本研究主要利用低溫、低電漿密度的UHV-PECVD系統成長太陽能電池的i層鈍化層，其材料種類有a-Si:H、a-SiOx:H、a-SiNx:H及a-SiCONx:H，並使用金屬遮罩搭配獨立腔體聯結式PECVD系統成長p、n層，嘗試做出新型IBC結構的太陽能電池元件。
首先以KOH溶液在矽基材正面製作出金字塔形結構，用SEM觀察發現其具有緻密且分布均勻的表面，反射率低至10 %。使用橢圓儀和紫外光與可見光光譜儀對於鈍化層a-Si:H的光學能隙做測量結果發現氫氣稀釋比從10升到50時，薄膜的光學能隙約從1.84 eV提昇至1.94 eV。另外，加入碳源氣體的a-SiCx:H層具高光穿透度高( >90 %)及寬能隙(1.96 eV~2.82 eV)等優點，在作為矽晶太陽能電池的射極應是適當的。
在矽晶上的鈍化層界面由RHEED觀察得知，使用n-Si(100)的基材，在氫氣稀釋比為10時的初期長膜，即有結晶的現象產生。另外使用潻加CO2 的長膜發現，當鈍化層中含有氧化矽鍵結時，在同等條件下，鈍化層薄層(5 nm)表面卻呈現非晶結構。比較各種非晶矽鈍化層的效應時發現，含氧 9.1 %~26.2 %的a-SiOx:H層、含氮 13.1 %~18.6 %的a-SiNx:H的鈍化層來鈍化矽晶表面後，皆可使其有效載子生命期達到2000 μs以上且表面復合速率在5.6 cm/s以下，代表達到一定的鈍化效果。
在太陽能電池元件的製作上，以PECVD法製備鈍化層後，隨即以低溫製程方式利用遮罩在矽基材背面分別製作了p+及n+的區域，並成長TEOS-SiOx鈍化層後，以一道光罩製作了點狀電極的區域。最後用電子束蒸鍍及似網印法做電極部分，即完成元件的製作。
以IV測量暨太陽光模擬器來評估元件的光電特性，發現未照光下已具二極體特性，照光後，開放電壓約0.2 V，短路電流最佳約0.4 mA/cm2。

This research focused on different materals characterization for passivation layers, such as a-Si:H, a-SiCx , a-SiOx , a-SiNx , and a-SiCONx . We used low temperature and low power density plasma process to make a new structure of IBC solar cell by UHV-CVD, triple-chamber PECVD, and touch-screen PECVD systems.
The silicon surface was etching by KOH solution, and it became dense and uniform texture structure, as like pyramids which were observed by SEM. The best reflection index of texture structure was under 10 %. The a-Si:H layers were deposited that when hydrogen dilution ratio increased from 10 to 50, the optical band gap increased from 1.84 eV to 1.94 eV by UV-Visible spectrometer and ellipsometry. Besides, silicon carbide film was suitable for emitter or BSF of solar cell because it had high optical transmittance, and wide band gap.
The a-Si:H layers were deposited on n-Si(100) that when hydrogen dilution ratio increased from 10 to 50, their surface were crystalline. On the other hand, when hydrogen dilution ratio was 10 as SiO2 / n-Si(100) substrate, the surface was amorphous. Using a-SiOx:H layers which contained oxygen 9.1 %~26.2 % and a-SiNx:H layer which contained nitrogen 13.1 %~18.6 % to passivate silicon surface，their effective carrier lifetime reached above 2000 μs. Besides, the surface recombination velocity were all under 5.6 cm/s，it indicated good passivation effects.
In flow processes of the solar cell, we grew a passivation layer by UHV-PECVD, and used mask to grow p+ and n+ layer on the back of silicon substrate in low temperature process. After growing TEOS-SiOx passivation layer, we made the hole area for point electrode by etching and photolithography process. And we used e-beam evaporation and screen imprint-like methods to make electrodes.
Finally, we used IV-curve and sun light simulator to measure the optoelectronic property of the solar cell chip. The chip had diode property under dark surroundings. After lighting, we could get that Voc was about 0.2 V, and Isc was about 0.4 mA/cm2.

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