中文摘要
當薄膜沈積於基材上會受到製程參數與晶格常數的不同造成殘留應力的發生，而殘留應力將會影響薄膜之晶格結構與表面粗糙度，且隨著元件之使用環境、溫度、濕度等條件的變化，進而使得薄膜產生與基材剝離的現象，造成元件之生命週期、穩定度與可靠度降低。
本文將利用射頻磁控濺鍍機濺鍍氧化鋅薄膜於石英（Quartz）、藍寶石（Sapphire）、鈮酸鋰（LiNbO3）、鉭酸鋰（LiTaO3）與具電極薄膜之矽基材（Au/Cr/Si3N4/Si、Pt/Ti/Si3N4/Si）基材上，利用單階段濺鍍技術與雙階段濺鍍技術改變濺鍍功率探討其對氧化鋅薄膜之晶體繞射強度、機械性質及薄膜應力之影響性。首先將鍍好之氧化鋅薄膜利用表面輪廓儀量測薄膜厚度，接著利用X光繞射儀探討其晶格結構與殘留應力之變化，最後再以掃描式電子顯微鏡觀察氧化鋅薄膜之表面形態。
氧化鋅薄膜沈積於具金屬之矽基材（Au/Cr/Si3N4/Si、Pt/Ti/Si3N4/Si）及石英基材上比沈積於藍寶石、鈮酸鋰及鉭酸鋰上有較高之結晶特性與薄膜品質。氧化鋅薄膜沈積於Au/Cr/Si3N4/Si基材上之殘留應力小於沈積於Pt/Ti/Si3N4/Si上，但氧化鋅薄膜沈積於Au/Cr/Si3N4/Si上之晶粒大於沈積於Pt/Ti/Si3N4/Si之基材上。然而氧化鋅薄膜沈積於藍寶石與鉭酸鋰基材卻因為晶格常數不匹配造成無結晶特性，氧化鋅薄膜沈積於鈮酸鋰基材上，因鈮酸鋰之菱面體晶體結構(Rhombohedral crystal system），則雙階段濺鍍技術無法凸顯其優異性。濺鍍參數由低瓦數再配合沈積高瓦數之雙階段濺鍍技術可提高薄膜品質與結晶特性也可降低沈積時間，但無法明顯大幅度降低氧化鋅薄膜之殘留應力。

Abstract
The lattice, mechanical properties and surface roughness of thin films can be influenced while an excess internal stress exists in thin films. Thin films are peeled off the substrate while devices are used in a bad environment included high temperature and humidity etc. Therefore, the lifetime, stability and reliability of devices will be reduced.
In the present study, the single step and two-step sputtering techniques are used to deposit the ZnO thin films on the various substrates included quartz, sapphire, LiTaO3, LiNbO3, Au/Cr/Si3N4/Si and Pt/Ti/Si3N4/Si. The thickness of the films is measured by 3D-profile. The structure and residual stress of ZnO films are measured by X-ray diffraction (XRD) analysis. Scanning electron microscope (SEM) is used to examine the morphology of ZnO thin films.
The ZnO films deposited onto the Au/Cr/Si3N4/Si, Pt/Ti/Si3N4/Si and quartz substrates reveal well crystallinity oriented along the c-axis than those of sapphire, LiTaO3 and LiNbO3 substrate. The residual stress of ZnO thin films deposited on Au/Cr/Si3N4/Si substrate is smaller than that of Pt/Ti/Si3N4/Si substrate, but the grain size of ZnO thin films deposited on the Au/Cr/Si3N4/Si substrate is larger than that of Pt/Ti/Si3N4/Si substrate. However, ZnO films deposited onto sapphire and LiTaO3 substrates reveal amorphous state and weakly preferred orientation toward the c-axis because of the higher lattice constant mismatch between ZnO thin films and the substrates. The two-step sputtering technique cannot effectively enhance the crystallinity of ZnO films deposited onto LiNbO3 substrate. This can attribute to higher lattice constant mismatch between ZnO films and LiNbO3 substrate, and crystal system variation between hexagonal structure of ZnO material and rhombohedral structure of LiNbO3 material. The two-step sputtering technique with a lower RF power step followed by a higher RF power step can greatly improve the crystallinity of ZnO films and shrink the deposition time, but it cannot obviously alleviate the residual stress in ZnO films.

