在RF射頻收發機中，頻率合成器的特性非常重要，內部包含了相位偵測器(PFD)、充電幫浦(CP)、迴路濾波器(LF)、壓控振盪器(VCO)、除頻器(FD)，而這其中又以壓控振盪器和注入鎖定除頻器特性為主要電路。壓控振盪器需要低相位雜訊來避免相鄰雜訊訊號經由混波轉換的干擾，壓控振盪器的輸出在經由除頻器來達到降頻的工作，因此除頻器必須具有高的操作頻寬與頻率。本篇論文提出各兩種不同的除頻器與振盪器。
首先，本論文提出一個台積電矽鍺0.18微米製程之寬除頻範圍除六注入鎖定除頻器，此除頻器使用p-core除二注入鎖定除頻器疊接n-core除三電容交叉耦合式注入鎖定除頻器所構成，除二與除三除頻器皆做為線性混波器之用。功率消耗為9.396mW，注入訊號強度為0dBm，可提供一個2.04GHz的鎖定頻寬，鎖定頻率從7.72GHz到9.76GHz，晶片面積為0.927x1.092 mm2.
其次，本篇探討一個使用台積電0.18微米製程的四相位除二除頻器，注入功率從-21dBm~12dBm，並採用互感耦合訊號達到四相位輸出，此電路有兩個沒有重疊的鎖定範圍，若給較高注入功率或是高注入偏壓，晶片在低頻時會沒辦法正常運作。
第三，本篇提出一個穩懋氮化鎵 0.25微米製程的振盪器並具有兩倍頻輸出，此電路採用兩個單端輸出的振盪器來產生差動輸出，並使用互感回授使其產生振盪，利用調整閘極與汲極的偏壓來改變振盪頻率與相位雜訊基頻為4.3GHz二次諧振為8.6GHz，期相位雜訊在1MHz時為-119.1dBc/Hz，功耗為98mW.晶片面積為2x1 mm2。
最後，篇提出一個穩懋氮化鎵 0.25微米製程的振盪器並具有三倍頻輸出，此電路使用3個GaN HEMT放大器組成一個環型振盪器，三次諧振頻率為7.6GHz，相位雜訊再1MHz為-114.28dBc/Hz，功率消耗為386.456mW，晶片面積為2x1 mm2。

In the RF transceiver, Frequency synthesizer is very important, its blocks include Phase Frequency Detector (PFD), Charge Pump (CP), Loop Filter (LF),Voltage Controlled Oscillator (VCO), and Frequency Divider (FD), In order to pursue low-power, low phase noise, wide Locking range, the most important characteristics of performance are VCO and Divider,this thesis presents the design of voltage-controller oscillator (VCOs) and Injection-Locked Frequency Dividers (ILFDs).

First, this thesis proposes a wide locking range ÷6 ILFD designed in the TSMC 0.18 μm BiCMOS process. The proposed current-reused ILFD is based on a low-frequency ÷2 p-core LC ILFD stacking on a high-frequency ÷3 n-core capacitive cross-coupled LC ILFD. Injection MOSFETS in ÷2 and ÷3 ILFDs are used as linear mixers. The injection signal is applied to the ÷3 ILFD first and the output is measured at ÷2 ILFD output. At power consumption Pdisp=9.396 mW, an external injected signal power of 0 dBm provides a locking range 2.04 GHz from 7.72 GHz to 9.76 GHz. The die area is 0.927 ×1.092 mm2.

Secondly, we study a divide-by-2 transformer-coupled quadrature injection-locked frequency divider (QILFD) subject to injection power -21 dBm to 12 dBm. The ILFD consists of a transformer-coupled quadrature voltage controlled oscillator (QVCO) and two injection FETs, which are in parallel with the QVCO resonators for signal injection. The proposed CMOS ILFD has been implemented with the TSMC 0.18-μm CMOS technology. The QILFD has two non-overlapped locking ranges, the low-band locking range disappears at high injection power and high injection gate bias. The phase noise of the locked output spectrum is lower than that of free running QILFD in the 2 mode.

