本論文的研究內容可以分成三個階段來探討，第一階段是利用SLS機制直接於矽基材上成長矽奈米線，實驗採用金顆粒作為催化劑，並使用石英管爐通入氫氬混合氣後加熱至850 ℃以上來成長矽奈米線，並改變溫度與持溫時間來控制奈米線長度，成長出的奈米線為氧化矽奈米線，最短可以小於100 nm。
　　第二階段是在第一階段成長出的奈米線試片上添加配製好的PCS溶液，再使用石英管爐進行熱處理成長碳化矽包覆層，並分析探討各種實驗參數如PCS濃度、熱處理條件、通入氣氛對生成物的影響，我們發現通入純氬氣或氫氬混合氣會對生成的奈米線外觀造成極大的差異，生成的分別是碳化矽膜包覆氧化矽奈米線與Si-O-C奈米線。
　　最後則是對製成的樣品進行場發射與PL發光量測。當使用較長且高密度的碳化矽包覆氧化矽奈米線基材，可以得到4.7 V/μm的場發射起始電壓，而同一條件試片在PL量測時會發出波長在520 nm的綠光。

This study is divided into three parts. In the first step we used SLS (Solid-Liquid-Solid) mechanism to grow silicon nanowires directly on Si substrate with gold particles as catalyst. Nanowires could be fabricated while passing mixed argon and hydrogen gases through a quratz tube been heated upon 850 ℃. We produced the nanowires with different lengths by changing the process temperatures and times. The nanowires which we grew up were composed of silica, and the length could be controlled under 100 nm.
In the second part PCS solution was applied to the silica nanowires substrate prepared from step one, and then heated in the quartz tube. It was noticed that many factors, like PCS concentration or heat treatment parameter, would affect the product’s conformation and character. Using pure argon or hydrogen mixed gas as heating atmosphere would make the SiC nanowires different much more with morphologies.
At last we proceeded measurements of nanowires’ optical and field emission properties. It showed that the lowest turn-on field of 4.7 V/μm was observed from SiC thin film coated silica nanowires. This specimen emitted green light at 520 nm by PL, in addition.

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