光電積體電路透過矽波導同時傳輸不同光訊號之優勢，提供了更高的傳輸量以及頻寬，克服在銅纜中傳輸速度之限制，能因應現今雲端運算及大數據應用之需求，為下一世代晶片關鍵之技術。 此論文探討利用兩種不同矽光子帄台實現光被動元件的可行性。首先透過比利時微電子研究中心所提供之矽光子製程，在絕緣層覆矽基板上製作被動元件，透過塞取環狀共振器結構建構高密度多工器以及梳狀濾波器，再使用麥克森干涉儀之結構作為光網路監測系統之干涉元件，量測結果之趨勢與模擬結果相符。 此外，也透過台積電標準九十奈米互補式金氧半製程，在不變動任何製程參數下，使用多晶矽層製作光學波導，再透過次波長光柵之結構減低其表面粗糙度及多晶矽材料所造成之損耗，讓原本112 dB/cm之多晶矽波導傳輸損耗減少至小於30 dB/cm，增加了直接利用標準互補式金氧半製程製作光被動元件之可行性。

Silicon phonics circuit has the advantage of simultaneously transmit multiple light signals through a silicon optical waveguide, providing higher transmission speed and wider bandwidth than copper wires. It could fulfill demands of cloud computing and big data application and will become the core technique for next-generation semiconductor chip manufacturing industry.
This thesis investigated two different silicon photonics platforms for realizing optical passive devices. The first platform is the silicon-on-insulator (SOI) process provided by IMEC for fabricating optical passive elements. Dense wavelength division multiplexing filters and comb filters are realized with add/drop ring resonator structure. The optical network monitoring devices are realized in terms of the Michelson interferometer structure.
The second platform is the TSMC standard 90 nm CMOS process where the thin polysilicon layer is employed for fabricating optical waveguide. Without modifying any parameter in the standard process, the transmission loss of poly silicon waveguide is 112 dB/cm due to surface roughness and material absorption. To reduce such loss, the subwavelength grating waveguide structure is used and the propagation loss is reduced to be below 30 dB/cm. This makes the realization of photonic integrated circuit feasible by using the polysilicon waveguide in standard CMOS process as the building block.

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