在發光二極體(Light emitting diode, LED)中，散熱一直是影響發光效率的問題中必須解決的問題，而氮化鎵材料必須生長在藍寶石基板上使得成本降低。為了解決藍寶石基板散熱不佳以及改善發光效率的問題，本論文使用了(1)銀膠固晶方法並先磨薄藍寶石基板，比較固晶前後發光效率的差異，(2)覆晶封裝，將氮化鎵晶片覆晶移轉至矽基板，比較製鍍不同比例的Ti/Cu/Sn金屬接合層，在厚度分別為500 Å /15000 Å/10000 Å的條件下，剪切力測試能有效的承受26公斤力以上的強度。
對於氮化鎵垂直共振腔面射型雷射(VCSEL)而言，能夠有效覆晶且製鍍垂直共振腔上下端面的介電質布拉格反射鏡是製作氮化鎵VSCEL關鍵技術之一，本論文成功使用TiO_2/SiO_2設計8對膜層並鍍製出高反射率布拉格反射鏡，達到低於1%穿透率的禁止帶範圍在401nm到468nm之間。

In light emitting diodes (LEDs), heat dissipation has always been a problem that must be solved in the problem of luminous efficiency, and gallium nitride materials must be grown on sapphire substrates to reduce cost. In order to solve the problem of poor heat dissipation of sapphire substrate and improve luminous efficiency, this paper uses (1) silver glue solid crystal method and firstly grinds the sapphire substrate to compare the difference in luminous efficiency before and after solid crystal, (2) flip chip packaging, The GaN wafer is transferred to the ruthenium substrate, and the Ti/Cu/Sn metal bond layers are plated at different ratios. The shear force test can be effective under the conditions of 500 Å /15000 Å/10000 Å. Withstands strength above 26 kg.
For the gallium nitride vertical cavity surface-emitting laser (VCSEL), the dielectric Distributed Bragg Reflector capable of effectively flipping and plating the upper and lower end faces of the vertical cavity is one of the key technologies for fabricating GaN VSCEL. Successfully designing 8 pairs of layers using TiO_2/SiO_2and plating high reflectivity Bragg mirrors, the stop band range of less than 1% transmittance is between 401 nm and 468 nm.

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