本文利用原子力顯微鏡之奈米氧化術，直接在單晶矽表面上產生局部陽極氧化(Tip-Induced Local Anodic Oxidation)，並以導電探針施加偏壓的方式來進行奈米氧化線及奈米仿圓形圖案加工，並觀察其氧化物的成長情形。
在奈米氧化線方面，控制參數為探針移動速率、電壓形式、相對濕度率，另一方面在奈米仿圓形圖案方面，控制參數為電壓、邊數、重複次數。實驗後發現隨著電壓的增加，氧化線成長的高度也會隨之增加，且成正比關係，但在移動速率愈快時氧化物之高度反而越低且線寬越窄。

Using Atomic Force Microscopy Lithography (AFM Lithography) tip-induced local anodic oxidation on the native SiO2 layer of Si is performed to fabricate oxide patterns. The AFM tip applied with a positive bias can produce the oxide patterns in nano-scale.
In nano-oxidation line, We can control the height by means of various tip moving rate, voltage and relative humidity to understand the growth rate of anodic oxidation. Another in nano-oxdation of circle like that adjust the height by means of various voltage, sides and repeat frequency. From the experiment result, we find that the oxide height increase while voltage increase. But the height of oxide will decrease and the width of oxide become narrow while tip moving rate is increase.

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