發光二極體LED(Light Emitting Diode)其用途及性能都極為廣泛，但可見光發光二極體主要是在藍寶石基板上磊晶，所以散熱一直是個問題。為了改善這個問題，我們利用覆晶封裝的技術，將氮化鎵覆晶接合到導熱係數較好的矽基板上。
微型LED陣列是將LED微小化、陣列化，其特性是每一點像素都能定址控制單點驅動，且具有亮度高、色彩飽和度高及低功耗的特性。透過封裝技術，搭配CMOS驅動電路，在未來可以應用於穿戴型裝置或智慧型手錶等小尺寸顯示器。本論文使用商用氮化鎵發光二極體晶圓，成功製作出30-µm發光孔徑的微型LED陣列。實驗結果分別量測1×5 LED 陣列與2×4 LED 矩陣的光電特性與CCD影像。
使用製作完成的發光二極體陣列進行覆晶接合，共金接合的金屬為銅錫合金。將矽基板鍍製一層二氧化矽並沉積圖案化金屬電極，然後將製作完成的發光二極體陣列的電極與矽基板的電極各鍍上一層銅錫合金，最後進行覆晶接合。將接合完成的發光二極體陣列進行量測，元件出現短路以及脫離矽電路板的情形。利用顯微鏡觀察脫落的元件，發現殘留的松香助焊劑是造成元件短路的主因，因此進行了松香助焊劑的溫度與時間關係實驗，並歸納出解決松香助焊劑殘留問題的解決方法。

Light Emitting Diode (LEDs) has widely used and performance. Because of the visible light emitting diodes are epitaxy on the sapphire, heat dissipation has always been a problem. In order to solve this problem, this paper uses the technology of flip-chip packaging to bond the gallium nitride flip chip on a silicon substrate with good thermal conductivity.
The micro-LED array is to miniaturize and array the LEDs. Its characteristic is that each pixel can be addressed and controlled by a single-point drive, and it has the characteristics of high brightness, high color saturation and low power consumption. Through the packaging technology and CMOS drive circuit, it can be applied to small-size displays such as wearable devices or smart watches in the future. In this paper, a commercial GaN light-emitting diode wafer was used to successfully fabricate a micro-LED array with a 30-µm luminous aperture. The experimental results measured the photoelectric characteristics and CCD images of a 1×5 LED array and a 2×4 LED matrix.
The micro-LED array use the speculum metal to flip-chip bonding on silicon substrate with metal lines. Depositing the silicon dioxide and patterned metal electrodes on the silicon substrate. Then, the electrodes of the micro-LED array and the silicon substrate are each evaporation with a layer of the speculum metal. Finally, use the micro-LED array flip-chip bonding on the silicon substrate. Measured the micro-LED array after the bonding, the components were short-circuited and detached from the silicon substrate. Using a microscope to observe the dropped components, it was found that the residual flux was the major cause of the short circuit of the components. Therefore, we control an experiment on the relationship between temperature and time of flux, and then summarize a solution to the problem of flux residue.

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