本研究設計一套應用圓偏振光原理之光彈應力影像分析系統(Photoelastic Stress by Image Analysis System, PSIAS)，包含兩種光彈應力校正與分析方法，第一種方法為搭配光延遲量補償器(LWC)，研發一套光彈應力補償法(Photoelastic Stress by Image Analysis System with LWC Compensator Method, PSIAS_LWC_md)，可應用於人工檢測不等厚度菱鏡之殘留應力，第二種方法為改進先前發展之光彈應力分析軟體(Photoelastic Stress Analysis Software, PSAS)，可半自動檢測殘留應力。驗證方面先以校正片Psm-1 disk分析比較兩種應力檢測方法，其PSIAS_LWC_md比較於文獻的應力光學係數校正法(Stress-Optical Coefficients Calibration Method, C_md)的應力檢測結果，平均應力誤差小於0.140MPa，相當於4.6%;以PSAS比較於C_md其平均應力誤差為0.312MPa，相當於10.3%。再以射出成形製作壓克力測試片(PMMA disk)，可求得實驗材料之應力光學係數(Stress-Optical Coefficients, C)。另本研究應用射出成形以及含熱退火射出壓縮成形(Injection Compression Molding with Annealing, ICM-ANL)製程比較階梯狀導光菱鏡殘留應力、成形性以及光學品質影響。在比較ICM-ANL於IM 製程，因殘留應力釋放，故以拉曼峰值強度解釋菱鏡在充填方向之凝固層、剪切層與核心層之分子配向情形已經明顯降低，並以PSIAS_LWC_md檢測菱鏡殘留應力可降低24.5%，可得到最小平均平面度為11m，相對為改善74%，而光照度最大提升約4%。最後應用於含次波長結構之複合式菱鏡製作，先以陽極氧化鋁製程製作六吋次波長微米結構(6” Alumina Sub-Wavelength Structure, 6”Al_SWS)，再以電鑄製程翻模為6”Ni_SWS，其孔洞直徑約93nm、平均高度360nm，但因本研究之鎳模仁奈米柱生長並非完全垂直，使得複合式菱鏡之次波長結構不易脫模，容易破壞次波長結構。本研究結果已驗證所研發之光彈應力補償法(PSIAS_LWC_md)及含熱退火射壓成形(ICM-ANL)可應用於導光菱鏡之應力分析與製作，未來可應用於不等厚度複合式光學元件之殘留應力檢測，以提升光學品質。

This study aims to design a Photoelastic Stress Image Analysis System (PSIAS) based on circular polarization theory, which includes two calibration and analysis methods of (I) PSIAS combined with a LWC Compensator Method or named as PSIAS_LWC_md and (II) Photoelastic Stress Analysis Software (PSAS) modified from previous study. Experimental verification has been performed by mechanical force compression on a benchmark Psm-1 disk for comparison of both methods with theoretical optical-stress coefficient method (C_md) from reference. The average stress error by PSIAS_LWC_md is 0.140MPa or 4.6%. Another results of PSAS is lesser than 0.312MPa or 10.3%. Then a PMMA disk by injection molding (IM) is used for estimating the stress-optical coefficients of test materials by PSIAS_LWC_md. Therefore a light-guide prism has been fabricated by IM and injection compression molding with thermal annealing (ICM-ANL) processes to investigate effects of parameters on prism’s residual stress, formability and optical quality. Result of the average residual stress of prism by ICM-ANL process is reduced 24.5% with that of IM process. Similarly, the minimum average non-uniformity (ANU) of prism by ICM-ANL process is 11m or improved 74% and the illumination is promoted as 4% with that of IM process. Verification results of Raman intensity measurement have revealed that the molecular orientation of skin, shear and core layers in filling direction of prisms is much reduced for ICM-ANL process. Final test of hybrid prism with sub-wavelength structure, an Anodic Alumina Oxide (AAO) process is applied to fabricate six inch sub-wavelength structure (6”Al_SWS), and electroforming process is conducted to make 6”Ni_SWS of diameter 93nm and height 360nm. The sub-wavelength structures of hybrid prism are difficult to be demolded because the Ni_SWS of nano-columns are not totally vertically duplicated. Results of this study have been tested and verified for residual stress estimation of light-guide prism with different thickness by PSIAS_LWC_md. Future study can focus on applying the PSIAS_LWC_md and ICM-ANL technique as residual stress estimation on optical elements with different thickness and sub-wavelength structure.

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