研究生: |
蕭憲明 Hsien-Ming Hsiao |
---|---|
論文名稱: |
金-銅-錫三元合金、銀-金-銅-錫四元合金系統相平衡及錫-銅合金與金基材的界面反應 The Phase Equilibria of the Au-Cu-Sn Ternary System, the Ag-Au-Cu-Sn Quaternary System, and the Interfacial Reaction between Sn-Cu Alloys and the Au Substrate |
指導教授: |
李嘉平
Chia-Pyng Lee 顏怡文 Yee-wen Yen |
口試委員: |
陳志銘
none 高振宏 none 薛人愷 none |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 111 |
中文關鍵詞: | 擴散阻障層 、拋物線定律 、介金屬相 、反應偶 、無鉛銲料 |
外文關鍵詞: | reaction couple, lead-free solder, diffusion barrier, intermetallics layer, parabolic law |
相關次數: | 點閱:405 下載:15 |
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銀-銅-錫三元合金以及銅-錫二元合金是市面上熱門的無鉛銲料,而金常用於PCB中的電鍍材料及基層材料,也是覆晶(flip chip)製程中主要的凸塊下金屬化(under bump metallurgy)的金屬層材料。本研究主要著重在探討金-銅-錫三元系統以及銀-金-銅-錫四元系統在200℃下的相平衡,以及數種銅-錫合金與金基材的界面反應。
在金-銅-錫三元系統相平衡的部分,本實驗確定了200℃下富錫(錫>50at.%)以上區域的相分佈。並且經過結果分析後發現AuSn與Cu6Sn5會形成一個單相區。此外,本實驗配製的合金樣品可以至少發現有二個三元化合物的存在:C-Au34Cu33Sn31以及B-Au29Cu50Sn21。
銀-金-銅-錫四元系統的相平衡並沒有發現有四元化合物的存在,而銀-錫、金-錫以及銅-錫所形成的二元介金屬化合物分別對於金、銅或銀皆有很大的溶解度,因為銀、金和銅皆為FCC的結構。
數種銅-錫合金(Sn, Sn-0.3wt.%Cu, Sn-0.5wt.%Cu, Sn-0.7wt.%Cu, Sn-1.0wt.%Cu)與金基材的界面反應在200℃、180℃以及150℃於特定的反應時間下,皆會生成AuSn, AuSn2與AuSn4三個介金屬相,而所生成的介金屬相總厚度隨反應時間增加與溫度增加而變厚,符合拋物線定律。隨著合金中銅濃度的增加,介金屬生成的厚度會隨著變薄,介金屬成長的趨勢越平緩。錫-0.7wt.%銅/金的系統可以得到最低的活化能,推測應該是該合金為共晶組成所造成。含銅的合金於界面反應時,介金屬的型態會隨反應時間增加以及合金中銅濃度增加而有變化,原先生成的AuSn4相會逐漸消失,漸漸被(Au,Cu)Sn與(Cu,Au)6Sn5相取代。(Cu,Au)6Sn5有當擴散阻障層的功能,可以抑制介金屬的繼續成長以及阻止金、錫元素的擴散。
Sn-Ag-Cu ternary and Sn-Cu binary alloys are the commercial Pb-free solders and widely used in electronic industries. The Au is commonly used in flip-chip technology, tape automated bonding as under bump metallurgy and substrate materials in printed circuit boards. In this study, the phase equilubria of the Sn-Cu-Au ternary, Sn-Ag-Cu-Au quaternary system, and interfacial reactions between Sn-Cu alloys and Au were experimentally investigated at specific temperatures. The experimental results indicate that there exists a complete solid solubility between AuSn and Cu6Sn5 at 200℃. At least two ternary intermetallic compounds having the homogeneity ranges Au35Cu45Sn20-Au20Cu60Sn20, and Au34Cu33Sn33-Au32Cu35Sn33, are found at 200℃.
The several Sn-Cu/Au reaction couples were prepared and reacted at 150, 180, 200℃ for various lengths of time. Three intermetallic compounds, AuSn, AuSn2, AuSn4 are found in all couples, and (Au,Cu)Sn/(CuxAu1-x)6Sn5 is found in all Sn-Cu/Au couples except the Sn/Au couple. The thicknesses of these reaction layers increases with higher temperature and longer reaction time, and the growth mechanism can be described by using the parabolic law. The Sn-0.7 wt%Cu/Au couple has the lowest activation energies. This result is probably due to the eutectic composition of the Sn-Cu alloy is Sn-0.7wt%Cu. In addition, with increasing reaction time, the intermetallic compound AuSn4 disappears gradually, and turns into (Au,Cu)Sn and (CuxAu1-x)6Sn5. Experimental results also indicate that added more Cu in the solders reduces the total IMCs’ thicknesses and thicker (CuxAu1-x)6Sn5 layer is observed. It seems that (CuxAu1-x)6Sn5 is the diffusion barrier in Sn-Cu/Au reaction coupled system.
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