目前主流半導體製程仍採用實體光罩進行黃光微影，但實體光罩有易污染、成本高以及光罩更換與對準曝光等問題。為解決這些問題，本實驗室開發出特殊的無光罩顯微鏡微影系統，其特點為整合了顯微鏡與投影機這兩個不同的光學單元。此系統僅需利用一動態光罩即可產生隨時間連續變化的不同光罩圖樣，不但解決了傳統石英光罩的更換對位問題，更可節省製作3D複雜元件所需的多道光罩之製作成本。不過在解析度方面，本系統目前仍與實體光罩曝光有段差距。
為了提升本系統的微影解析度，本研究使用光學模擬軟體分析此一無光罩顯微鏡微影系統，藉由投影機個別元件的實際光學性質量測以及雙凸顯微鏡的設計，以軟體進行像差分析與系統架構對接之最佳化設計，並據此改良無光罩顯微鏡微影系統。最後，根據模擬建構完成之系統進行解析度的實驗驗證，同時導入偏振之概念來改善微影影像的對比。
實驗結果顯示，經修正之曝光系統其解析度可以由原先的3.76 μm推進至1.76 μm。同時，加入偏振片的微影製程明顯降低光干涉的影響，有效改善線寬的線寬輪廓與線寬間距的比例。

Photolithography is the preferred method of micro-patterning in both electronics manufacturing and micro-electromechanical systems (MEMS). The process normally requires a customized mask, which is expensive, time consuming, and flexibility limited. In order to solve these problems, we have developed a special maskless lithography system (MLS). This system is mainly composed of a microscope and a projector, where the projector projects images into the microscope. The DMD (Digital Micro-mirror Device) of the projector is used to generate the dynamic mask pattern in real-time. In other words, DMD is used to produce different images to be projected directly on the wafer. But unfortunately, this system is still limited in resolution.
In order to enhance resolution, this study introduces optical software to analyze MLS. With the optical measurements of the components in the projector and the design of a biconvex microscope, MLS is optically modeled, and then proceeds with aberration analyses and combination simulation. Based on these analyses, the setup of MLS is altered to obtain a better performance. Meanwhile, the minimum line-width is tested with the optimized MLS. And a linear polarizer is incorporated to the lithography process to improve contrast of the image.
The results of the experiments showed that resolution of the altered MLS can be enhanced from 3.76 μm to 1.76 μm. The results also confirmed that linear polarizer evidently lowers light interference, thus improves the profile of the line-width and maintains the line-width/space scale.

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