Thirdly, this thesis designs a 0.25 μm GaN HEMT oscillator outputting a useful 2nd harmonic. The oscillator uses single-ended sub-oscillators configured in a balanced topology. The sub-oscillator uses transformer to provide output-to-input feedback to start the oscillation. The common nodes of the two sub-oscillators are virtual ground for the fundamental signals and provide outputs at the 2nd harmonic. The die area of the GaN HEMT oscillator is 2×1 mm2. The gate and drain biases are used to tune the oscillation frequency, they affect the low-frequency drain and gate current noises and phase noise of oscillator. The fundamental signal is at 4.3 GHz and the second harmonic signal is at 8.6 GHz. The phase noise is -119.1 dBc/Hz at the offset frequency of 1 MHz from the carrier at 8.62 GHz at the power consumption of 98 mW.

Finally, we present a 0.25 μm GaN HEMT ring oscillator outputting a useful 3rd harmonic. The triple-push oscillator uses three HEMT amplifiers configured in a ring.The die area of the triple-push oscillator is 2×1 mm2. The gate and drain biases are used to tune the oscillation frequency. The third harmonic signal is at 7.6 GHz. The phase noise of -114.28 dBc/Hz at the offset frequency of 1 MHz from the carrier at 7.6 GHz at the power consumption of 386.456mW.

[1]B. Razavi, RF Microelectronics, Prentice Hall PTR, 1998.
[2]S. Smith, Microelectronic Circuit 4th edition, Oxford University Press 1998.
[3]J. Roggers, C. Plett, Radio frequency integrated circuit design, Artech House, 2003.
[4]N. M. Nguyen and R. G. Meyer, “Start-up and frequency stability in high-frequency oscillators,” IEEE J. Solid-State Circuit, vol. 27, no. 5, pp. 810-820, May 1992.
[5]B. Razavi, Design of integrated circuits for optical communications, Mc Graw Hill.
[6]B. Razavi, Design of analog CMOS integrated circuits, Mc Graw Hill, 2001.
[7] S.J. Lee, B. Kim, K. Lee, “A novel high-speed ring oscillator for multiphase clock generation using negative skewed delay scheme,” IEEE Journal of Solid-State Circuits, vol. 32, No. 2, February 1997.
[8] G. Gonzalez, “Microwave Transistor Amplifiers Analysis and Design”, Prentice Hall, 1997.
[9] 劉隽宇, 翁若敏, 運用於IEEE 802.11a CMOS 頻率合成器的低雜訊寬調變範圍之壓控振盪器, 2005.07.
[10] A. Hajimiri and T. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179–194, Feb. 1998.
[11] A. Hajimiri, and T. H. Lee, The design of low noise oscillators, Kluwer Academic Publishers, 1999.
[12] B. De Muer, M. Borremans, M.Steyaert, and G. Li Puma, “A 2GHz low-phase-noise integrated LC-VCO set with flicker-noise up-conversion minimization,” IEEE J. Solid-State Circuits, vol. 35, pp. 1034-1038, 2000.
[13] S. Levantino, C. Samori, A. Bonfanti, S.L.J. Gierkink, A.L. Lacaita, and V. Boccuzzi, “frequency dependence on bias current in 5 GHz CMOS VCOs: impact on tuning range and flicker noise up-conversion,” IEEE J. Solid-State Circuits, vol. 37, pp. 1003-1001, 2002.
[14] T. H. Lee, The Design of CMOS Radio Frequency Integrated Circuits, Cambridge University Press 1998.
[15] H. M. Greenhouse, “Design of planar rectangular microelectronic inductors,” IEEE Transactions on Parts, Hybrids, and Packaging, vol. 10, pp. 101-109,Jun 1974.
[16] J. Savoj, B. Razavi, High-speed CMOS circuits for optical Receivers, Kluwer Academic Publishers, 2001.
[17] Kenichi Okada and Kazuya Masu, “Modeling of spiral inductors,” Advanced Microwave Circuits and System, Vitaliy Zhurbenko (Ed.), InTech, 2010.
[18] E. Frlan, S. Meszaros, M. Cuhaci, and J.Wight, “Computer-aided design of square spiral transformers and inductors,” in Proc. IEEE MTT-S, pp. 661-664, June 1989.
