本研究以類石墨型氮化碳(Graphitic carbon nitride, g-C3N4)薄膜為基礎，應用於電阻式記憶體(Resistive Random Access Memory, RRAM)之介電層，製備出Cu/g-C3N4/ITO結構之元件。
經由電性量測可表現出雙極式電阻之切換特性，且可穩定循環掃描達1000次，RHRS/RLRS約1.6倍。分析其傳導機制，可發現LRS屬於Ohmic conduction，HRS在低電壓部分屬於Ohmic conduction，而高電壓部分屬於Schottky emission傳導。
後續以PMMA旋塗在有無摻雜氧化亞銅(Copper(I) oxide, Cu2O)之介電層上，形成Cu/PMMA/g-C3N4/ITO和Cu/PMMA/g-C3N4+Cu2O/ITO結構之元件，Cu/PMMA/g-C3N4/ITO經過22次循環掃描，RHRS/RLRS約20倍，分析其傳導機制，LRS屬於Ohmic conduction，HRS在低電壓部分屬於Ohmic conduction，而高電壓部分屬於Schottky emission傳導；而Cu/PMMA/g-C3N4+Cu2O/ITO經過27次循環掃描，表現出良好的RHRS/RLRS比高達103倍，分析其傳導機制，LRS屬於Ohmic conduction，HRS則屬於空間電荷限制傳導(SCLC)機制。

This study is based on Graphitic Carbon Nitride (g-C3N4) film, applied to the dielectric layer of Resistive Random Access Memory (RRAM), and Indium tin oxide (ITO) glass is used as the substrate to prepare Cu/g-C3N4/ITO device.
Through electrical measurement, it can show the switching characteristics of bipolar resistance, and can stably cycle scan up to 1000 times, RHRS/RLRS is about 1.6 times. Analyzing its conduction mechanism, it can be found that LRS belongs to Ohmic conduction, HRS belongs to Ohmic conduction in the low voltage part, and the high voltage part belongs to Schottky emission conduction.
Subsequently, spin-coated PMMA on the dielectric layer to prepare Cu/PMMA/ g-C3N4/ITO and Cu/PMMA/g-C3N4+Cu2O/ITO devices, Cu/PMMA/g-C3N4/ITO passes through 22 cycles of scanning, RHRS/RLRS is about 20 times, analysis of its conduction mechanism, LRS belongs to Ohmic conduction, HRS belongs to Ohmic conduction in the low voltage part, and the high voltage part belongs to Schottky emission conduction.Cu/PMMA/g-C3N4+Cu2O/ITO showed a good RHRS/RLRS ratio of 103 times after 27 cycles of scanning, analysis of its conduction mechanism shows that LRS belongs to Ohmic conduction and HRS belongs to space charge limited conduction (SCLC) mechanism.

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