本論文是探討In-InSe異質結構奈米線的成長機制及製備InSe奈米線之光感測元件。首先，此兩種奈米線皆以真空液壓鑄造方式製備，前驅物材料為不同比例之銦-硒系統金屬硒化物粉體，經均混後置於真空封口之石英管中，再將其高溫熔煉至銦-硒系統之塊材。真空液壓鑄造製程需搭配多孔性之陽極氧化鋁為輔助模板，輔助模板是使用直徑為4公分，厚度為1 毫米的5 N金屬圓形鋁片進行電化學陽極氧化處理，電解液為3 wt.% 草酸、電壓為40 V，陽極處理的過程維持24小時，氧化層的厚度大約可以長到40 μm，孔徑大約100 nm 。
第一部分為多孔性陽極氧化鋁板的製作，氧化鋁板可以直接控制奈米線的直徑並且製造出高度序化奈米陣列之奈米線。 將偏晶組份之In0.7Se0.3塊材加熱到熔點溫度之上(550 °C)，藉由真空液壓鑄造製程將材料壓進陽極氧化鋁版中，使用蝕刻液將氧化鋁版移除。利用掃描式電匙顯微鏡(Scanning Electron Microscope)及能量色散X射線光譜儀(Energy-Dispersive X-ray Spectroscopy)來確認In0.7Se0.3 塊材組份和In-InSe異質結構奈米線分段的組份分析表面型態、直徑及長度。透過穿透式顯微鏡(Transmission Electron Microscope )來觀察異質接面處的原子結構及磊晶的關係。 
第二部分為InSe奈米線微結構分析和光電感測器之電性量測。真空液壓製程的操作溫度為700 °C，因為InSe有比較高的熔點(630 °C)，合成後InSe奈米線利用掃描式電子顯微鏡及能量色散X射線光譜儀確認奈米線長度為10~20 μm，線的直徑大約70~100 nm，奈米線直徑符合陽極氧化鋁模板的孔徑大小，透過拉曼光譜來分析InSe奈米線聲子震動強度﹔X光射線繞射分析其結構及是否有多餘的相產生。將合成後的InSe奈米線滴在鍍有鉑電極的矽基板上，再利用聚焦離子束(Focused Ion Beam)在InSe奈米線兩端鍍上金屬鉑與基板電極接觸，製成InSe奈米線光電感測元件。量測條件，電壓 (Vd = 5 V)、功率1.25 mW/cm2，比較有、無照光的情況下電流的差異，開關轉換比達到15.8，使用不同波長的光源計算出光感測率、檢測率、及EQE %的數值，光源波長範圍落在紫外光和可見光及紅外光範圍( 405、450、532、685、785 nm)，而在波長405 nm照光下有著極高的光電感測率1463 A/W。再以相同波長下比較不同功率，算出每一個波長的powder law (I∝Pα )，經過計算後α≈ 0.4，這意味著雖然隨著功率降低電流會跟著減少，但是會有較高的光電感測率是因為光載子生成的速率會降低，使載子複合速率跟著降低在較低的功率下。

In this thesis, it investigates that In-InSe heterostructure nanowires and electrical and a photodetector measurements of InSe nanowires. First these two type of nanowires are fabricated by vacuum hydraulic pressure injection process with anodic aluminum oxide (AAO) template, the material precursor of different proportions of In-Se system mixed selenide powders are configured sealing in a quartz tube, then melting the powders to InSe as-bulk. The vacuum hydraulic pressure injection process needs to be matching with the porous anodized aluminum as an auxiliary template which is anodized using a 5 N round aluminum metal piece with a diameter of 4.0 cm and a thickness is 1.0 mm. The electrolyte is 3 wt.% oxalic acid, the voltage is 40 V, and the anodizing process is maintained for 24 hours. The thickness of the oxide layer can be as long as 40 μm and the pore size is about 100 nm.
In the first part, the self- made porosity AAO template, the assist plate can directly control the diameter of the nanowire to produce highly ordered nano-array. The In0.7Se0.3 bulk material of the monotectic component is heated up to the melting point temperature (550 °C), then the material is pressed into the AAO template by vacuum hydraulic pressure injection process, then the template is removed using an etching solution. Various characteristics were analyzed by SEM equipment, such as morphology, diameter and length of InSe nanowires, the component In-InSe bulk and heterostructure of NWs are analyzed by energy-dispersive X-ray spectroscopy (EDS). The transmission electron microscope (TEM) can study the relationship of atomic structure and epitaxy at the heterojunction.
The second part is the analysis of the InSe NWs microstructure and the measurement of photodetector. The operating tempurature of vacuum hydraulic die-casting operating tempurature is 700 °C, because InSe has a relativly high melting point (630 °C), synthesized InSe nanowires use a SEM and EDS to conform that the nanowire length 10-20 μm and the diameter of the NWs are approximately 70~100 nm. The diameter of the NWs is in accordance with the pore size of the AAO template. The phonon vibration intensity of the InSe nanowire is analyzed by Raman spectroscopy; the X-ray ( XRD diffraction is used to analyze the structure and whether there are excess phases. The synthesized InSe nanowires are dropped on a Si substrate plated with a platinum electrode, and then metal platinum is plated on both ends of the InSe nanowire with a focused ion beam (FIB) to contact the substrate electrode. The photosensing property of InSe device was measured under laser power of 1.25 mW/cm2 at drain voltage of 5 V.. Compare with dark current and photocurrent, the ON/OFF ratio is 15.8. The responsivity (R), detectivity (D*), and external quantum efficiency (EQE) % are calculated using light sources of different wavelengths. The wavelength range of the light source falls in the range of ultraviolet, visible and infrared light (405, 450, 532, 685, 785 nm). It has a high responsivity of 1463 A/W under the wavelength of 405 nm irradition, Comparing different powers at the same wavelength, the powder law (I∝Pα ) for each wavelength, after calculation, α ≈ 0.4, which means that the current will decrease with the power reduction, but there will be a higher responsivity measurement. The rate is due to the lower rate of photon generation, which causes the carrier recombination rate to be reduced at lower power.
 

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