[19] P. Andreani, S. Mattisson, “On the use of MOS varactors in RF VCOs,” IEEE Journal of Solid-State Circuits, vol. 35, no. 6, pp. 905-910, June 2000.
[20] A. Hajimiri and T. H. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179–194, Feb. 1998.
[21] A. Zolfaghari, A. Chan, and B. Razavi, “Stacked inductors and transformers in CMOS technology,” IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 620-628, April 2001.
[22] C. P. Yue, C. Ryu, Jack Lau, T. H. Lee, and S. Wong, “A physical model for planar spiral inductors on silicon,” 1996 International Electron Devices Meeting Technical Digest, pp. 155–158, Dec. 1996.
[23] D. Leeson, “A simple model of feedback oscillator noise spectrum,” Proceedings of the IEEE, vol. 54, pp. 329–330, Feb. 1966.
[24] H. D. Wohlmuth and D. Kehrer, “A high sensitivity static 2:1 frequency divider up to 27 GHz in 120 nm CMOS,” IEEE European Solid State Circuits Conference (ESSCIRC), pp. 823-826, Sept. 2002.
[25] M. Tiebout, “A 480 uW 2 GHz ultra-low power dual-modulus prescaler in 0.25 um standard CMOS,” IEEE International Symposium on Circuit and System (ISCAS), vol. 5, pp. 741-744, May 2000.
[26] H. Wu, and A. Hajimiri, “A 19 GHz 0.5 mW 0.35 μm CMOS frequency divider with shunt-peaking locking-range enhancement,” IEEE ISSCC Dig. Tech. Papers, pp. 412-413, Feb. 2001.
[27] R. J. Betancourt-Zamora, S. Verma, and T. H. Lee, “1 GHz and 2.8 GHz CMOS injection- locked ring oscillator prescalers,” IEEE Symposium on VLSI Circuits, pp. 47-50, June 2001.
[28] P. Kinget, R. Melville, D. Long, and V. Gopinathan, “An injection locking scheme for precision quadrature generation,” IEEE J. Solid-State Circuits, vol. 37, pp. 845-851, July 2002.
[29] H. R. Rategh, and T.H. Lee, “Super-harmonic injection-locked frequency dividers,” IEEE J. Solid-State Circuits, vol. 34, pp. 813-821, June 1999.
[30] W. Z. Chen, and C. L. Kuo, “18 GHz and 7 GHz super-harmonic injection-locked dividers in 0.25pm CMOS technology,” IEEE European Solid State Circuits Conference (ESSCIRC), pp. 89-92, Sept. 2002.
[31] H. Wu, “Signal generation and processing in high-frequency/high-speed silicon based integrated circuits, “ PhD thesis, California Institute of Technology, 2003.
[32] R. Adler, “A study of locking phenomena in oscillators,” Proc. IEEE, vol. 61, pp.1380-1385, Oct. 1973.
[33] H. Wu and L. Zhang, “A 16-to-18GHz 0.18μm epi-CMOS divide-by-3injection-locked frequency divider,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2006, pp.27–29.
[34] S.-L. Jang, C.-W. Chang, C.-F. Lee, and J.-F. Huang, “Divide-by-3 LC injection locked frequency divider implemented with 3D inductors,” IEICE Trans. Electron., vol. E91-C, no.6, pp. 956–962, Jun. 2008.
[35] S.-L. Jang, C.-Y. Lin, and C.-F. Lee, “A low voltage 0.35μm CMOS frequency divider with the body injection technique,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 7, pp.470–472, July 2008.
[36] Y.-H. Chuang, S.-H. Lee, R.-H. Yen, S.-L. Jang, J.-F. Lee, and M.-H. Juang, “A wide locking range and low voltage CMOS direct injection locked frequency divider,” IEEE Microw. Wireless Compon. Lett., vol. 16, no. 5, pp. 299–301, May 2006.
[37] H. Wu and A. Hajimiri, “A 19 GHz 0.5 mW 0.35 um CMOS frequency divider with shunt-peaking locking-range enhancement,” in IEEE ISSCC Dig. Tech., Feb. 2001, pp. 412–413.