參考文獻

[1]Fang, W., Tasi, H.C., and Lo, C.Y., “Determining thermal expansion coefficients of thin films using micromachined cantilevers.”, Sensors and Actuators, Vol. 77, pp. 21-27 (1999)
[2]Withers, P.J., and Bhadeshia, H.D.H., “Residual stress Part1 measurement techniques.”, Materials Science and Technology, Vol. 17, pp. 355-365 (2001)
[3]Anthony, E., “Stresses developed in optical film coatings”, Applied optics, Vol. 5, No. 1 (1966)
[4]鞠曉山，「以快速傅立葉轉換及數值方法測定光學薄膜殘留應力」，碩士論文，逢甲大學，台中（2008）
[5]Hsu, N.J., and Wang, C.H., “RF sputter 沈積ZnSSi和ZnOSi LED的光電特性分析”, Journal of China Institute of Technology, Vol. 31, No.12 (2004)
[6]劉吉卿，「以兩階段濺鍍法沉積氧化鋅壓電薄膜於薄膜體聲波共振器之應用」，碩士論文，國立中山大學，高雄（2006）
[7]Teresa, M., and Leaf, J., “Room temperature chemical vapor deposition of c-axis ZnO”, Journal of Crystal Growth, Vol. 274, pp. 412-417 (2005)
[8]Liu, Y.Y., Zang, Y.L., Wei, G.X., Li, J., Fan, X.L., and Cheng, C.F., “Stress and structural studies of ZnO thin films on polymer substrate under different RF powered conditions”, Materials Letters, Vol. 63, pp. 2597-2599 (2009)
[9]張仁銓，「非含鉛鈮酸鈉鉀陶瓷與氧化鋅薄膜之特性及其在表面聲波元件之應用」，碩士論文，國立成功大學，台南（2007）
[10] 郭益男，「反應性射頻辭控濺鍍氧化鋅薄膜之光機發光特性之研究」，碩士論文，國立中山大學，高雄（2004）
[11]Water, W., and Yuan, S.Y., “Physical and structural properties of ZnO sputtered films”, Materials Letters, Vol. 55, pp. 67-72 (2002),
[12]Amrani, B., and Hamzaoui, S., “Characterization of ZnO films prepared by reactive sputtering at different oxygen pressures”, Catalysis Today, Vol. 89, pp. 331-335 (2004)
[13]Lee, H.W., Lau, S.P., Wang, Y.G., Tay, B.K., and Hng, H.H., “Internal stress and surface morphology of zinc oxide thin films deposited by filtered cathodic vacuum arc technique”, Thin Solid Films, Vol. 458, pp. 15-19 (2004)
[14]Chen, R., Li, Z., and Gao, W., “Effect of substrate on the morphology, crystal structure and property of ZnO thin films”, Asia-Pacific Journal of Chemical Engineering, pp. 388-393 (2007)
[15]Preperlita, P., Medianu, R., Sbarcea, B., Garoi, F., and Filipescu, M., “The influence of using different substrates on the structural and optical characteristics of ZnO thin films”, Applied Surface Science, Vol. 256, pp. 1807-1811 (2010)
[16]Lim, W.T., Son, B.K., Kang, D.H., and Lee, C.H., “Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates, Thin Solid Films, Vol. 382, pp. 56-60 (2001)
[17]Lee, S., Tanaka, T., Inoue, K., Kim, J.M., Shin, Y.E., and Okuyama, M., “Stress influences on the ultrasonic transducers”, Sensors and Actuators A, Vol. 119, pp. 405-411 (2005)
[18]Liu, Y.Y., Yuan, Y.Z., Gao, X.T., Yan, S.S., Cao, X.Z., and Wei, G.X., “Deposition of ZnO thin film on polytetrafluoroethylene substrate by the magnetron sputtering method”, Materials Letters, Vol. 61, pp. 4463-4465 (2007)
[19]張君偉，「雙階段濺鍍技術於氧化鋅焦電感測器響應之影響」，碩士論文，國立台灣科技大學，台北（2007）
[20]劉吉卿，「以兩階段濺鍍法沉積氧化鋅壓電薄膜於薄膜體聲波共振器之應用」，碩士論文，國立中山大學，高雄（2007）
[21]Hsiao, C.C., Huang, K.Y., and Hu, Y.C., “Fabrication of a ZnO Pyroelectric Sensor”, Sensors, Vol. 8, pp. 185-192 (2008)
[22]Hsu, Y.H., Lin, J., and Tang, W.C., “Rf sputtered piezoelectric zinc oxide thin film for transducer applications”, Mater Electron, Vol. 19, pp. 653-661 (2008)
[23]楊引祥，「氧化鋅薄膜應用於拉福波液體感測器之分析與研製」，碩士論文，東南技術學院，台北（2006）
[24]金開聖，「ZnO 發光二極體之薄膜特性分析」，校慶論文，中華技術學院，新竹（2006）
[25]王惠民，「利用電子束蒸鍍法沉積氧化鋁緩衝層以作為高頻氧化鋅薄膜表面聲波元件之應用」，碩士論文，大同大學，台北（2007）
[26]鍾崇仁，「使用二氧化矽薄膜作為質子交換鈮（鉭）酸鋰表面聲波溫度補償之研究」，碩士論文，國立中山大學，高雄（2003）
[27]王茂進，「利用射頻磁控濺鍍法成長類鑽碳膜於矽基板上以製備高頻氧化鋅薄膜之表面聲波元件」，碩士論文，大同大學，台北（2007）
[28]田民波，薄膜技術與薄膜材料，五南圖書出版公司，（2007）
[29]Thornton, J.A., ”Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings ”, The Journal of Vacuum Science and Technology, Vol. 11, No.4, pp. 666（1974）
[30]林素霞，「氧化鋅薄膜的特性改良及應用之研究」，博士論文，國立成功大學，台南（2003）
[31]Mridha, S., and Basak, D., “Effect of thickness on the structural, electrical and optical properties of ZnO films”, Materials Research Bulletin, Vol. 42, pp. 875-882 (2007)
[32]葉甄佩，「氧化銦錫薄膜沈積於撓性基材之殘留應力量測與數值模擬」，碩士論文，聖約翰科技大學，台北（2009）
[33]王星強，「多層薄膜氧化鋅焦電感測器之殘留應力分析」，碩士論文，國立台灣科技大學，台北（2008）
[34]Zhang, Y., Du, G., Liu, D., Wang, X., Ma, Y., Wang, J., Yin, J., Yang, X., Hou, X., and Yang, S., “Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions”, Journal of Crystal Growth, Vol. 243, pp. 439-443 (2002)
[35]朱桂瑩，「薄膜殘留應力量測與數值模擬」，碩士論文，國立台灣科技大學，台北（2007）