本研究建構一套化學機械平坦化(Chemical Mechanical Planarization, CMP)之流場可視化(Flow Visualization, FV)與溫度場可視化(Temperature Visualization, TV)設置，透過改變製程參數來觀察CMP製程中的流場表現與晶圓溫度分布。在流場可視化中，使用紫外光誘導螢光的方法(UV-excitation fluorescence method, UVEF)，將螢光溶液代替拋光液觀察拋光液之弓形波形成及晶圓內的分布情形。而溫度場可視化使用量子點製成的溫度感測塗料(Temperature Sensitive Paint, TSP)，以旋轉塗佈機塗佈於晶圓背面，再利用TSP對溫度的敏感性量測晶圓的溫度分布及變化。研究中改變拋光墊轉速、晶圓轉速、注入方法等製程參數，並探討性能指標的變化。從流場可視化實驗之結果可以發現，弓形波大致從晶圓影像中左下半部，也就是晶圓前緣(Leading edge)開始形成。增加拋光墊轉速及晶圓旋轉對流場的均勻性對於拋光液濃度均勻性均有明顯的提升，但平均螢光強度則會變小。不同注入方法後對於弓形波的形成或是晶圓內的散佈情形皆有明顯影響，其中單管35 mm無論是平均光強度或拋光液濃度均勻性，均有較佳表現。從溫度場量測的結果可以得知，在熱水實驗中，晶圓被熱水加熱的區域有從晶圓前緣延伸至後緣(Trailing edge)的趨勢，與弓形波觀測結果相當。晶圓轉速與拋光墊轉速增加皆會增加溫度分布的均勻性，並且發現單管35 mm在平均溫度以及溫度分布均勻性表現皆較佳，與流場可視化的結果相符。在C8902實驗可以發現，單管35 mm在材料去除率(Material Removal Rate, MRR)的表現以及晶圓內不均勻性(Within-Wafer Non-Uniformity, WIWNU)皆為最佳，且溫度與MRR呈正相關。使用單管35 mm並且在高晶圓轉速以及拋光墊轉速則有最佳的MRR以及WIWNU。

In this study, an experimental setup of flow visualization (FV) and temperature visualization in Chemical Mechanical Planarization (CMP) was constructed. The performance of slurry flow and temperature distribution were observed by changing the process parameters. In flow visualization, UV-excitation fluorescence method (UVEF) is used to investigate the bow wave and the distribution of slurry flow within the wafer by replacing the polishing solution with the fluorescent solution. In temperature visualization, Temperature Sensitive Paint (TSP) made of quantum dots is coated on the back of the wafer by spin coating to investigate temperature rise and distribution on the wafer. In this study, process parameters including changing the pad rotation speed, wafer rotation speed, slurry injection system, etc. were varied and the influences to performance indices are investigated. The results of flow visualization show that the bow wave was generated from the leading edge, which is the lower left half of the wafer. Increasing the rotation speed of the polishing pad and wafer both have a significant improvement to the uniformity of the flow field, yet the average fluorescence intensity decreases. Different slurry injection methods have significant influences to both the formation of the bow wave and the slurry distribution at the wafer. Both the average fluorescence intensity and the uniformity of the single-tube 35 mm case had better results. The results of temperature visualization show that in the hot water experiment, the region heated by hot water on the wafer extends from the leading edge to the trailing edge. This finding agrees with the FV results of the bow wave. Increasing the rotation speed of the polishing pad and wafer significantly improve the uniformity of temperature distribution, and both the temperature rise and the uniformity of for the single-tube 35 mm case were better in the overall results. These results are consistent with the flow visualization results. The C8902 slurry experiment results show that the performance in Material Removal Rate (MRR) and Within-Wafer Non-Uniformity (WIWNU) of the single-tube 35 mm case is better than the other slurry injection methods, and temperature rise is positively correlated with the value of MRR. Using single-tube 35 mm slurry injection at high wafer and pad rotation speed yields the best MRR and WIWNU performances.

參考文獻
[1] 鐘. 楊子明, 沈志彥, 李美儀, 吳鴻佑, 詹家瑋, 半導體製程設備技術, 2 版
ed. 2017.
[2] H. Lee, D. Lee, and H. Jeong, "Mechanical aspects of the chemical
mechanical polishing process: A review," International Journal of Precision
Engineering and Manufacturing, vol. 17, no. 4, pp. 525-536, 2016, doi:
10.1007/s12541-016-0066-0.
[3] D. Zhao and X. Lu, "Chemical mechanical polishing: Theory and experiment,"
Friction, vol. 1, no. 4, pp. 306-326, 2013, doi: 10.1007/s40544-013-0035-x.
