本論文材料有三種，分別是Ge-Sn異質結構奈米線， Ge-Sb異質結構奈米線和GeSe2奈米材料，進行生長及元件的製程並探討對應電性表現。
第一部分為Ge-Sn異質結構奈米線，使用AAO並以壓力鑄造法，將焠火過的Ge0.2Sn0.8塊材在700度下加熱融化注入AAO，將成品在400度退火24小時後，以鉻酸溶液蝕刻後獲得Ge-Sn異質結構奈米線。藉由SEM影像觀察與EDS元素分析，奈米線有明暗對比區域進行組份分析後，觀察到接近直徑100 nm無扭曲且長度落在2-3 µm的Ge-Sn異質結構奈米線，進而製作場效電晶體並以鎳作為電極進行量測。根據電性量測結果與能帶圖比較，發現其性質為歐姆接觸，且發現Ge-Sn異質結構奈米線在高電壓的情況下載子遷移率為0.051(cm2/(V*s)。重複的高電壓量測下，容易產生熱能導致焦耳熱效益的產生影響元件的發揮，且異質結構的隨機性很大程度的影響製程元件量測的結果。
第二部分為Ge-Sb異質結構奈米線，以莫耳百分比7:3(銻:鍺)，980度下融煉1小時後焠火形成GeSb塊材。運用AAO配合壓鑄系統將GeSb塊材融化注入AAO中，將其以300度持續24小時的退火程序後使用鉻酸溶液蝕刻外層AAO後獲得Ge-Sb異質結構奈米線。透過SEM觀測可知其長度大約為3-4 µm。將鍍鎳電極的元件進行量測後與能帶圖比較後，得知為p-type 蕭特基接觸性質，由於在Ge0.175Sb0.825有共晶相的情形下分節情形並沒有Ge-Sn好且有隨機性的情況下，所以在量測部分的SEM影像看不出有明顯明暗對比。但在Id-Vg量測中，閘極電壓小的時候可獲得展現不錯的載子遷移率為1.24x10-2 (cm2/(V*s)。
第三部分為GeSe2奈米線及奈米帶，將Ge錠與Se粉末與作為基板鍍金的氧化鋯以真空幫浦抽真空，封入石英管中並放置於加熱爐中成長。改變溫度、前驅物(Ge與Se)克數，成核區 (2-2.5 cm)、過渡區 (3-3.5 cm)、成長區 (4-4.5 cm)基板之不同區域及成長時間等參數進行調整與比較。在0.02克Ge與0.01克Se在450度下成長1.5小時成長區，得到肉眼觀察基板上產物為黃色，筆直較無彎曲的奈米線，厚度為40-50 nm的奈米片並在EDS元素分析下成分為GeSe2。將GeSe2奈米線及奈米帶製備為場效電晶體，分別鍍鎳及鈦鎳電極進行量測。退火後鍍鎳電極(250 nm)的元件，奈米線的電阻率為0.0057 Ω·cm且載子遷移率高達2.37x104 (cm2/(V*s))且未退火的Ti/Ni (20 nm/ 230 nm)電極也展現9.54x10-2 (cm2/(V*s))載子遷移率。由於退火後之元件測量可能導致鎳電極擴散進入GeSe2中影響電性，目前尚需再現性來證明退火後的GeSe2的極高載子遷移率。在SEM的觀察下，退火後的鈦/鎳電極材料會因GeSe2對熱的不穩定性而導致電極端會融化且蓋在電極上的材料也會因受熱而產生變形，鎳電極的元件也有相同熱不穩定的情況。針對熱不穩定的情況，在後續的元件量測中將退火溫度慢慢下降並做量測後發現400度對GeSe2來說非常容易損壞元件且IdVg的量測會有很大的雜訊。將退火溫度下降至350度在Ni電極進行IdVd量測後元件即毀損，表示溫度還是過高導致無法後續量測。在320度時IdVg量測並無明顯的開關比，不過元件不會因為多次量測而直接毀損，在後續的電性量測中320度與330度的退火溫度是對量測較佳的參數。

In this thesis, Ge-Sn heterostructure nanowires, Ge-Sb heterostructure nanowires, and GeSe2 nanomaterials were used to grow and fabricate a series of devices and investigate the electrical properties.
In the first part, Ge-Sn heterostructure nanowires were obtained by using AAO and pressure casting to smelt the quenched GeSn bulk at 700oC, annealing the finished product at 400 oC for 24 hours. Etching the Ge-Sn heterostructure nanowires with chromic acid solution. The SEM analysis could observe the Ge-Sn heterostructure nanowires with a diameter which close to 100 nm without distortion and a length of 2-3 µm, which using nickel as the electrode to fabricate the Field-Effect Transistors. From the electrical measurements and energy band diagrams, it was found that the ohmic contacts and Ge-Sn heterostructure nanowires exhibit carrier transport properties at high voltages with a carrier mobility of 0.051(cm2/(V*s). Due to the repeated high voltage measurements, resulting in Joule heating benefits. It affected the performance of the components, and the random nature of the heterostructure greatly affects the measurement results of the process components.
The second part is the Ge-Sb heterostructure nanowire. The Ge-Sb heterostructure nanowire is formed by melting and tempering the GeSb bulk at 980oC with molecular percentage of 7:3 (antimony:germanium) for 1 hour. Smelting the GeSb bulk into the AAO with the die-casting system, and etching the outer layer of AAO with chromic acid solution for 3.5 hours after annealing at 300oC for 24 hours. The length of the Ge-Sb heterostructure nanowires is about 3-4 µm by SEM, and the p-type Schottky contact properties can be found after measurement and comparison with the energy band diagram. It represented a good carrier mobility of 1.24x10-2 (cm2/(V*s) which can be obtained that the gate voltage is ±5 V in the Id-Vg measurement.
In the third part, GeSe2 nanowires and nanobelts. Ge ingot and Se powder with gold-plated zirconia were used as substrates and sealed into quartz tubes by vacuum pumping and placed in a heating furnace for growth. The nucleation zone (2-2.5 cm), transition zone (3-3.5 cm) and growth zone (4-4.5 cm) were found to compare with temperature, growth time. The GeSe2 nanowires and nanobelts on the substrate were fabricated the Field Effect Transistors and measured with depositing nickel and Ti/Ni as electrodes. The resistivity of GeSe2 nanowires is 0.0057 Ω-cm and the carrier mobility is 2.37x104 (cm2/(V*s)) in the annealed nickel electrodes (250 nm). And the mobility is 9.54x10-2 (cm2/(V*s)) in non-annealed Ti/Ni electrodes (20 nm/ 230 nm). Under the SEM observation, the annealed Ti/Ni electrodes will melt after doing the annealing process. Due to the thermal instability of GeSe2, the material which covered on the electrodes will be deformed due to the heating process, and so did the same condition of Ni electrodes.
In the case of thermal instability, the annealing temperature is slowly lowered in the subsequent device measurement. It is found that 400 oC is easily damaged the device for GeSe2 and the IdVg measurement will have a lot of noise. After the annealing temperature decreased to 350 oC, the device was damaged after IdVd measurement was performed on the Ni electrode, indicating that the temperature was still too high to cause the same condition in order not to implement the continuous electrical measurement. There is no obvious on/off ratio in the IdVg measurement at 320 oC, but it will not be directly damaged due to the repeated measurements. In the subsequent electrical measurements, the annealing temperature of 320 oC and 330 oC is better for the measurement.

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