本論文乃以未來世代高效矽晶太陽能電池的技術發展為議題，針對矽 晶以及鍺晶可能製作矽、鍺異質接合，分別以射頻電漿輔助化學氣相沉積法將氫化非晶矽及氫化非晶鍺薄膜沉積於鍺晶及矽晶上，以反射式電子高能繞射觀察異質/同質之結晶臨界溫度且探討做為鈍化層薄膜的鈍化效果。
將氫化非晶鍺薄膜及氫化非晶矽薄膜沉積於鍺晶片上加以比較兩者之結晶臨界溫度，可以發現不論在高沉積速率或低沉積速率下，同質沉積均較易觀察到結晶的現象，然而將氫化非晶鍺薄膜及氫化非晶矽薄膜沉積於矽晶片上卻在低成長速率發現不同的結果。
於500 μm單晶鍺晶片雙面沉積30 nm氫化非晶矽薄膜之最佳有效載子生命週期達180.7 μs ；於280 μm單晶矽晶片雙面沉積30 nm氫化非晶鍺薄膜之最佳有效載子生命週期可達164.3 μs；而於500 μm單晶鍺晶片雙面沉積30 nm氫化非晶鍺薄膜之有效載子生命週期最高可達269.7 μs 。

In this thesis, we explored the basis phenomena for developing high efficienty crystalline Si/Ger heterojunction solar cells. We grew hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous germanium (a-Ge:H) thin layers on silicon and germanium wafers using PECVD method and observed the amorphous to crystalline phase transition regime as functions of substrate temperature and film growth rate. By depositing 3 nm of thin layers and analyzed using RHEED, we obserbed that the transition temperature for a-Si:H grown on Ge is about 35 °C higher than that on Ge under a growth rate of 3 Å /s, while the transition temperature for a-Ge:H grown on Si is about 10 °C higher than that on Ge.

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