摘要
　　本實驗使用反應式離子束濺鍍法來沉積氧化銦錫薄膜於玻璃基板上，在室溫狀態下，分別透過改變氧氣流量、陽極電壓以及基板與靶材距離，來觀察不同製程參數下薄膜特性的變化。隨著氧氣流量增加，氧氣的低濺鍍率導致薄膜沉積率下降，氧空缺消失導致薄膜電阻率上升，載子濃度下降並導致薄膜可見光區穿透率上升；隨著陽極電壓提高，離子束能量提高導致薄膜沉積率上升、氧空缺消失導致薄膜電阻率上升，並使表面粗糙度上升造成薄膜可見光區穿透率下降；隨著基板與靶材距離增加，到達基板的離子數減少導致薄膜沉積率下降、缺陷變多導致薄膜電阻率上升而可見光區穿透率下降。本實驗所得最佳σ/α值為13.2 Ω-1。

Abstract
ITO thin films have been successfully deposited at room temperature by ion beam sputter deposition. Effect of oxygen partial flow rates, ion beam energy and substrate to target distance are characterized. Experiment results reveal that as oxygen flow rate increases, the resistivity of ITO thin film increases due to reduced oxygen vacancy defects, while transmittance improved due to improved crystalline quality. As ion beam energy increases, the resistivity of ITO thin films increases as well, which is attributed to improved crystalline quality due to increased kinetic energy of sputtered particles. As substrate to target distance increases, the resistivity increases as well which is due to deteriorated film quality that results in increased defect density. ITO thin films deposited under optimized condition results in a σ/α ratio of 1.32×104 Ω-1.

參考文獻
[1] 楊明輝，「金屬氧化物透明導電材料的基本原理」，工業材料，第一百七十九卷，第134-144頁，2001。
[2] K. Badeker, “The discovery of transparent conductive materials,” Annalender Physik, vol. 22, p. 749, 1907.
[3] Y. S. Jung, D. W. Lee, and D. Y. Jeon, “Influence of dc magnetron sputtering parameters on surface morphology of indium tin oxide thin films,” Appl. Surf. Sci., vol. 221, pp. 136-142, 2004.
[4] S. A. Knickerbocker, and A. K. Kulkarni, “Calculation of the figure of merit for Indium Tin oxide films based on basic theory,” Vac. Sci. Technol., vol. 14, pp. 757-763, 1994.
[5] H. J. J. VanBoort, and R. Groth, “Low-pressure sodium lamps with indium oxide filter,” Philips Tech. Rev., Vol. 17, pp. 29-32, 1968.
[6] J. L. Vossen, “Transparent conducting films,” Physics of Thin Films, vol. 9, pp. 1-64, 1977.
[7] R. F. Bunshah, “Deposition technologies for films and coatings,” New Jersey Noyes Publications, vol. 3, pp. 5-9, 1982.
[8] D. R. Curran, L. Seaman, and D. A. Shockey, “Linking dynamic fracture to microstructural process, Shock wave and high-strain- rate phenomena in metal,” Shock Waves and High-Strain-Rate Phenomena in Metals, pp. 129-167, 1980.
[9] K. L. Chopra, S. Magor, and D. K. Pandya, “Transparent conductors-A status review,” Thin Solid Films, vol. 102, pp. 1-46, 1983.
[10] W. W. Tu, and B. S. Chiou. “Effect of annealing on electrical and optical properties of RF magnetron sputtered indium tin oxide films,” Thin Solid Films, vol. 68, pp. 497-504, 1994.
[11] M. Quaas, C. Eggsl, and H. Wulff, “Structural studies of ITO thin films the Rietveld method,” Thin Solid Films, vol. 332, pp. 277-281, 1998.
[12] A. J. Steckl, and G. Mohammed, “The effect of ambient atmosphere in the annealing of ITO films,” J. Appl. Phys., vol. 51, pp. 3890-3895,1980.
[13] M. Quaas, H. S. Ven, R. Hippler, and H. Wul, “The growth process of plasma -deposited ITO films investigated by grazing incidence X-ray techniques,” Surface Science, vol. 7 , pp. 454-456. 790-795, 2000.
[14] C. C. F. John, and J. B. Frank, “Properties of Sn-Doped In2O3 films prepared by RF sputtering,” Soc. J. Electrochem, vol. 122(12), pp. 1719-1724, 1975.
[15] P. Nath, and R. F. Bunshah, “Preparation of In2O3 and Tin-Doped In2O3 films by a novel activated reactive evaporation Technique,” Thin solid Films, vol. 69, pp. 63-68, 1980.
[16] M. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultravioletto-visible rejection ratio,” Appl. Phys. Lett., vol. 94, pp. 130-512, 2009.
[17] J. L. Vossen, “RF sputtered transparent conductors He Systems In2O3-SnO2,” RCA Review, vol. 32, pp. 289-296, 1971.
