Cobalt sulfide (CoSx) compromising CoS2 and Co9S8 was fabricated and used for resistive switching memory. A Co film was firstly deposited by e-beam evaporation. Then the Co surface was sulfurized form a CoSx layer. Then a Ag or Cu film was deposited on top of the CoSx film as the top electrode together with remaining Co film as the bottom electrode to form memory devices.
The structural properties of the CoSx film were characterized using field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The electrical properties were characterized using ultraviolet photoelectron spectroscopy (UPS), UV-Vis spectroscopy and photoluminescence spectroscopy. The devices were cyclically subjected to current-voltage (I-V) measurements using an Agilent B1500A. During the I-V measurements, the top electrode was swept with dc voltage in 20 mV steps while the bottom electrode was grounded.
Both Ag/CoSx/Co and Cu/CoSx/Co cells exhibited bipolar resistive switching behavior. The conduction mechanisms for both Ag/CoSx/Co and Cu/CoSx/Co cells follow Ohmic conduction in low resistance state and Schottky emission in high resistance state. Electrical conduction of both Ag/CoSx/Co and Cu/CoSx/Co cells suggested the presence of a local metallic filamentary path in LRS. Both Ag/CoSx/Co and Cu/CoSx/Co cells also demonstrated multi-level resistive switching.

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