發光二極體LED (Light Emitting Doide)其用途及性能都極為廣泛，但發光二極體主要是在藍寶石基板上磊晶，所以散熱一直是個問題，為了改善這問題，而利用覆晶封裝及雷射剝離藍寶石基板的技術，將氮化鎵薄膜轉移到導熱係數較好的矽基板上。
　　本實驗的覆晶封裝是採用金屬共晶接合，共晶接合的金屬為銅錫合金。先在氮化鎵表面鍍製一層二氧化矽以減少雷射剝離藍寶石基板時的熱傳導至銅錫合金，並增加基板剝離後剩下的氮化鎵薄膜總厚度。然後將合金鍍製在氮化鎵及矽晶圓上進行晶圓共金接合；最後做非破壞性的剪切力測試，看看是否能承受設定的推力測試。通過測試後，使用商用的雷射剝離藍寶石基板技術，將氮化鎵薄膜轉移到矽基板上。雷射剝離藍寶石基板後的氮化鎵薄膜的部分表面出現了高低起伏的現象，在高低起伏的表面上偶爾會出現氮化鎵薄膜破裂的情況。這是因為雷射剝離時所產生的高溫也會影響焊錫，焊錫在高溫下會因為達到熔點而局部液化，促使應力產生，進而造成表面的起伏，較嚴重的情況，則是會使氮化鎵薄膜與矽基板在交界處脫離，甚至破裂。但由於有二氧化矽隔熱層，已比過去的結果改善許多。此外，也把雷射剝離後的氮化鎵薄膜，去做蝕刻及快速熱退火的測試，並觀察其結果。
　　MSM(金屬/半導體/金屬)結構是由兩個蕭特基接面(Schottky junction) 反向串聯而形成的結構。此結構有製程簡單、短波長吸收效率高等優點。本研究製作MSM結構的光偵測器，並量測其數據，如:暗電流、照光電流、響應率、光電流、外部量子效率等。並與其他光偵測器做比較。

Light Emitting Diode (LED) has a wide range of applications, but the common epitaxial LED is grown on sapphire substrate that remains a problem of heat dissipation. In order to address this problem, flip-chip packaging and laser lift off of the sapphire substrate technology are used to transfer the Gallium Nitride (GaN) epitaxial film to a silicon substrate that has better thermal conductivity.
The flip chip method in this experiment uses metal eutectic bonding of Copper-Tin (Cu/Sn) alloy. First, a layer of silicon oxide deposited on the GaN surface to reduce the heat conductivity of the copper-tin alloy and to maintain the total thickness of the GaN film after the substrate is lifted off. Then, the alloy is deposited on both of GaN and silicon for wafer bonding. Finally, a non-destructive shear test is performed to see if it can withstand the bonding strength. After passing the test, commercial laser lift-off of sapphire substrate technology was used to transfer the GaN film to the silicon substrate. The thermal coeficient differences between GaN/Silicon oxide and Silicon oxide/alloy results in bad uniformity of the GaN surface after laser lift-off and occasionally cracks appeared because of the high temperature that is generated during the process. The alloy will partially melt at high temperature which will promote stress and cause the bad uniformity of the surface. In more serious cases, GaN film separates from the silicon substrate at the junction, or even breaks. However, due to the silicon oxide heat insulation layer, the results have been improved a lot. In addition, the GaN film after laser lift-off was tested for etching and rapid thermal annealing, and the results were observed.
MSM (Metal/Semiconductor/Metal) structure is a structure formed by connecting two Schottky junctions in reverse series. This structure has the advantages of simple manufacturing process and high absorption efficiency at short-wavelength. In this research, a photodetector with MSM structure is made and its characteristics are measured, such as dark current, photocurrent, and illumninance. In addition, the responsivity and external quantum efficiency are compared with other light detectors such as phototransistor, p-i-n junction, and Schottky junction.

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