本研究利用有機金屬化學氣相沈積方式，以三甲基鎵(TMGa)及氨氣(NH3)為原料，分別使用鍍上金觸媒的Si(111)、Ge奈米線及ZnO奈米柱為基材來沈積氮化鎵。在鍍上1 nm厚度金觸媒於Si(111)上藉由調整適當的沈積條件可成長出具奈米結構的GaN沈積物。其中反應溫度在800℃時的沈積呈現片狀的奈米結構；550℃則呈現柱狀的奈米結構。又進料Ⅴ/Ⅲ增加至約15000，可成長出較筆直的氮化鎵奈米柱(高度約為300 nm，底部直徑約為100 nm)。在既成的奈米結構物如Ge奈米線上沈積出珍珠串的氮化鎵奈米點結構(直徑約為100~150 nm)。當以原子層磊晶方法於Ge奈米線及ZnO奈米柱上沈積氮化鎵時，沈積形態呈現包覆式的核殼結構。最後在SiO2包覆的ZnO奈米柱上已具方向性的Ar+離子蝕刻奈米柱上部表面後的選擇性CVD沈積實驗，發現過高的反應溫度(850℃)及高濃度的NH3可能會破壞ZnO奈米柱結構，使得選擇性成長在此條件下失效。

Gallium nitride(GaN) nanostructure were grown by metalorganic chemical vapor deposition using trimethylgallium(TMGa) as source material for Ga, and Ge nanowire、ZnO nanorod、Si(111) with 1 nm of Au as substrates. Si(111) coated with 1 nm Au was acted as a substrate. Heating the substrate until its temperature was 800℃ would form a sheet-like nanostructures. In the other hand, heating the substrates until its temperature was 550℃ would form a rod-like nanostructures. Well-aligned GaN nanorod structure were formed by increasing the feed ratio of Ⅴ/Ⅲ to 15000. GaN nanodots were formed on Ge nanowire substrate. Core-shell structure of GaN/ZnO nanorod、GaN/Ge nanowire were formed by atomic layer epitaxy(ALE) technique. The selective growth process of GaN nanorod on ZnO nanorod, which was coated with SiO2 and acted as substrate, was failed due to high temperature(850℃) and high NH3 concentration.

[01] J. Wu and W. Walukiewicz, Superlattices and Microstructures. , 34,63 (2003)
[02] J. V. Smith , Geometrical and Structural Crystallography. (Wiley, New York, 1982), p.449
[03] S. D. Hersee , X. Sun and X. Wang , Nano Letters. 6 , 1808(2006)
[04] S. Iijima, Nature , 354 , 56(1991)
[05] A.M. Morales and C.M. Lieber, Science, 279, 208(1998).
[06] Hiroaki Okamoto, P.R. Subramanian, Linda Kacprzak. Binary alloy phase diagrams. 1990
[07] R. Q. Zhang, Y. Lifshitz , and S. T. Lee, Advanced. Material.,15, 635(2003)
[08] X. Wang, X. Sun, M. Fairchild, and S. D. Hersee, Applied Physics Letters,89 ,233115(2006)
[09] J.Goldberger, R.He, Y.Zhang, A. Lee, H. Yan, H. J. Cjoi,andP.Yang,
Nature, 422,599(2003)
[10] H. M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y. H. Cho,and K. S. Chung. Applied Physics Letters. 81, 2193( 2002)
[11] H. M. Kim, Y. H. Cho, H. Lee, S. Kim, D. Y. Kim, T.W. Kang, and K. S. Chung.Nano Leters.4, 1059( 2004)
[12] H. M. Kim, T. W. Kang, and K. S. Chung, Advanced. Material.15 , 567(2003)
[13] L. W. Tu, C. L. Hsiao, T. W. Chi, I. Lo,and K. Y. Heieh. Applied Physics Letters. 82, 1601(2003).
[14] X. M. Cai, A. B. Djursic, and M. H. Xie. Thin Solid Films.515,984
(2006)
[15] T. Kuykendall, P. J. Pauzauskie, Y.Zhang, J.Goldberger, D. Sirbulu, J. Denlinger, and P. Yang.Nature Materials.3, 524(2004)
[16] T. Kuykendall, P. Pauzauskie, S. Lee, Y. Zhang, J. Goldberger, and P. Yang.Nano Letters.3, 1063(2003)
[17] R. R. Lieten, S. Degroote, K. Cheng, M.Leys, M. Kuijk, and G. Borghs. Applied Physics Letters. 89, 252118(2006)
[18] C. Y. Chang, S. J. Pearton, P. J. Huang, G. C. Chi, H. T. Chen, L. C. Chen. Applied Physics Letters. 253, 3196(2007)
[19] 林繼宏，”以二乙基一氯鎵為鎵源先驅物的氮化鎵原子層磊晶之研究”，國立台灣科技大學95年碩士論文。
[20] 王晨宇，”適合作為原子層磊晶氮化鎵的鎵源先驅物之研究”，國立台灣科技大學94年碩士論文。
[21] A. A. Shklyaev, M. Ichikawa, Physicals Review B. 62, 1540(2000)