Cu是目前電子工業中最常用到的金屬基材，對Cu基材的摻雜是改良基材的一個方法，而目前的研究大多都是對Cu基材加入Ni、Be或其他金屬達到銲接中阻礙Cu3Sn生成的效果。對於Cu基材摻雜Fe的研究就相對而言較少，目前瞭解到Cu-2.3Fe-0.12Zn-0.03P(C194)具有較好的可銲性、導電能力強，以及有良好的抗拉強度。故本實驗探討在240、255和270°C下無鉛銲料與基材C194之間的界面反應。實驗方法採用與C194片材重量比為1:3的Sn，Sn-3.0Ag-0.5Cu (SAC) (in wt.%)，將無鉛銲料皆裁切成顆粒狀，真空封管後於240、255、270°C的烘箱內進行液體/固體界面反應，反應時間0.5 小時至8小時，再淬火與熱鑲處理樣品，研磨拋光後利用掃描式電子顯微鏡並搭配能量分散光譜儀深入探討。
結果表明，在240°C 時，Sn/C194界面處僅形成了(Cu,Fe)6Sn5單一相，而在255與270°C 時形成了(Cu,Fe)6Sn5和(Cu,Fe)3Sn相；SAC/C194界面反應時，240與255°C時界面處僅形成了(Cu,Fe)6Sn5單一相，當反應溫度提升到270°C 時，有同時出現(Cu,Fe)6Sn5和(Cu,Fe)3Sn相。液/固反應中Sn/C194和SAC/C194的介金屬相會隨著反應溫度和時間的增加， (Cu,Fe)6Sn5不會在界面處積聚形成層狀，Fe的添加為銲料提供異質成核點而是形成小島狀散佈到銲料中。
Sn/C194系統中，反應時間為0.5小時至1.5小時間，IMC的擴散由擴散控制，IMC生成之活化能為21.2kJ/mol，但反應時間在2小時至8小時間，IMC的擴散由反應控制；而SAC/C194系統中，反應時間為0.5小時至1小時間，IMC的擴散由擴散控制，IMC生成之活化能為53.3kJ/mol，但反應時間在1.5小時至8小時間，IMC的擴散由反應控制。造成的原因IMC發生大量散佈到銲料中的情況，為了維持界面穩定的狀態，新的IMC在生成後可以立即散佈到銲料中，所以，IMC的生成速率已完全由反應生成的速率所決定。

Cu is the most common metal used in the electronic industry. Doping other element in the substrate is a method to improve the substrate. But for the recent research, adding Ni or Be in Cu substrate to suppress the generation of Cu3Sn in soldering is more commonly seen. However, there are less researches about doping Fe in Cu substrate. For now, people has known that Cu-2.3Fe-0.12Zn-0.03P(in wt.%)(C194) has better solderability, stronger conductivity and good tensile strength. There are few further research about C194, so this experiment will bring about the interfacial reaction between lead-free solder and C194 substrate at 240, 255 and 270°C. For experiment procedure, the weight ratio of C194 sheet to Sn or Sn-3.0Ag-0.5Cu (SAC) (in wt.%) being 1:3 are prepared. The lead-free solder will seal into the vacuum with C194 sheet. Having the interfacial reaction for 0.5 to 8 h with liquid/solid reaction in the oven at 240, 255 and 270°C. The samples will be quenched and hot mounted after reaction. Discussing the IMC results after grinding and polishing.
It shows that at the Sn/C194 interface, (Cu,Fe)6Sn5 single phase will form at 240°C, and when the reaction temperature raisde to 255 and 270°C, (Cu,Fe)6Sn5 phase and (Cu,Fe)3Sn phase will form. In the interfacial reactions of SAC/C194, when there are 240 and 255°C, (Cu,Fe)6Sn5 single phase will form at the interface, and when it is 270°C, (Cu,Fe)6Sn5 phase and (Cu,Fe)3Sn phase will form at the same time. In the liquid/solid reaction, the amount intermetallic compound of Sn/C194 and SAC/C194 will be increased with the temperature and time increasing. Adding Fe in the Cu substrate brings the heterogeneous nucleation points to the solder. So that (Cu,Fe)6Sn5 phase will not accumulate at the interface to form layered structure but the small islands spalling into solder.
In the system of Sn/C194, when it is 0.5-1.5h, the mechanism of IMC diffusion is controlled by diffusion and the activation energy of IMC formation is 21.2kJ/mol, but when it is 2-8h, the mechanism of IMC diffusion will control by the reaction. In the system of SAC/C194, when it is 0.5-1h, the mechanism of IMC diffusion is controlled by diffusion and the activation energy of IMC formation is 53.3kJ/mol, but when it is 1.5-8h, the mechanism of IMC diffusion will control by the reaction. The reason of diffusion mechanism changing is that large amount of IMC are spalling into solder. For maintaining a stable interface, the new forming IMC will spalling into solder immediately as it generate. Thus, the generation rate of IMC is totally determined by the reaction rate.

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