[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. Y. Katsnelson, I. V. Grigorieva, S. V. Dubonos, A. A. Firsov, " Two-dimensional gas of massless Dirac fermions in graphene," vol. 438,doi:10.1038,(2005)
[2] K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-Dimensional Atomic Crystals,” Proceedings of the National Academy of Sciences of the United States of America, vol. 102, no. 30, pp. 10451-10453, July 2005.
[3] A. K. Geim and K. S. Novoselov, “The Rise of Graphene,” Nat. Mater., vol. 6, no. 3, pp. 183-191, Mar 2007.
[4] S. Z. Butler, S. M. Hollen, L. Cao, Y. Cui, J. A. Gupta, H. R. Gutierrez, T. F. Heinz, S. S. Hong, J. Huang, A. F. Ismach, E. Johnston-Halperin, M. Kuno, V. V. Plashnitsa, R. D. Robinson, R. S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M. G. Spencer, M. Terrones, W. Windl, and J. E. Goldberger, “Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene,” ACS Nano, vol. 7, no. 4, pp. 2898-2926, Apr 2013
[5] Q. H. Wang, K. K. Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides,” Nat. Nanotech., vol. 7, no. 11, pp. 699-712, Nov 2012.
[6] S. Das, R. Gulotty, A. V. Sumant, and A. Roelofs, “All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor,” Nano Lett., vol. 14, no. 5, pp. 2861-2866, May 2014.
[7] B. Radisavljevic, A. Radenovic, J. Brivio, V.Giacometti, and A. Kis, “Single-Layer MoS2 Transistors,” Nat. Nanotech., vol. 6, no. 3, pp. 147-150, Mar 2011.
[8] K. Roy, M. Padmanabhan, S. Goswami, T. P. Sai, G. Ramalingam, S. Raghavan, and A. Ghosh, “Graphene-MoS2 Hybrid Structures for Multifunctional Photoresponsive Memory Devices,” Nat. Nanotech., vol. 6, no. 11, pp. 826-830, Nov 2013.
[9] W. Zhang, C. P. Chuu, J. K. Huang, C. H. Chen, M.L. Tsai, Y. H. Chang, C. T. Liang, Y. Z. Chen, Y. L. Chueh, J. H. He, M. Y. Chou, and L. J. Li, “Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures,” Sci. Rep., vol. 4, p. 3826, Jan 2014.
[10] C. J. Liu, S. Y. Tai, Y. C. Yu, K. D. Chang, S. Wang, F. S. S. Chien, J. Y. Lin, and T. W. Lin, “Facile Synthesis of MoS2/Graphene Nanocomposite with High Catalytic Activity Toward Triiodide Reduction in Dye-Sensitized Solar Cells,” J. Mater. Chem., vol. 22, no. 39, pp. 21057-21064, Aug 2012.
[11] Min, S., Lu, G. Sites for High efficient photocatalytic hydrogen evolution on a limited-layered MoS2 cocatalyst confined on graphene sheets-The role of graphene. J. Phys. Chem. C 116, 25415-25424 (2012).
[12] Xiang, Q., Yu, J., Jaroniec, M. Synergetic effect of MoS2 and graphene as cocatalysts for enhanced photocatalytic H2 production activity of TiO2 nanoparticles. J. Am. Chem. Soc. 134, 6575-6578 (2012).
[13] Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A. Single-layer MoS2 transistors. Nat Nanotechnol. 6, 147-150 (2011).
[14] Radisavljevic, B., Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat Mater. 12, 815-820 (2013).
[15] Liu, H., Neal, A. T., Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 6, 8563-8569 (2012).
[16] Wu, W. et al. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains. Appl. Phys. Lett. 102, 142106 (4 pages) (2013).
[17] 許樹恩和吳泰伯, “X光繞射原理與材料結構分析” ,彩言商業設計社,2004.