[18] F. Wu, B. S. Chiou, J. W. Choi, and K. H. Yoon, “Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating,” J. Appl. Phys., vol. 86, pp. 51-64 ,1999.
[19] Z. L. Pei, C. Sun, M. H. Tan, J. Q. Xiao, D. H. Guan, R. F. Huang, and L. S. Wen, “Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films,” J. Appl. Phys., vo1. 90, pp. 3432-3491, 2001.
[20] J. F. Mahoney, J. Perel, and A. T. Forrester, “Capillaritron︰A new, versatile ion source,” Appl. Phys. Lett., vol. 38, pp. 320-322, 1981.
[21] H. L. Hartangel, A. L. Dawar, A. K. Jain, and C. Jagadish, “Semiconducting Transparent Thin Films,” Institute of Physics, Philiadelphia, vol. 12, pp. 219-230, 1995.
[22] H. U. Habermeier, “Properties of Indium Tin Oxide Thin Films Prepared by
Reactive Evaporation,” Thin Solid Films, vol. 80, pp. 157-160, 1981.
[23] 楊錦章，「基礎濺鍍電漿」，電子發展月刊，第六十八期，第13頁，1963。
[24] D. M. Mattox, “Particle bombardment effects on thin-film deposition review,” J. Vac. Sci. Technol., vol. A7, pp. 1105, 1989.
[25] 施敏，「半導體元件之物理與技術」，儒林，第425頁，1990。
[26] C. C. Lee, D. T. Wei, J. C. Hsu, and C. H. Shen, “Influence of oxygen on some
oxide films prepared by ion beam sputter deposition,” Thin Solid Films, vol. 290-291, pp. 88-93, 1996.
[27] M. Varasi, C. Misiano, and L. Lasaponara, “Deposition of optical thin films by ion beam sputtering,” Thin Solid Films, vol. 117, pp. 163-172, 1984.
[28] C. C. Lee, J. C. Hsu, D. T. Wei, and J. H. Lin, “Morphology of dual beam
ionsputtered films investigated by atomic force microscopy,” Thin Solid Films,
vol. 308-309, pp. 74-78, 1997.
[29] S. M. Kane, and K. Y. Ahn, “Characteristics of ion-beam-sputtered thin films,”
J. Vac. Sci. Technol., vol. 16, no. 2, pp. 171-174, 1979.
[30] S. B. Krupanidhi, H. Hu, and V. Kumar, “Multi-ion-beam reactive sputter
deposition of ferroelectric Pb(Zr,Ti)O3 thin films,” J. Appl. Phys., vol. 71, no. 1,
pp. 376-388, 1992.
[31] C. C. Lee, J. C. Hsu, and D. H. Wong, “The characteristics of some metallic
oxides prepared in high vacuum by ion beam sputtering,” Appl. Surf. Sci., vol.
171, no. 1-2, pp. 151-156, 2001.
[32] K. Seshan, “Handbook of Thin Film Deposition Process and Technologies,” Noyes Publications, United States, 2th ed, pp. 315-334, 2002.
[33] L. J. V. Pauw, “A method of measuring specific resistivity and Hall effect of discs of arbitrary shape,” Philips Research Reports, vol. 1, pp. 1-9, 1985.
[34] W. Li, Y. Sun, Y. Wang, H. Cai, F. F. Liu, and Q. He, “Effects of
substrate temperature on the properties of facing-target sputtered Al-doped ZnO
films,” Solar Energy Materials and Solar Cells, vol. 91, pp. 659-663, 2007.
[35] H. Lee, “ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode,” Appl. Surf. Sci., vol. 252, pp. 3428-3596, 2006.
[36] Y. Zhang, G. Du, D. Liu, and X. Wang, “Effects of Ag doping on the photoluminescence of ITO films grown on Si substrates,” J. Appl. Phys., vol. 243, pp. 439-462, 2002.
[37] Y. Han, D. Kim, J. S. Chou, and Y. S. Song, “Tin-doped Indium Tin oxide (ITO) film deposition by ion beam sputtering,” Solar Energy Material and Solar Cells, vol. 65, pp. 211-218, 2001.
[38] H. Kim, C. M. Pique, and J. S. Horwitz, “Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices,” American Institute of Physics, vol. 86, pp. 6451-6461, 1999.
[39] H. J. Kim, “Electrical, Optical, and Structure Characteristics of ITO film by Krypton and Oxygen dual ion-beam assisted Evaporation at room Temperature,” Thin Solid Film, vol. 377, pp. 115-121, 2000.
[40] T. Karasawa, and Y. Miyata, “Electrical and Optical properties of Indium Tin oxide thin film deposited on Unheated substrates by DC Reactive Sputtering,” Thin Solid Films, vol. 223, pp. 135-139, 1993.