近年來二維過渡金屬硫屬化合物逐漸成為大家主要的研究重點，它擁有良好的光電特性，如光電導率與載子遷移率等，二碲化鉬屬於二維過渡金屬硫屬化合物，其具有極佳的光響應度以及載子遷移率。本實驗成功
地利用化學氣相傳導法成長高品質之二碲化鉬(MoTe2)層狀晶體，並以機械剝離法將其厚度撕薄至 10 m 以下，透過氧電漿處理改變其半導體特性，經電荷中性點量測後，確認 MoTe2 成功由 n 型半導體材料轉為 p 型半導體材料。並利用掃描式電子顯微鏡，拉曼光譜儀，X 射線光電子能譜儀和 X 射線能量散佈光譜儀對 MoTe2 進行特性分析，確認氧摻入 MoTe2之比例及鍵結結構，我們使用絕緣遮罩定義出電漿處理區域，將一半的MoTe2 進行電漿處理，製作出同質 pn 接面二極體，在-5 V 至+5 V 的偏壓下量測 I-V 特性曲線，並將此二極體應用於半波整流電路，在輸入電壓 10Vp-p，工作頻率 1-1k Hz 內有良好的整流效果。在光學特性量測的方面，我們分別將本質 MoTe2，經氧電漿處理之 MoTe2 和 MoTe2 二極體，進行光電流，光電導率及歸一化光響應度的量測，結果顯示 MoTe2 二極體相較於其他兩種樣品，光電導率及光響應度皆有顯著提升，由於二極體在逆向偏壓下會使空乏區變寬，內建電場增強，進而造成空乏區內光電流上升。此研究為MoTe2 的光電元件，提供了一種低成本，高效率及非危險性的方法。

Molybdenum ditelluride (MoTe2) is an n-type semiconductor with fabulous
electrical and optical properties, such as carrier mobility, photoconductivity, and
photoresponsivity. In this thesis, we used chemical vapor transport (CVT) to
synthesize MoTe2 layered crystals. In order to control the thickness of MoTe2, we
used mechanical exfoliation to make MoTe2 thinner than 10 m. Through the
oxygen plasma treatment, we modified the semiconductor characteristics of MoTe2
from n-type to p-type, and it was confirmed by the charge neutral point
measurement. To make sure that the oxygen plasma was effectively doped into the
MoTe2 flake, we analyzed the MoTe2 properties by Raman spectrometer, scanning
electronic microscope (SEM), energy dispersive X-ray spectroscopy (EDS), and
X-ray photoelectron spectroscopy (XPS). In order to fabricate the MoTe2
homojunction diode, we used glass mask to define the plasma treated area on the
MoTe2 flake, and the MoTe2 flake was treated with oxygen plasma for 30 minutes.
The I-V characteristic of the MoTe2 homojunction diode was measured by applied
voltage ranging within -5 to +5 V, and the result showed that the MoTe2 diode
which treated with 110 W has the best pn characteristics. The MoTe2 diode also
showed outstanding rectifying behavior under 1k Hz applied with 5 V. In the
optical measurement, we fabricated the pn-MoTe2 diode, pristine MoTe2
photodetector, and fully doped MoTe2 photodetector. We measured the
photocurrent, photoconductivity, and photoresponsivity of 3 types of samples. Due
to the photovoltaic effect, the pn-MoTe2 diode exhibited relatively well
performance than two other photodetectors. Overall, this study provides a low-cost,
high-efficiency, and non-hazardous method for MoTe2 optoelectronic components.

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