矽（n-Si）上製造的退火氧化鉬（MoO3）和矽（p-Si）上製造的石墨碳氮化物（g-C3N4）異質結合光電探測器

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研究生：	Hidayat Hidayat
論文名稱：	矽（n-Si）上製造的退火氧化鉬（MoO3）和矽（p-Si）上製造的石墨碳氮化物（g-C3N4）異質結合光電探測器 Annealed Molybdenum Oxide (MoO3) Fabricated on Silicon (n-Si) and Graphitic Carbon Nitride (g-C3N4) Fabricated on Silicon (p-Si) Heterojunction Photodetectors
指導教授：	周賢鎧 Shyan-Kay Jou
口試委員:	蔡孟霖 Meng-Lin Tsai 黃柏仁 Bohr-Ran Huang
學位類別：	碩士 Master
系所名稱：	工程學院 - 材料科學與工程系 Department of Materials Science and Engineering
論文出版年：	2021
畢業學年度：	109
語文別：	英文
論文頁數：	102
中文關鍵詞：	molybdenum oxide 、graphitic carbon nitride 、heterojunction 、photodetector
外文關鍵詞：	molybdenum oxide, graphitic carbon nitride, heterojunction, photodetector
相關次數：	點閱：331 下載：4
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Molybdenum oxide (MoO3) is an excellent material because of its electrochromic and photochromic properties. Due to its oxidation and water stability, thermal resistance, tunable bandgap in the visible range of the spectrum, high hardness and high thermal conductivity, graphitic carbon nitride (g-C3N4) is a material of excellent potential for optoelectronic applications. In this research, the effect of the annealing temperature on the performance of MoO3/n-Si photodetector is investigated. g-C3N4 also made to know the performance of the g-C3N4/p-Si photodetector before making the MoO3/g-C3N4 heterojunction photodetector. The MoO3 thin films were grown by RF magnetron sputtering, while g-C3N4 was grown by thermal condensation process. The MoO3 films were annealed at 300-500 oC. The MoO3 thin films SEM analysis concludes that the rise of the annealing temperature would change the morphology and increase the films' thickness. The g-C3N4 grown on p-Si indicated continuous films with nanoparticles and the thickness is around 50 nm. The XRD and Raman analysis indicated that the annealing temperature increases induced phase transformations and increased crystalline quality of MoO3 thin films. The XRD analysis from g-C3N4 powder and thin films confirms the typical pattern of g-C3N4. The transmittance of MoO3 thin films increased as the annealing temperature increased. The graph shows that the maximum transmittance wavelength for the MoO3 thin films is around 400-500 nm. The bandgap of MoO3 thin films evaluated to be 2.6 to 3.55 eV. The bandgap of g-C3N4 was evaluated to be 2.55 eV. For the electrical properties of MoO3/n-Si, the highest rectification ratio is at the annealing temperature of 400 oC observed to be ~2000. The photoresponse shows a weak response at negative bias.The highest photoresponse discovered at 400 oC annealing temperature under 467 nm wavelength to be 4707.53 at 0 V. whereas at 0.1 V The highest photoresponse discovered at 450 oC under 467 nm to be 22.20. The majority of the annealing temperatures show good photoresponse under visible light. The high value for responsivity is at 450 oC to be higher than 350 mA/W, with the highest is 876.50 mA/W at 467 nm. The majority of the samples show a high EQE percentage at visible light and eventually decreased as the wavelength of light increased to 632 nm. The rise time of the MoO3/n-Si photodetector is around 2 ms and the fall time is around 3 ms. The MoO3 annealed at 500 oC shows no response time. The results confirm that the annealing temperature affects the performance of the MoO3 thin films. For the electrical properties of the g-C3N4/p-Si, the highest rectification ratio is at ±2 V to be 60.76. The highest photoresponse discovered under 395 nm wavelength to be 55.69 at 0 V. For responsivity, the highest value is 15.54 mA/W at 395 nm. The results show the responsivity is decreased as the wavelength increased. The rise time of the g C3N4/p-Si photodetector is 2.13 ms and the fall time is 6.26 ms. The results confirm that g-C3N4/n-Si heterojunction has good performance.

ABSTRACT............................................................................i
ACKNOWLEDGEMENT...................................................................iii
TABLE OF CONTENTS..................................................................iv
LIST OF FIGURES....................................................................vi
LIST OF TABLES.....................................................................xi
CHAPTER 1 INTRODUCTION..............................................................1
1. Background.....................................................................1
2. Research Objectives............................................................2
CHAPTER II LITERATURE REVIEW........................................................3
1. Semiconductor Basics...........................................................3
2. Semiconductor Devices..........................................................4
3. Heterojunction.................................................................4
4. Molybdenum Oxides..............................................................6
5. Graphitic Carbon Nitride......................................................21
6. MoO3/g-C3N4 Heterojunction....................................................27
7. Photodetector.................................................................29
CHAPTER III EXPERIMENTAL METHOD....................................................32
1. Experimental Flowchart........................................................32
2. Experimental Materials........................................................33
3. Experimental Equipment........................................................33
4. Experimental Procedures.......................................................34
4.1. Sample Preparation..........................................................34
4.2. Deposition of MoO3..........................................................34
4.3. Thermal condensation of g-C3N4..............................................35
4.4. Fabrication of MoO3/n-Si and g-C3N4/p-Si Heterojunction Photodetector
Device.............................................................................36
4.5. Fabrication of MoO3/g-C3N4 Heterojunction Photodetector Device..............37
5. Field Emission Scanning Electron Microscopy (FE-SEM)..........................38
6. X-Ray Diffraction (XRD).......................................................39
7. Raman Spectroscopy............................................................40
8. UV-Vis-NIR Spectroscopy.......................................................41
9. I-V Measurement...............................................................42
10. Photo-response Measurement...................................................42
CHAPTER IV RESULT AND DISCUSSION...................................................43
1. Molybdenum Oxide Films........................................................43
1.1. SEM Images of MoO3 Films....................................................43
1.2. XRD Analysis of MoO3 Films..................................................46
1.3. Raman Measurement of MoO3 Films.............................................50
1.4. Optical Analysis of MoO3 Films..............................................51
1.5. Electrical Properties Analysis of MoO3/n-Si.................................55
2. Graphitic Carbon Nitride Films................................................68
2.1. SEM Images of g-C3N4 Films..................................................68
2.2. XRD Analysis of g-C3N4 Films................................................68
2.3. Optical Analysis of g-C3N4 Films............................................69
2.4. Electrical Properties Analysis of g-C3N4/p-Si...............................71
CHAPTER V CONCLUSION AND FUTURE WORK...............................................76
1. Conclusion....................................................................76
2. Future Work...................................................................77
REFERENCES.........................................................................78
APPENDIX...........................................................................83
                                

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