本研究係用射頻電漿系統沉積氫化非晶矽薄膜，調變製程重要參數如氫氣稀釋比、基材溫度、工作壓力以及電極間距等，藉由傅立葉轉換紅外光光譜儀(FT-IR)以及紫外光/可見光光譜儀(UV-VIS)等分析方法，探討成長出的氫化非晶矽膜的微結構參數和B值(Tauc公式的斜率)對製程參數的對應關係，並嘗試解釋氫化非晶矽膜的光暗導電率變化關係。實驗結果發現，薄膜的光敏感度量測確實會受到微結構參數與B值之影響。因此，本研究藉由觀測微結構參數以及B值的變化，調配出最適之反應條件，此條件擁有較低的微結構參數為0.08以及較大的B值為1100，且其光敏感度可高達2.63×10^5。

The hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by radio-frequency plasma enhanced chemical vapor deposition in this thesis. The a-Si:H thin films were prepared under different experimental parameters, such as hydrogen dilution ratio, substrate temperature, working pressure and electrode gap. The microstructure factor and B value (gained from the slope of Tauc formula) of a-Si:H were acquired respectively by using Fourier transform infrared spectrometer and ultraviolet-visible spectrophotometer. We tried to explain the photoelectrical properties of a-Si:H by micorstructure and B value. It was revealed that photoelectric characteristics were indeed influenced by microstructure and B value. Finally, by altering the deposition condition, the best operating condition which author found possessing a lower microstructure value of 0.08 and a higher B value of 1100, what is more, a photosensitivity can be achieved as high as 2.63×10^5.

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