[38] L. Wang, Y. Z. Xiong, S. M. Hu, and T. G. Lim, “A 0.13-μm HBT divide-by-6 injection-locked frequency divider,” 2011 IEEE ASSC Conf., Nov. 2011, pp.97-100.
[39] C.-C. Chan, T.-H. Lin, and H.-Y. Chang, “A 31.2% locking range K-band divide-by-6 injection-locked frequency divider using 90 nm CMOS technology,” in 2015 IEEE MTT-S International Microwave Symposium Digest,Phoenix, USA, May 2015.
[40] T. Siriburanon, W. Deng, A. Musa, K. Okada, and A. Matsuzawa, “A 13.2% loking-range divide-by-6, 3.1mW, ILFD using even-harmonic-enhanced direct injection technique for millimeter-wave PLLs, ” IEEE European Solid-State Circuits Conf., 2013, pp. 403-406.
[41] P.-H. Feng, and S.-H. Liu, “A current-reused injection-locked frequency multiplication/division circuit in 40-nm CMOS,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1523- 1532, Apr. 2013.
[42] S.-L. Jang, T.-C. Kung and C.-W. Hsue, “Wide-locking range divide-by-3 injection-locked frequency divider through enhanced 2nd harmonic," IEEE Microw. Wireless Compon. Lett., pp.537-539, 2016.
[43] S.-L. Jang and C.-Y. Lin, “ A wide-locking range class-C injection-locked frequency divider,” Electron, Lett.,vol. 50, 23, pp.1710-1712, 2014.
[44] S.-L. Jang, X.-Y. Hang, and W.–T. Liu,”Review: capacitive cross-coupled injection-locked frequency dividers,” Analog Integr. Circ. Sig Process, 88:97–104, 2016.
[45] S.-L. Jang, and C.-W. Chang, “ A 90nm CMOS LC-tank divide-by-3 injection-locked frequency divider with record locking range,”IEEE Microw. Wireless Compon. Lett., vol. 20, pp.229-231, April, 2010.
[46] S.-L. Jang, Y.-S. Chen, C.-W. Chang, and C.-C. Liu, “ A wide-locking range ÷3 injection-locked frequency divider using linear mixer,”IEEE Microw. Wireless Compon. Lett.,vol. 20, pp.390-392, July, 2010.
[47] S.-L.Jang and C.-Y. Chuang, “ Wide-locking range ÷3 series-tuned injection-locked frequency divider,” Analog Integr. Circ. Sig Process.,vol. 76, Issue 1, pp. 111-116, 2013.
[48] M. Farazian, P. S. Gudem, and L. E. Larson, “A CMOS multi-phase injection-locked frequency divider for V-band operation,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 4, pp. 239–241, Apr. 2009
[49] F. H. Huang, D. M. Lin, H. P. Wang, W. Y. Chiu, and Y. J. Chan, “20 GHz CMOS injection-locked frequency divider with variable division ratio,” in Proc. IEEE Radio Freq. Integr. Circuits Symp., Jun. 2005, pp. 469–472.
[50] M. Acar, D. Leenaerts, and B. Nauta, “A wideband CMOS injection locked frequency divider,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. , Jun. 2004, pp. 211–214.
[51] Y.-H. Chuang, S.-H. Lee, R.-H. Yen, S.-L. Jang, J.-F. Lee and M.-H. Juang, “ A wide locking range and low voltage CMOS direct injection-locked frequency divider,” IEEE Microw. Wireless Compon. Lett., vol. 16,no. 5,pp. 299-301, May 2006.
[52] S.-L. Jang, R.-K. Yang, C.-W. Chang, M.-H. Juang, and C.-C. Liu, “Dual-band transformer-coupled quadrature injection-locked frequency dividers,” Microw. Opt. Technol. Lett., pp.1561-1564, July, 2011.
[53] S.-L. Jang, C.-W. Chang, J.-Y. Wun and M.-H. Juang, “Quadrature injection-locked frequency dividers using dual-resonance resonator,” IEEE Microw. Wireless Compon. Lett., vol. 21, no. 1, pp. 37-39, Jan. 2011.
