合吸收膜組成之變化與光學性質。
本實驗利用X光繞射分析儀量測分析吸收膜組成成份與相變化，利用場發射掃瞄式電子顯微鏡分析觀察吸收膜表面型態結構、晶粒大小與表面粗糙度，利用紫外光-可見光-近紅外光光譜分析儀，及傅立葉轉紅外線光譜分析儀測量吸收膜的光學性質。
實驗結果Cu薄膜部份顯示光學性質並不如預期的，原因一是因為成份大多為Cu2O之氧化物，因Cu2O具有較寬能隙(Eg)約為2.2 eV，要有較高的太陽光吸收度(α)要有非常厚之厚度，且會有一定的熱發射率(ε)；二是CuO(Eg=1.1 eV)之氧化層厚度不夠，此結果造成Cu薄膜之α值不能達一般要求，此部份目前最佳參數為薄膜厚度2 µm，其α為0.71、ε為0.08。Cu-Si複合薄膜部份則顯示其光學性質要來得比Cu薄膜好很多，原因一是成份比例控制合宜穩定；二是表面晶粒大小使得SPR特性有所提升，此部份本實驗目前的最佳參數，又分為一是薄膜厚度100 nm未覆蓋SiO2抗反射層，其α為0.82、ε為0.22，二是薄膜厚度100 nm並覆蓋SiO2抗反射層，其α為0.89、ε為0.35。

This thesis uses the magnetron sputter to deposit prime film, and combine with low-temperature plasma oxidation process, to produces solar energy selective absorbers, and then probe optical characteristic and crystal structure of absorbers. The first part of study included deposition a Cu film on stainless steel and quartz glass, plasma oxidation to form the CuO-Cu2O-Cu absorbers. The second part of study included deposition Cu-Si composite films on stainless steel and quartz glass, plasma oxidation to form the Cu-SiO2 composite absorbers, and examination of surface structure, and SPR characteristic. Furthermore a SiO2 anti-reflective(AR) layer was covered on Cu-SiO2 composite absorbers to improve properties of solar selective absorbers. XRD, SEM, UV-Vis-NIR, and FTIR were utilized to analysis solar spectrally selective absorbers.
The results indicated that the part of oxidized Cu film does not exhibit to good optical characteristic as expected. The oxidized Cu films contained excess Cu2O oxide but few CuO. Cu2O has a band gap(Eg) of 2.2 eV, in order to form high solar absorptance(α), it must have enough thickness which yields a certain thermal emittance(ε). Optimum parameter of film thickness of Cu is 2 µm, and α is 0.71, ε is 0.08 for the solar absorber made by oxidizing Cu films. Solar absorber properties of Cu-Si composite film are best than those of Cu film. The Cu-Si composite with a film thickness of 100 nm, and without a SiO2 AR layer, has an α of 0.82, and an ε of 0.22, after oxidztion process. The oxidized Cu-Si film with a SiO2 AR layer, has an α of 0.89, and an ε of 0.35.

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