[18] B. D. Cullity, S. R. Stock, “Elements of X-ray diffraction,”Prentice Hall, New Jersey (2001)
[19] A. Beiser, “Concepts Of Modern Physics,”McGraw-Hill Education (India) Pvt Limited (2003).
[20] A. A. Tseng, K. Chen, C. D. Chen, and K. J. Ma, “Electron Beam Lithography in Nanoscale Fabrication: Recent Development,”IEEE Trans. Electron. Packag. Manuf., Vol. 26, pp. 141–149, (2003).
[21] A. A. Tseng, “Recent developments in micromilling using focused ion beam technology,”J. Micromech. Microeng., Vol. 14, pp. R15–R34, (2004).
[22] A. A. Tseng, “Recent Developments in Nanofabrication using Focused Ion Beams,”Small, Vol. 1, pp. 924–939, (2005).
[23] F. Braet, R. De Zanger, and E. Wisse, “Drying cells for SEM, AFM and TEM by hexamethyldisilazane: a study on hepatic endothelial cells,”Journal of Microscopy, Vol. 186, pp. 84–87, (1997)
[24] Y. M. Chang, H. Kim, J. H. Lee, and Y. W. Song, “Multilayered graphene efficiently formed by mechanical exfoliation for nonlinear saturable absorbers in fiber mode-locked lasers,”Appl. Phys. Lett., Vol. 91970, pp.211102 (2010).
[25] C. Y. Nam, D. Tham, J. E. Fischer, “Disorder effects in focused-ionbeam-deposited Pt contacts on GaN nanowires,”Nano Lett., Vol. 5, pp. 2029-2033 (2005)
[26] K. K. Kam and B. A. Parkinson, “Detailed Photocurrent Spectroscopy of the Semiconducting Group VIB Transition Metal Dichalcogenides,” J. Phys. Chem., vol. 86, no. 4, pp. 463-467, Feb 1982.
[27] Mak, K. F., Lee, C., Hone, J., Shan, J., Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010)
[28] S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, J. Wu, “Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2”, Nano Lett., Vol.12, No.11, pp.5579-5580, 2012
[29] Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., Baillargeat, D. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 22, 1385-1390 (2012)
[30] Li, H., Zhang, Q., Yap, C. C. R., Tay, B. K., Edwin, T. H. T., Olivier, A., Baillargeat, D. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 22, 1385-1390 (2012)
[31] S. Vishwanath, X. Liu, S. Rouvimov, P. CMende, A. Azcatl, S. McDonnell, R. M. Wallace, R. M. Feenstra, J. K. Furdyna,
D. Jena, H. G. Xing, “Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and grapheme”, 2D Mater. 2, 2015
[32] 蕭名登, “二硫化鉬層狀半導體之表面電子聚集效應與電傳輸特性”2017, 國立台灣科技大學應用科技研究所碩士學位論文
[33] 張郁欣, “二硒化鉬層狀半導體之二維電傳輸特性”2018, 國立台灣科技大學應用科技研究所碩士學位論文
[34] P. Bhattacharya,“Semiconductor Optoelectronic Devices,” Prentice Hall, New Jersey, vol. 8, pp. 346-351, 1997.
[35] M. Razeghi and A. Rogalski, “Semiconductor Ultraviolet Detectors,” J. Appl. Phys., vol. 79, no. 15, pp. 7433-7473, May 1996.
[36] R. S. Chen, H. Y. Chen, C. Y. Lu, K. H. Chen, C. P. Chen, L. C. Chen, and Y. J. Yang, “Ultrahigh Photocurrent Gain in M-Axial GaN Nanowires,” Appl. Phys. Lett., vol. 91, p. 223106, Nov 2007.
[37] S. Yang, S. Tongay, Q. Yue, Y. Li, B. Li, and F. Lu, “High-Performance Few-Layer Mo-Doped ReSe2 Nanosheet Photodetectors,” Sci. Rep., vol. 4, p. 5442, Jun 2014.
[38] P. Hu, Z. Wen, L. Wang, P. Tan, and K. Xiao, “Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors,” ACS Nano, vol. 6, no. 7, pp. 5988-5994, Jun 2012.