[54] S.-L. Jang, W.-C. Cheng and C.-W. Hsue, “ A triple-resonance RLC-tank divide-by-2 injection-locked frequency divider,”Electronics Letters, Vol. 52 No. 8 pp. 624–626, 2016.
[55] Y.-H. Chuang, S.-H. Lee, R.-H. Yen, S.-L. Jang and M.-H. Juang, “ A low-voltage quadrature CMOS VCO based on voltage-voltage feedback topology ,” IEEE Microw. Wireless Compon. Lett., pp.696-698, Dec. 2006.
[56] S.-L. Jang, Li-Te Chou, J.-F. Huang, and C.-W. Chang, “A dual-band dual-resonance quadrature injection-locked frequency divider,”IEICE Trans.on Electron.,Vol.E94-C,No.8,pp.1336-1339,Aug. 2011.
[57] K. Kobayashi, A. Oki, L. Tran, J. Cowles, A. Gutierrez-Aitken, F. Yamada, T. Block, and D. Streit, “A 108-GHz InP-HBT monolithic push push VCO with low phase noise and wide tuning bandwidth,” IEEE J. Solid-State Circuits, vol. 34, pp. 1225–1232, Sept. 1999.
[58] F. X. Sinnesbichler and B. Hautz and G. R. Olbrich, “A Si/SiGe HBT dielectric resonator push-push oscillator at 58 GHz,” IEEE Microwave and Guided Wave Letters, vol. 10, pp. 145–147, April 2000.
[59] R. Wanner, H. Schäfer, R. Lachner, G. R. Olbrich, and P. Russer, “A fully integrated SiGe low phase noise push-push VCO for 82 GHz,” in European Gallium Arsenide and other Compound Semiconductors Application Symp., Paris, France, 3.-7.10.2005, pp. 249–252, oct 2005.
[60] Catli, B.; Hella, M.M. Triple-push operation for combined oscillation/division functionality in millimeter-wave frequency synthesizers. IEEE J. Solid-State Circuits 2010, 45, 1575–1589.
[61] S. Lai, D. Kuylenstierna, M. Ozen, M. Horberg, N. Rorsman, I. Angelov, and H. Zirath, “Low phase noise GaN HEMT oscillators with excellent figures of merit,” IEEE Microw. Wireless Compon. Lett., vol. 24, pp. 412-414, Apr. 2014.
[62] H. Liu, X. Zhu, C. C. Boon, X. Yi, M. Mao, and W. Yang, “Design of ultra-Low phase noise and high power integrated oscillator in 0.25 µm GaN-on-SiC HEMT technology,” IEEE Microw. Wireless Compon. Lett., vol. 24, pp. 120–122, 2014.
[63] X S. Lai, D. Kuylenstierna, M. Hörberg, N. Rorsman, I. Angelov, K. Andersson, H. Zirath, “Accurate phase noise prediction for a balanced Colpitts GaN HEMT MMIC oscillator,” IEEE Trans. Microwave Theory & Tech., vol. 61, no. 11, pp. 3916-3926, Nov., 2013.
[64] Z. Herbert, S. Lai, K. Dan, F. Jonathan, A. Kristoffer and R. Niklas, “ An X-band low phase noise AlGaN-GaN-HEMT MMIC push-push oscillator,” IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). ,2011
[65] X. Lan, M. Wojtowicz, M. Truong, F. Fong, M. Kintis, B. Heying, I. Smorchkova and Y. C. Chen, “A V-band monolithic AlGaN/GaN VCO,” IEEE Microw. Wireless Compon. Lett., vol. 18, pp. 407–409, Jun. 2008.
[66] Kenichi Okada and Kazuya Masu, Modeling of Spiral Inductors, InTechOpen, Published on: 2010-04-01.
[67] Howard Cam Luong, Jun Yin, Transformer-based design techniques for oscillators and frequency dividers, Springer. 2016.
[68] A. V. Vertiatchikh, L.F. Eastman, “Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance,” IEEE. Electron Device Lett. , vol. 24, no. 9, pp. 535-537, Sept. 2003.
