壓控振盪器與除頻器是頻率合成器電路中，主要的電路之一。對壓控振盪器而言，低相位雜訊可避免相鄰雜訊訊號經由混波轉換的干擾。而振盪器的輸出則經由除頻器來達成降頻的工作，因此，除頻器需具有高頻操作，寬的操作頻寬及低功率消耗。
本論文分別提出了二個電壓控制振盪器與一個注入鎖定除頻器，第一個是一利用注入鎖定完成低電壓四相位輸出電壓控制振盪器，第二個是一0.6伏低功耗阿姆斯壯電壓控制振盪器，第三個是一主動電感除二注入鎖定除頻器；前者是使用台積電0.35微米製程去實現，再者是使用台積電0.18微米製程去實現，而後者是使用台積電0.13微米製程去實現。
首先，本論文呈現一利用注入鎖定完成低電壓四相位輸出電壓控制振盪器。此四相位電路籍著尾電感組成二個直接注入鎖定除頻器，在一注入鎖定除頻器中，尾電感輸出節點的二次諧波頻率成份，注入到另一注入鎖定除頻器的注入電晶體閘極，並互相耦合產生牽制而形成四相位輸出。電源0.8 V時操作在3.8 GHz 頻帶在1MHz偏移頻率下的相位雜訊為-119.41 dBc/Hz，且FOM為-183.52 dBc/Hz，功率消耗為5.6 mW，可調電壓由0 V至0.8 V，可調範圍從3.771GHz 至3.823 GHz，晶片面積為0.801 × 0.928 mm2。
其次，呈現一0.6伏低功耗阿姆斯壯電壓控制振盪器。經由交叉偶合電晶體組成二個單端阿姆斯壯電壓控制振盪器獲得一差動輸出，並運用到閘極電壓比汲極電壓高的特性，可使得供應電源來的更小。電源0.6 V時操作在3.85 GHz 頻帶在1MHz偏移頻率下的相位雜訊為-120.02 dBc/Hz，且FOM為-188.5 dBc/Hz，功率消耗為2.1 mW，可調電壓由0 V至2.0 V，可調範圍從3.81 GHz 至4.36 GHz，晶片面積為0.951 × 0.589 mm2。
最後，學生本人使用可調式主動電感實現一低功耗和寬操作頻帶除二之注入鎖定除頻器。一尾電晶體交叉偶合電壓控制振盪器設計新式主動電感之注入鎖定除頻器，且利用尾電晶體來當注入訊號端時，此電壓控制振盪器可當注入鎖定除頻器來使用。當可調電壓由0.67 V 至 0.81 V，可調範圍從3.78 GHz 至1.24 GHz，在注入訊號功率為0 dBm時，注入鎖定除二的操作頻帶為1.69 GHz 至 8.18 GHz，其鎖定範圍6.49 GHz。

The key building blocks in the frequency synthesizer are the voltage-controlled oscillator (VCO) and the high frequency divider circuit. Most importantly, low phase noise is required to avoid corrupting the mixer-converted signal by close interfering tones for VCO circuit. The output of the VCO is divided down by the frequency divider which requires operating at high frequencies, wide operating range and lower power consumption.
This thesis presents two voltage-controlled oscillators (VCO) and one injection locked frequency divider (ILFD), the first one is a low voltage quadrature VCO implemented with ILFDs, the second one is a 0.6 V low power Armstrong VCO and the final one is a high oscillation frequency active-inductor ILFD; the first one is implemented by using TSMC 0.35μm and the second is implemented by using TSMC 0.18μm, the final one is implemented by using TSMC 0.13μm CMOS process respectively.
First, the quadrature voltage-controlled oscillator (QVCO) consists of two direct-injection locked frequency dividers (ILFDs) with a tail inductor. The 2nd harmonic frequency component at the output node of tail inductor in one ILFD is injected to the gate of injection MOSFET in the other ILFD to couple the two independent ILFDs. At the supply voltage of 0.8 V, the output phase noise of the QVCO is -119.41 dBc/Hz at 1MHz offset frequency from the carrier frequency of 3.8 GHz, and the figure of merit is -183.52 dBc/Hz. At the supply voltage of 0.8 V, the total power consumption is 5.6 mW. Tuning range is from 3.771 to 3.823 GHz, while the control voltage was tuned from 0 to 0.8 V. The die area is 0.801 x 0.928 mm2.
Then a low power differential VCO is proposed, it consists of two single-ended Armstrong oscillators via cross-coupled transistors to obtain a differential output. At the supply voltage of 0.6 V, the output phase noise of the differential VCO is -120.02 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 3.85 GHz, and the figure of merit is -188.5 dBc/Hz. Total VCO core power consumption is 2.1 mW. Tuning range is about 550 MHz, from 3.81 to 4.36 GHz, while the control voltage was tuned from 0 to 2.0 V.
Finally, a low power and wide-operation frequency range divide-by-2 ILFD with tunable active inductor (TAI). The ILFD uses a new active-inductor to design a cross-coupled VCO with a tail transistor, and when the tail is used as injection MOSFET, the VCO can be used as an ILFD. The measured tuning range of VCO is from 3.78 GHz to 1.24 GHz while VT varies from 0.67 V to 0.81 V. The measured operation range is from 1.69 GHz to 8.18 GHz at the injection power of 0 dBm.

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