[4] H. Xiao, Introduction to semiconductor manufacturing technology, Second
edition ed. 2012.
[5] B. Shin, D. Lee, E. Park, and H. Jeong, "Effect of slurry temperature on
removal characteristics in cadmium telluride CMP," in Proceedings of
International Conference on Planarization/CMP Technology 2014, 2014:
IEEE, pp. 300-301.
[6] D. Kwon, H. Kim, and H. Jeong, "Heat and its effects to chemical mechanical
polishing," Journal of Materials Processing Technology, vol. 178, no. 1-3, pp.
82-87, 2006, doi: 10.1016/j.jmatprotec.2005.11.025.
[7] H. Lee, Y. Guo, and H. Jeong, "Temperature distribution in polishing pad
during CMP process: Effect of retaining ring," International Journal of
Precision Engineering and Manufacturing, vol. 13, no. 1, pp. 25-31, 2012,
doi: 10.1007/s12541-012-0004-8.
[8] C. Lee, J. Park, M. Kinoshita, and H. Jeong, "Analysis of pressure distribution
and verification of pressure signal by changes load and velocity in chemical
mechanical polishing," International Journal of Precision Engineering and
Manufacturing, vol. 16, no. 6, pp. 1061-1066, 2015, doi: 10.1007/s12541-015-
0137-7.
[9] Y. Guo, H. Lee, Y. Lee, and H. Jeong, "Effect of pad groove geometry on
material removal characteristics in chemical mechanical polishing,"
International Journal of Precision Engineering and Manufacturing, vol. 13,
no. 2, pp. 303-306, 2012, doi: 10.1007/s12541-012-0038-y.
[10] S. Hong, S. Bae, S. Choi, P. Liu, H. Kim, and T. Kim, "A numerical study on
slurry flow with CMP pad grooves," Microelectronic Engineering, vol. 234,
2020, doi: 10.1016/j.mee.2020.111437.
[11] M.-N. Fu and F.-C. Chou, "Flow simulation for chemical mechanical
planarization," Japanese journal of applied physics, vol. 38, no. 8R, p. 4709,
1999.
[12] D. Lee, H. Lee, and H. Jeong, "The effects of a spray slurry nozzle on copper
CMP for reduction in slurry consumption," Journal of Mechanical Science
and Technology, vol. 29, no. 12, pp. 5057-5062, 2015, doi: 10.1007/s12206-
015-1101-2.
[13] M. Bahr, Y. Sampurno, R. Han, and A. Philipossian, "Slurry Injection
Schemes on the Extent of Slurry Mixing and Availability during Chemical
Mechanical Planarization," Micromachines, vol. 8, no. 6, 2017, doi:
10.3390/mi8060170.
[14] M. Bahr, Y. Sampurno, R. Han, M. Skillman, L. Borucki, and A. Philipossian,
"Effect of Slurry Injection System Position on Removal Rate for Shallow
Trench Isolation Chemical Mechanical Planarization Using a Cerium Dioxide
Slurry," ECS Journal of Solid State Science and Technology, vol. 6, no. 7, pp.
P455-P461, 2017, doi: 10.1149/2.0321707jss.
[15] T. Fujita and J. Watanabe, "Slurry Supply Mechanism Utilizing Capillary
Effect in Chemical Mechanical Planarization," ECS Journal of Solid State
Science and Technology, vol. 8, no. 5, pp. P3069-P3074, 2019, doi:
10.1149/2.0111905jss.
[16] H. Jo, D. S. Lee, S. H. Jeong, H. S. Lee, and H. D. Jeong, "Hybrid CMP Slurry
Supply System Using Ionization and Atomization," Applied Sciences, vol. 11,
no. 5, 2021, doi: 10.3390/app11052217.
[17] L. V. Bengochea, Y. Sampurno, C. Stuffle, R. Han, C. Rogers, and A.
Philipossian, "Visualizing Slurry Flow in Chemical Mechanical Planarization
via High-Speed Videography," ECS Journal of Solid State Science and
Technology, vol. 7, no. 3, pp. P118-P124, 2018, doi: 10.1149/2.0191803jss.
[18] 陳逸翔, "以流場可視化方法探討化學機械研磨製程中研磨液流動行為與
濃度分佈," 碩士, 機械工程系, 國立台灣科技大學, 台北市, 2019.
[19] 王子軒, "探討化學機械拋光製程中機台參數對拋光液濃度分佈之影響,"
碩士, 機械工程系, 國立台灣科技大學, 台北市, 2020.
