本研究聚焦以 α-氮化碳 (Alpha carbon nitride, α-C3N4) 作為介電層，應用於雙極電阻式記憶體 (Bipolar Resistive Random Access Memory, Bipolar RRAM) 之上，形成 TaN / α-C3N4 / Al 元件之 M / I / M 結構，同時也在此基礎上製作了摻雜氮化銅 (Copper (I) nitride, Cu3N) 到 α-C3N4 之中，形成 Cu3N-α-C3N4 薄膜作為元件之介電層，並探討兩種元件之 RHRS / RLRS 比值以及電性掃描特性。
純材料之 α-C3N4 介電層製備的 TaN / α-C3N4 / Al 元件之電極寬度尺寸分為 100 µm、150 µm、200 µm 以及 250 µm，TaN / α-C3N4 / Al 元件之 RHRS / RLRS 分別為 12.2、6.1、4.6、7.1 倍，其導電機構在 LRS 時為歐姆傳導機構 (Ohmic conduction)，在 HRS 低電壓段的導電機構為歐姆傳導機構 (Ohmic conduction)，HRS 高電壓段的導電機構屬於蕭特基發射機構 (Schottky emission)。此外，TaN / α-C3N4 / Al 元件之電阻切換機構為「氮空缺燈絲機構 (Nitrogen vacancy conductive filament)」。
摻雜 Cu3N 之 Cu3N-α-C3N4 介電層製備的 Al / Cu3N-α-C3N4 / ITO 元件之 RHRS / RLRS 為 2.7 倍，其導電機構在 LRS 時為歐姆傳導機構 (Ohmic conduction)，在 HRS 低電壓段的導電機構為歐姆傳導機構 (Ohmic conduction)，HRS 高電壓段的導電機構屬於蕭特基發射機構 (Schottky emission)。此外，Al / Cu3N-α-C3N4 / ITO 元件之電阻切換機構為「氮空缺燈絲機構 (Nitrogen vacancy conductive filament)」。

This research focuses on the use of α-carbon nitride (α-C3N4) as dielectric layer on Bipolar Resistive Random Access Memory (Bipolar RRAM) to form TaN / α-C3N4 / Al device as M / I / M structure. Further, copper nitride (Copper (I) nitride, Cu3N) was doped into α-C3N4 to form Cu3N-α-C3N4 thin film as the device dielectric layer. The RHRS / RLRS ratios and electrical scanning characteristics of two device were compared.
The electrode widths of the TaN / α-C3N4 / Al devices made of pure α-C3N4 dielectric layer are 100 µm, 150 µm, 200 µm and 250 µm, and the RHRS / RLRS ratio of corresponding TaN / α-C3N4 / Al device are 12.2, 6.1, 4.6, and 7.1 times, respectively. Their conduction mechanism is ohmic conduction mechanism in LRS, the conduction mechanism in the HRS low-voltage part is ohmic conduction, and the conduction mechanism in the HRS high-voltage part belongs to Schottky emission. In addition, the resistance switching mechanism of TaN / α-C3N4 / Al device is " Nitrogen vacancy conductive filament".
The RHRS / RLRS ratio of Al / Cu3N-α-C3N4 / ITO device prepared from the Cu3N-α-C3N4 dielectric layer is 2.7, and its conduction mechanism is ohmic conduction mechanism at LRS, the conduction mechanism in the HRS low-voltage part is ohmic conduction, and the conduction mechanism in the HRS high-voltage part belongs to Schottky emission. In addition, the resistance switching mechanism of Al / α-C3N4 / ITO device is " Nitrogen vacancy conductive filament".

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