本研究目的在於設計一陶瓷膜取代LIGA製程中所使用的高分子光阻，實驗初期以薄膜電阻率為首要考量條件，篩選現有的商用陶瓷鍍層，並選用薄膜電阻率最高的氮氧化鈦薄膜與次高的碳氮化鉻薄膜作為取代高分子光阻之陶瓷鍍層。
　　由實用中發現，碳氮化鉻陶瓷薄膜容易受製程中的外力碰撞而損壞，因此後續考量了薄膜的機械性質。氮氧化鈦薄膜受外力碰撞而毀損的程度較小，因此將其薄膜特性，楊氏模數大於42.35 GPa、微硬度大於1.91 GPa、基材接著性小於HF2破裂等級，作為後續陶瓷鍍層所需具備的機械性質標準。
　　經由薄膜電阻率與機械性質的考量，將氮氧化鈦薄膜實際應用於電鑄製程時發現，去光阻液會腐蝕氮氧化鈦薄膜使其絕緣性下降，且薄膜表面會出現許多裂痕，導致金屬結構沉積在陶瓷模具處。透過鹼液浸泡模擬去光阻步驟後發現，碳氮化鉻薄膜在鹼液浸泡72小時候，其薄膜電阻率下降的程度仍相當微小，僅由原先的2.99×10^4 Ω-cm下降至2.07×10^4 Ω-cm，因此將碳氮化鉻薄膜對去光阻液的腐蝕阻抗(5×10^7 Ωcm2)設為後續薄膜耐腐蝕性的判斷標準。
　　綜觀上述結果整理出此應用下陶瓷薄膜所須具備的特性：(Ⅰ)絕緣性-防止電鑄時金屬沉積在模具處、(Ⅱ)機械性質-防止製程中的外力碰撞造成陶瓷薄膜毀損、(Ⅲ)破裂韌性-防止陶瓷薄膜在彎曲時破裂、(Ⅳ)與基材接著性-防止彎曲時陶瓷薄膜與基材剝離、(Ⅴ)耐腐蝕性-防止陶瓷薄膜在蝕刻製程時產生特性變化。
由於上述量測的商用陶瓷薄膜，不易直接透過製程條件的調整以改善薄膜特性。因此本研究後續以工業中常用的硬質薄膜(氮化鈦、氮化鋯、氮化鉻、氮化鋁)為選擇對象，並在特性考量後選用氮化鋯以及氮化鋁作為實驗主軸，最終並預計使用濺鍍方法製備氮化鋁/氮化鋯多層膜，結合氮化鋯的高機械性質與氮化鋁的高絕緣阻抗，以達到上述薄膜特性。在反應式濺鍍中，影響薄膜特性最直接的參數就是反應氣體的多寡，因此本研究預先將反應氣體流量(氮氣)設定為變動參數，分別量測氮化鋁、氮化鋯系統的薄膜特性，並利用薄膜特性判斷後續濺鍍多層膜所需的製程參數。在反應氣體流量確定後，導入純金屬介層(Interlayer)，目的在改善陶瓷薄膜與不鏽鋼金屬間異質接合所產生的不匹配性。
　　本研究利用直流反應式磁控濺鍍製備氮化鋁與氮化鋯薄膜，並改變製程參數(1)固定通入的氬氣流量(10 sccm)，改變氮氣流量(0、2.5、5、7.5、10、12.5 sccm)、(2)固定總濺鍍時間，改變金屬介層(5、10、15、20分鐘)與氮化物薄膜濺鍍時間。分別量測氮化鋯與氮化鋁薄膜的上述特性，並探討不同製程條件對薄膜特性造成的影響。
　　結果顯示，氮化鋯薄膜在氮氣流量為2.5 sccm時，因具有最高的結晶度與較緻密的薄膜結構，使其也具有最高的楊氏模數(241.4 GPa)、微硬度(28 GPa)與破裂韌性(0.731 MPa√m)，而這都遠高於由氮氧化鈦薄膜所訂定的機械性質標準，代表氮化鋯薄膜更不容易因製程中的外力碰撞而毀損。氮化鋁部分則是在氮氣流量為12.5 sccm時具有最高的薄膜電阻率(1.2×10^4 Ω-cm)，這與文獻回顧的10^8 Ω-cm有不小的差距，這是因為本研究僅在室溫的基板溫度下濺鍍氮化鋁薄膜，因為結晶性不佳，使其特性不如文獻回顧般優秀。兩者與304不鏽鋼的接著性均為最佳的HF1等級、腐蝕阻抗部分(Z75S→4.91×10^7 Ωcm2，A50S→2.61×10^7 Ωcm2)也與碳氮化鉻所訂定的判斷標準差異不大，代表氮化鋯與氮化鋁薄膜均不易受去光阻液腐蝕而導致薄膜特性下降。
在加入金屬介層的實驗當中發現，金屬介層的加入大致上均會降低上述的薄膜特性，這應與基材、金屬介層、陶瓷薄膜之間的殘留應力有關。而降低的薄膜特性唯獨在破裂韌性方面不同，鋁介層的加入能提升氮化鋁薄膜的破裂韌性。
從實驗結果中發現，雖然反應氣體(氮氣)的多寡會顯著地影響薄膜特性，但基板溫度對結晶度與殘留應力的影響同樣也是決定薄膜特性的重要參數。

The purpose of this study is to design a ceramic thin film to substitute the polymer resist used in LIGA process. The ceramic thin films must have the following characteristics:
Resistivity – To prevent electroformed metal deposition on the die.
Mechanical properties – To prevent the thin film ceramic from rupturing by the external forces
Fracture toughness – To prevent the thin film ceramic from rupturing in bending step.
Substrate adhesion – To prevent the separation of ceramic thin films and substrate.
Corrosion resistance – To prevent the thin film ceramic from corrosion, during the etching process.
Sputtering technique was used to prepare an aluminum nitride-zirconium nitride multilayer thin film. In order to achieve the thin film characteristics as stated above, we incorporated the high mechanical properties of zirconium nitride and high resistivity of aluminum nitride. The nitrogen flow and metal interlayer thickness are the parameters taken for the experimental study, and confirmation tests are carried out by measuring thin film properties of aluminum nitride and zirconium nitride respectively.
A DC reactive magnetron sputtering is used to prepare an aluminum nitride and zirconium nitride thin film, and changing the experimental parameters:
(1) Keeping the flow rate of argon constant (10 sccm) and varying the flow rate of nitrogen (0, 2.5, 5, 7.5, 10, 12.5sccm)
(2) Keeping the total sputtering time constant and varying the metal interlayer (5, 10, 15, 20 minutes) and nitride films sputtering time.
The results showed that 2.5 sccm nitrogen flow of zirconium nitride thin films has the highest Young's modulus (241.4GPa), micro-hardness (28GPa) and the fracture toughness (0.731 MPa√m). Aluminum nitride showed the highest resistivity (12058 Ω-cm), corrosion resistance (1.29×〖10〗^5 Ωcm2) when the nitrogen flow is at 10sccm. Both of zirconium nitride and aluminum nitride have the best substrate adhesion (HF1) with stainless steel.
In metal interlayer experiments, added metal interlayer will influence the thin film properties. The decrease of the thin film properties is different in fracture toughness. Adding an aluminum interlayer can improve the fracture toughness of aluminum nitride thin films.
From the experimental results, it showed that the amount of reaction gas (nitrogen) will significantly affect the thin film properties, substrate temperature can influence the crystallinity of the thin film and residual stress is also an important parameter to determine thin film characteristics.

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