[20] C. Wu et al., "Pad Surface Thermal Management during Copper Chemical
Mechanical Planarization," ECS Journal of Solid State Science and
Technology, vol. 4, no. 7, pp. P206-P212, 2015, doi: 10.1149/2.0101507jss.
[21] Y. A. Sampurno, L. Borucki, Y. Zhuang, D. Boning, and A. Philipossian, "A
Method for Direct Measurement of Substrate Temperature during Copper
CMP," Journal of The Electrochemical Society, vol. 152, no. 7, 2005, doi:
10.1149/1.1925070.
[22] T. Suratwala, M. D. Feit, W. A. Steele, L. L. Wong, and G. Pharr, "Influence
of Temperature and Material Deposit on Material Removal Uniformity during
Optical Pad Polishing," Journal of the American Ceramic Society, vol. 97, no.
6, pp. 1720-1727, 2014, doi: 10.1111/jace.12969.
[23] M. Yuh, S. Jang, I. Park, and H. Jeong, "Wafer size effect on material removal
rate in copper CMP process," Journal of Mechanical Science and Technology,
vol. 31, no. 6, pp. 2961-2964, 2017, doi: 10.1007/s12206-017-0539-9.
[24] Y. Park, Y. Lee, H. Lee, and H. Jeong, "Effect of heat according to wafer size
on the removal rate and profile in CMP process," Electronic Materials Letters,
vol. 9, no. 6, pp. 755-758, 2013, doi: 10.1007/s13391-013-6003-9.
[25] T. Liu, J. P. Sullivan, K. Asai, C. Klein, and Y. Egami, Pressure and
temperature sensitive paints. Springer, 2005.
[26] M. D. Chambers, P. A. Rousseve, and D. R. Clarke, "Luminescence
thermometry for environmental barrier coating materials," Surface and
Coatings Technology, vol. 203, no. 5-7, pp. 461-465, 2008, doi:
10.1016/j.surfcoat.2008.07.028.
[27] T. Cai, D. Peng, Y. Z. Liu, X. F. Zhao, and K. C. Kim, "A novel lifetimebased phosphor thermography using three-gate scheme and a low frame-rate
camera," Experimental Thermal and Fluid Science, vol. 80, pp. 53-60, 2017,
doi: 10.1016/j.expthermflusci.2016.08.017.
[28] 陳鋒儒, "以實驗方法探討微流道交錯式薄膜氣泡腔體誘導聲流之流場與
熱傳增益," 2017.
[29] M. Alfaro, G. Paez, and M. Strojnik, "Calibration and evaluation of EuTTA
fluorescence as active medium for IR-to-visible conversion," in Infrared
Spaceborne Remote Sensing and Instrumentation XVI, 2008, vol. 7082: SPIE,
pp. 208-217.
[30] C.-Y. Huang, C.-A. Li, H.-Y. Wang, and T.-M. Liou, "The application of
temperature-sensitive paints for surface and fluid temperature measurements
in both thermal developing and fully developed regions of a microchannel,"
Journal of Micromechanics and Microengineering, vol. 23, no. 3, 2013, doi:
10.1088/0960-1317/23/3/037001.
[31] G. W. Walker, V. C. Sundar, C. M. Rudzinski, A. W. Wun, M. G. Bawendi,
and D. G. Nocera, "Quantum-dot optical temperature probes," Applied Physics
Letters, vol. 83, no. 17, pp. 3555-3557, 2003, doi: 10.1063/1.1620686.
[32] 葉子毓, "以溫度可視化方法探討化學機械拋光製程中晶圓溫度分布," 碩
士, 機械工程系, 國立台灣科技大學, 台北市, 2021.
[33] 林昱銘, "電致動力輔助化學機械平坦化加工之雙向交錯式電極開發應用
於矽導微孔晶," 碩士, 機械工程系, 國立台灣科技大學, 台北市, 2018.
[34] 吳尚諭, "溫度感測循跡微粒應用於微尺度流動之溫度場資料後處理_定
稿," 碩士, 機械工程系, 國立台灣科技大學, 台北市, 2021.
[35] 謝嘉民、賴一凡、林永昌、枋志堯. 光激發螢光量測的原理、架構及應
用. 科儀新知.
[36] 王健宇, "利用螢光壓力感測技術之影像處理與溫度修正量測機翼於低速
風洞中之表面壓力分布," 碩士, 動力機械工程系, 國立清華大學, 新竹市,
2019.
[37] 楊誌欽, 半導體量測理論與實務. 台灣台中市: 張麗紅, 2013.