[69] Katz O, Bahir G, Salzman J. Low-frequency 1/f noise and persistent transients in AlGaN–GaN HFETs. IEEE Electron Device Lett, 2005, 26(6): 345
[70] Hegazi E., Abidi A.A. “Varactor characteristics, oscillator tuning curves, and AM-FM conversion”. IEEE J. Solid-State Circuits, 38(6):1033-1039, 2003.
[71] A. Hajimiri and T. H. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol.33, pp.179-194, Feb. 1998.
[72] T. N. T. Do, GaN HEMT Low frequency noise characterization for low phase noise oscillator design, thesis, 2015.
[73] T. N. T. Do, A. Malmros, P. Gamarra, C. Lacam, M-A. Di Forte-Poisson, M. Tordjman, M. Hörberg, R. Aubry, N. Rorsman, D. Kuylenstierna, “Effects of surface passivation and deposition methods on the 1/f noise performance of AllnN/AlN/GaN high electron mobility transistors,” IEEE Electron Device Letters, vol. 36, no. 4, pp. 315-317, Apr. 2015.
[74] M. Hörberg, S. Lai, T. N. T. Do, D. Kuylenstierna, “Phase noise analysis of a tunedinput/tuned-output oscillator based on a GaN HEMT device,” in 44th European Microwave Conference (EuMC) Proceedings, 5-10 Oct. 2014, Rome, Italy, pp. 11181121.
[75] M. Hörberg, T. Emanuelsson, S. Lai, T. N. T. Do, H. Zirath, D. Kuylenstierna, “Phase Noise Analysis of an X-band Ultra-low Phase Noise GaN HEMT based Cavity Oscillator,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 8, pp. 2619-2629, Aug. 2015.
[76] Y.-L. Tang and H. Wang, “A 24.6-GHz MMIC HBT triple-push oscillator,” 31st European Microwave Conference, London, England, pp. 113-116, Sept. 2001.
[77] J. Choi, and A. Mortazawi, “Design of push- push and triple-push oscillators for reducing 1/f noise upconversion,“ IEEE Trans. Microwave Theory and Techniques, vol. 53, no. 11, pp. 3407-3414, Nov. 2005.
[78] B. Catli and M. Hella, “Triple-push operation for combined oscillation/division functionality in millimeter-wave frequency synthesizers,” IEEE J. Solid-State Circuits, vol. 45, pp. 1575–1589, Aug. 2010
[79] C.-C. Chen, C.-C. Li, B.-J. Huang, K.-Y. Lin, H.-W. Tsao, and H. Wang, “Ring-based triple-push VCOs with wide continuous tuning ranges,” IEEE Trans. Microw. Theory Tech., vol. 57, no. 9, pp. 2173–2183, Sep. 2009.
[80] O. Momeni and E. Afshari, “High power terahertz and millimeter-wave oscillator design: A systematic approach,” IEEE J. Solid-State Circuits, vol. 46, no. 3, pp. 583–597, Mar. 2011.
[81] S.-L. Jang, ” A three-phase pMOS voltage-controlled oscillator using ring and triple-push coupling,”Microw. Opt. Technol. Lett. vol. 57, no. 11, pp.2529-2532, 2015.
[82] S. Lai, D. Kuylenstierna, M. Ozen, M. Horberg, N. Rorsman, I. Angelov, and H. Zirath, “Low phase noise GaN HEMT oscillators with excellent figures of merit,” IEEE Microw. Wireless Compon. Lett., vol. 24, pp. 412-414, Apr. 2014.
[83] H. Liu, X. Zhu, C. C. Boon, X. Yi, M. Mao, and W. Yang, “Design of ultra-Low phase noise and high power integrated oscillator in 0.25 µm GaN-on-SiC HEMT technology,” IEEE Microw. Wireless Compon. Lett., vol. 24, pp. 120–122, 2014.
[84] Meng-Yan Feng, “10-GHz VCO using transformer-based LC tank with low phase Noise,” Lot No.GaN25-104B-A0020, CIC Tapeout GaN25-104B, 11 May 2015.
[85] Chih-Chiang Kang, “Low phase noise ring oscillator with triple-push technique,” Lot No.GaN25-104B-A0013, CIC Tapeout GaN25-104B, 11 May 2015.