使用毛細式離子源濺鍍氧化鋅靶，沉積氧化鋅薄膜於晶向(100)矽基板上，隨後於氧與氮氣氛下退火，討論不同退火條件對氧化鋅薄膜特性之影響。
XRD顯示未退火之氧化鋅薄膜無任何繞射峰值，ZnO(002)繞射峰值在800°C時退火後為最強。600°C以上退火時膜面存在拉應力，是由熱應力所造成。薄膜未退火時，PL光譜顯示無任何峰值，於700°C以上退火時，近能隙(Near-band-edge)發光在380 nm，在800°C氧氣氛下退火時，其PL光譜經由線性擬合其缺陷/UV面積比為最低。1000℃退火後缺陷造成的近紅外光極強。晶粒尺寸隨退火溫度提高而變大，粗糙度因而明顯變差，當1000°C退火後，其均方根表面粗糙度約10 nm。
以毛細式離子源濺鍍氧化鋅薄膜，在氧氣氛下800°C退火，薄膜有較佳的結晶品質，薄膜當中的鋅與氧的鍵結率最高，缺陷發光最少，成份比佳，其均方根表面粗造度(Root mean square surface roughness)在5 nm以下。

ZnO thin films were deposited on (100) silicon substrates by capillaritron ion beam sputtering deposition. ZnO thin films were annealed in oxygen, nitrogen and in atmospheric condition at various temperatures. Effects of annealing on the properties of ZnO thin films are presented.
Annealing at 600°C causes residual tensile stress, which is caused by thermal stress. XRD results show that the as-deposited film has no preferential crystallographic orientations, while annealing at 800°C gives the strongest (002) diffraction peak. The as-deposited ZnO film does not show any PL emission. After annealing at 700˚C and higher, near-band-edge emission near 380 nm becomes discernable.
Annealing at 800°C in oxygen gives the lowest defect related deep level emission. As annealing temperature reaches 900°C and higher, NIR emission increases as annealing temperature increases, indicating the decomposition of ZnO. Grain size also increases as annealing temperature increases. However, as annealing temperature is higher than 1000˚C, surface roughness increases significantly.
ZnO thin films were prepared by capillaritron ion beam sputtering deposition. Post-growth annealing at 800°C in oxygen gives the highest percentage of oxygen incorporated into fully oxidized stoichiometric ZnO matrixes, lowest defect related deep level emission, and better crystalline quality, while an root mean square surface roughness less than 5 nm is achieved.

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