本論文介紹多階層飛馳電容型圖騰柱功率因數修正器，以3 kW四階層飛馳電容型圖騰柱功率因數修正器搭配200 V氮化鎵功率開關來設計與探討。與傳統二階圖騰柱功率因數修正器相比，四階層飛馳電容型圖騰柱功率因數修正器可以利用低耐壓的氮化鎵開關、減少電感上的電壓應力，並增加電感等效漣波頻率。因此電感體積會比傳統二階圖騰柱功率因數修正器小，且低壓氮化鎵開關體積比高壓氮化鎵開關小上許多，寄生元件特性也比較好，即使開關數量較多，四階層飛馳電容型圖騰柱功率因數修正器仍舊擁有高效率與高功率密度的特性。本文還會分析電路動作原理、控制迴路、數位補償器，並利用多重的參數比較設計平板電感，以尋求在固定條件下的最佳設計點。使用模擬軟體PSIM驗證電路相關設計，最後實現輸出功率3 kW、輸入電壓為交流90到264 Vrms，輸出電壓400 VDC，電感電流等效頻率為210 kHz之功率因數修正器。

This thesis introduces the flying capacitor multilevel (FCML) totem pole bridgeless power-factor-correction (PFC). Design and discuss of 3kW four-level FCML totem pole bridgeless PFC with 200V GaN device. Compared with the conventional two-level totem pole PFC, four-level FCML totem pole bridgeless PFC can utilize the low voltage GaN device, reduces the voltage stress on the inductor and increases the equivalent ripple frequency of the inductor. Therefore, inductor volume will be smaller than conventional two-level totem pole PFC. And low voltage GaN device volume is much smaller than high voltage GaN device, parasitic element characteristics are also better. Even if the number of devices is large, four-level FCML totem pole bridgeless PFC still has the characteris-tics of high efficiency and high power density. This paper will analyze the circuit operation principle, control loop, digital control loop. And utilizes multiple parameters to compare and design planar inductor, to find the best design under fixed conditions. Use simulation software PSIM to verify the design about circuit. Finally implement a PFC with output power of 3 kW, input voltage of 90 to 264Vrms, output voltage of 400V and inductor equivalent frequency of 210kHz.

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