[39] X. Zhou, Q. Zhang, L. Gan, H. Li, and T. Zhai, “Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors,” Adv. Funct. Mater., vol. 26, no. 24, pp. 4405-4413, Jun 2016.
[40] F. Liu, H. Shimotani, H. Shang, T. Kanagasekaran, V. Zolyomi, N. Drummond, V. I. Fal’ko, and K. Tanigaki, “High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes,” ACS Nano, vol. 8, no. 1, pp. 752-760, Jan 2014.
[41] J. Zhou, Q. Zeng, D. Lv, L. Sun, L. Niu, W. Fu, F. Liu, Z. Shen, C. Jin, and Z. Liu, “Controlled Synthesis of High-Quality Monolayered α–In2Se3 via Physical Vapor Deposition,” Nano Lett., vol. 15, no. 10, pp. 6400-6405, Sep 2015.
[42] N. Perea-López, A. L. Elias, A. Berkdemir, A. Castro-Beltran, H. R. Gutierrez, S. Feng, R. Lv, T. Hayashi, F. Lopez-Urias, S. Ghosh, B. Muchharla, S. Talapatra, H. Terrones, and M. Terrones, “Photosensor Device Based on Few-Layered WS2 Films,” Adv. Funct. Mater., vol. 23, no. 44, pp. 5511-5517, Nov 2013.
[43] M. Hafeez, L. Gan, H. Li, Y. Ma, and T. Zhai, “Large-Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors,” Adv. Funct. Mater., vol. 26, no. 25, pp. 4551-4560, Jul 2016.
[44] T. J. Octon, V. K. Nagareddy, S. Russo, M. F. Craciun, and C. D. Wright, “Fast High-Responsivity Few-Layer MoTe2 Photodetectors,” Adv. Opt. Mater., vol. 4, no. 11, pp. 1750-1754, Aug 2016.
[45] W. Luo, Y. Cao, P. Hu, K. Cai, Q. Feng, F. Yan, T. Yan, X. Zhang, and K. Wang, “Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes,” Adv. Opt. Mater., vol. 3, no. 10, pp. 1418-1423, Oct 2015.
[46] J. Kim, C. Jin, B. Chen, H. Cai, T. Zhao, P. Lee, S. Kahn, K. Watanabe, T. Taiguchi, S. Tongay, M. F. Crommie, and F. Wang, “Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures,” Sci. Adv., vol. 3, no. 7, p. e1700518, Jul 2017.
[47] S. Ghosh, P. D. Patil, M. Wasala, S. Lei, A. Nolander, P. Sivakumar, R. Vajtai, P. Ajayan, and S. Talapatra, “Fast Photoresponse and High Detectivity in Copper Indium Selenide (Cu/In7Se11) Phototransistors,” 2D Materials, vol. 5, no.1, p. 015001, Mar 2018.
[48] G. Su, V. G. Hadjiev, P. E. Loya, J. Zhang, S. Lei, S. Maharjan, P. Dong, P. M. Ajayan, J. Lou, and H. Peng, “Chemical Vapor Deposition of Thin Crystals of Layered Semiconductor SnS2 for Fast Photodetection Application,” Nano Lett., vol. 15, no. 1, pp. 506-513, Jan 2015.
[49] H. C. Yang, T. Y. Lin, and Y. F. Chen, “Persistent Photoconductivity in InGaN/GaN Multiquantum Wells,” Appl. Phys. Lett., vol. 78, no. 3, pp. 338-340, Jan 2001.
[50] I. Mahboob, T. D. Veal, and C. F. McConville, “Intrinsic Electron Accumulation at Clean InN Surfaces”, Phys Rev Lett., Vol. 92, pp. 036804, 2004
[51] 樊政軒, “二硫化鉬與硒化銦之高頻時間解析光電導研究” 2018, 國立台灣科技大學光電工程研究所碩士學位論文